cf sot-363
Abstract: GaAs FET cfy 14 GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343 cfy 14 121B 801C SCT-595 CFY30 TSSOP-10-2 CFY 18
Text: GaAs Components Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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OT-363
SCT-598
cf sot-363
GaAs FET cfy 14
GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343
cfy 14
121B
801C
SCT-595
CFY30
TSSOP-10-2
CFY 18
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GaAs pHEMT LOW SOT-343
Abstract: CLY 2
Text: GaAs Components Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
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OT-363
VQFN-16-2
SCT-598
GaAs pHEMT LOW SOT-343
CLY 2
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nec 2571 4 pin
Abstract: gl 2576 NEZ7785-15D NEZ3642-15D NEZ4450-15D NEZ5964-15D NEZ6472-15D nez5964-15dd
Text: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer 0.5 ±0.1 for microwave and satellite communications.
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C-Band Power GaAs FET
Abstract: NEZ3642-4D NEZ3642-8D NEZ4450-4D NEZ4450-8D NEZ5964-4D NEZ5964-8D NEZ6472-4D NEZ7177-4D NEZ7785-4D
Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm 0.5±0.1 The NEZ Series of microwave power GaAs FETs offer C1.5 4PLACES GATE 2.5MIN. high output power, high gain and high efficiency at C-band
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TGI8596-50
Abstract: TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL
Text: ▼ Microwave Semiconductors Product Guide 2009 Power GaAs FETs and GaAs MMICs Pout vs. Frequency Map .3 C-band Internally Matched Power GaAs FETs Pout vs. Frequency Map .4
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MSE-2008
MSE-2009
TGI8596-50
TMD7185-2
TIM5359-60SL
TIM8996-30
X-band Gan Hemt
TGI1414-50L
TMD0305-2
tim5964-60sl
TIM5964-6UL
TIM5359-4UL
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TMD1414-2
Abstract: TGM9398-25 8596-50
Text: Product Guide 2014 Microwave Semiconductors GaAs MMICs L and S-band Partially Matched Power GaAs FETs Pout vs. Frequency Map 80 49 48 60 TPM2828-60❋ TPM1919-60 40 46 44 ● Output Power vs. Frequency Map GaAs MMICs L and S-band Partially Matched Power GaAs FETs . 3
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TPM2828-60â
TPM1919-60
TPM2828-9â
TMD0708-2
TMD0608-4
TMD7185-2
TMD5872-2
TMD1925-3
TMD1013-1-431
TMD0507-2A
TMD1414-2
TGM9398-25
8596-50
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FLL57MK
Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.
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FLL810IQ-4C
FLL600IQ-2
FLL400IP-2
FLL300IL-1
FLL200IB-1
FLL300IL-2
FLL200IB-2
FLL300IL-3
FLL200IB-3
FLL57MK
ELM7785-60F
FLL400IP2
flc107
FLK027WG
FLC057WG
FLL357
fll177
FLL357ME
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Untitled
Abstract: No abstract text available
Text: Order this document by MC33169/D MC33169 Advance Information GaAs Power Amplifier Support IC GaAs POWER AMPLIFIER SUPPORT IC The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This
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MC33169/D
MC33169
MC33169
MC33169/D*
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GN02039B
Abstract: GN01087B GN01154B 2.4 GHz driver amplifier SW SPDT GN01081B GN01096B GN01105B GN01106B GN01121B
Text: FETs, IPD, IGBTs, GaAs MMICs • GaAs MMICs ● GaAs MMICs for Mobile Communication Use Block LowNoise Amp. Part No. Antenna Switch RF Characteristics typ. Applications GN01087B Single-chip front end VDD = 3.4 V, IDD = 5.0 mA, f = 1.9 GHz CG: 20 dB NF: 4.0 dB
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GN01087B
GN01096B
GN01121B
GN02029B
dB/12
GN02034B
GN04028N
GN04041N
GN04033N
GN01154B
GN02039B
GN01087B
GN01154B
2.4 GHz driver amplifier
SW SPDT
GN01081B
GN01096B
GN01105B
GN01106B
GN01121B
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DC bias of FET
Abstract: Tecdia DC bias of gaas FET GaAs FETs bias tee fet rf high power Excelics packaging
Text: Recommendations for the Handling, Mounting and Biasing of High Power GaAs FETs A. Handling Precautions: All GaAs FETs are sensitive to electrostatic discharge. It is Excelics policy that all GaAs FETs will be shipped in electrostatic protective packaging and the user must pay careful attention to the
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NE960R2
Abstract: NE960R200 NE960R275 NE961R200
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear
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NE960R2
NE961R200
NE960R200
NE960R275
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GaAs MESFET
Abstract: mesfet
Text: Section 1 GaAs FETs and PHEMTs Table of Contents Surface Mount GaAs M E S F E T . 1-3 Low Noise GaAs MESFET Chip .
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AFM06P2-000)
AFM08P2-000)
GaAs MESFET
mesfet
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band
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NEZ3642-4D,
NEZ4450-4D,
NEZ5964ter
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M 1661 S
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2415A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power
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MGFC2415A
MGFC2400
150mA
M 1661 S
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GaAs MESFET
Abstract: SPDT FETs MMIC ALPHA spdt Switch GaAs MESFET amplifier GHz Power FET GaAs MMIC SPDT Switch
Text: Section 3 GaAs FETs and High Frequency GaAs MMICs Table of Contents Millimeter Wave MMIC Capabilities. 3-3 GaAs FET MMIC SPST Switch Reflective DC-18 G H z .
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DC-18
MA01801
GaAs MESFET
SPDT FETs
MMIC
ALPHA spdt Switch
GaAs MESFET amplifier
GHz Power FET
GaAs MMIC SPDT Switch
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MGFC2430A
Abstract: L to Ku band amplifiers
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2430A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The M G FC2400 series GaAs FETs were designed fo r high frequency, m edium and high power GaAs FET with N-channel S chottky barrier gate type. FEATURES • High output power
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MGFC2430A
FC2400
Trouble13
MGFC2430A
L to Ku band amplifiers
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FETs MGFC47A7785 7 .7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC47A7785 device is an internally impedance-matched Unit : millimeters GaAs power FET especially designed for use in 7.7 ~ 8.5GHz
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MGFC47A7785
MGFC47A7785
47dBm
25deg
25deg
168mA
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.
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NE960R5
NE961R500
NE960R500
NE960R575
NE962R575
P14387E
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.
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NE960R2
NE961R200
NE960R200
NE960R275
P13775E
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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LORB
Abstract: NE2720 NE334S01
Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18
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NE23300
NE24200
NE27200
NE67400
NE32400
NE32500
NE32900
NE33200
NE325S01
NE329S01
LORB
NE2720
NE334S01
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Nippon capacitors
Abstract: No abstract text available
Text: O rder this docum ent by M C33169/D MOTOROLA Advance Information GaAs POWER AMPLIFIER SUPPORT IC GaAs Power Am plifier Support 1C SEMICONDUCTOR TECHNICAL DATA The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This
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C33169/D
MC33169
DCS1800
1PHX36012-0
MC33169/D
Nippon capacitors
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MA4F600-298
Abstract: transistor bul 3040 MA4F600 bul 3040 fet ft 30 GHZ
Text: M/A-COn SEMICONDUCTOR "t 3 D~| SbMBSlM ODDDbMb T r- Am 3i -ss MA4F600 Series Gallium Arsenide Low Noise Field Effect Transistor GaAs FET Preliminary Data Sheet Description and Applications The MA4F600 series of GaAs FETs is a low cost 0.8 ¡im gate length GaAs FET. The low noise
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MA4F600
90X90
MA4F600-298
transistor bul 3040
bul 3040
fet ft 30 GHZ
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mc331694
Abstract: Voltage Doubler application mc3316940 RF switch negative voltage generator
Text: 8 < MOTOROLA > MC33169 A dvance Inform ation GaAs Power Amplifier Support 1C GaAs POWER AMPLIFIER SUPPORT IC The M C33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM- PCN and DECT. This device provides negative voltages for full depletion of Enhanced MESFETs
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MC33169
C33169
DCS1800
MRFIC0913,
MC33169
mc331694
Voltage Doubler application
mc3316940
RF switch negative voltage generator
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