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    FLL177 Search Results

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    FLL177 Price and Stock

    FUJITSU Semiconductor Limited FLL177ME

    L-BAND MEDIUM & HIGH POWER GAAS FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics FLL177ME 26
    • 1 $99.9504
    • 10 $83.8294
    • 100 $83.8294
    • 1000 $83.8294
    • 10000 $83.8294
    		Buy Now

    FLL177 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLL177 Fujitsu Scan PDF
    FLL177ME Eudyna Devices TRANS JFET 15V 3ME Original PDF
    FLL177ME Fujitsu FET, P Channel, ID 0.9 A Original PDF
    FLL177ME Fujitsu V(ds): 15V V(gs): -5V 7.5W L-band medium & high power GaAs FET Scan PDF
    FLL177ME-E1 Fujitsu FET: P Channel: ID 0.9 A Original PDF

    FLL177 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    fujitsu gaas fet

    Abstract: FLL177 FLL177ME fujitsu gaas fet L-band
    Text: FLL177ME _ L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P-|C|g=32.5dBnn Typ. High Gain: G-|C|g=12.5dB (Typ.) High PAE: riadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION


    OCR Scan     		FLL177ME FLL177ME FCSI0598M200 fujitsu gaas fet FLL177 fujitsu gaas fet L-band PDF

    fll177

    Abstract: FLL177ME
    Text: FLL177ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=32.5dBm Typ. High Gain: G1dB=12.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL177ME is a Power GaAs FET that is specifically designed to


    Original     		FLL177ME FLL177ME fll177 PDF

    FLL177ME

    Abstract: No abstract text available
    Text: FLL177ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=32.5dBm Typ. High Gain: G1dB=12.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL177ME is a Power GaAs FET that is specifically designed to


    Original     		FLL177ME FLL177ME FCSI0598M200 PDF

    FLL177ME

    Abstract: High Power GaAs FET
    Text: FLL177ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=32.5dBm Typ. High Gain: G1dB=12.5dB (Typ.) High PAE: hadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL177ME is a Power GaAs FET that is specifically designed to


    Original     		FLL177ME FLL177ME FCSI0598M200 High Power GaAs FET PDF

    FLL177ME

    Abstract: Eudyna Devices 0.1 j100
    Text: FLL177ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=32.5dBm Typ. High Gain: G1dB=12.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL177ME is a Power GaAs FET that is specifically designed to


    Original     		FLL177ME FLL177ME Temperat4888 Eudyna Devices 0.1 j100 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLL177ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=32.5dBm Typ. High Gain: G1dB=12.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL177ME is a Power GaAs FET that is specifically designed to


    Original     		FLL177ME FLL177ME FCSI0598M200 PDF

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet PDF

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original     		FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME PDF