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    FLL357ME Price and Stock

    FUJITSU Limited FLL357MES

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA FLL357MES 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    FUJITSU Semiconductor Limited FLL357ME

    Trans JFET 10V 720mA GaAs Case ME
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics FLL357ME 230
    • 1 $248.5715
    • 10 $222.8572
    • 100 $222.8572
    • 1000 $222.8572
    • 10000 $222.8572
    		Buy Now

    FLL357ME Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLL357ME Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF

    FLL357ME Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FLL357ME

    Abstract: FLL357 fujitsu gaas fet
    Text: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to


    Original     		FLL357ME FLL357ME FCSI0598M200 FLL357 fujitsu gaas fet PDF

    FLL357ME

    Abstract: L-Band
    Text: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to


    Original     		FLL357ME FLL357ME L-Band PDF

    FLL357ME

    Abstract: High Power GaAs FET
    Text: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to


    Original     		FLL357ME FLL357ME Temperat4888 High Power GaAs FET PDF

    FLL357

    Abstract: No abstract text available
    Text: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: hadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to


    Original     		FLL357ME FLL357ME FCSI0598M200 FLL357 PDF

    FLL357ME

    Abstract: fujitsu gaas fet L-band
    Text: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to


    Original     		FLL357ME FLL357ME FCSI0598M200 fujitsu gaas fet L-band PDF

    Untitled

    Abstract: No abstract text available
    Text: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to


    Original     		FLL357ME FLL357ME PDF

    FLL357ME

    Abstract: FLL357
    Text: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to


    Original     		FLL357ME FLL357ME Temperatur4000 FLL357 PDF

    FLL357ME

    Abstract: fujitsu gaas fet
    Text: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P-|C|g=35.5dBnn Typ. High Gain: G-|C|g=11.5dB (Typ.) High PAE: riadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to


    OCR Scan     		FLL357ME FLL357ME FCSI0598M200 fujitsu gaas fet PDF

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet PDF

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original     		FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME PDF