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FUJITSU Limited FLL357MES Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	FLL357MES		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
FUJITSU Semiconductor Limited FLL357ME Trans JFET 10V 720mA GaAs Case ME
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	FLL357ME		230			1 $372.8573 10 $334.2858 100 $334.2858 1000 $334.2858 10000 $334.2858	Buy Now

FLL357ME Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FLL357ME		Eudyna Devices	L-Band Medium & High Power GaAs FET		Original	PDF

FLL357ME Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FLL357ME Abstract: FLL357 fujitsu gaas fet Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to	Original	FLL357ME FLL357ME FCSI0598M200 FLL357 fujitsu gaas fet	PDF
FLL357ME Abstract: L-Band Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to	Original	FLL357ME FLL357ME L-Band	PDF
FLL357ME Abstract: High Power GaAs FET Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to	Original	FLL357ME FLL357ME Temperat4888 High Power GaAs FET	PDF
FLL357 Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: hadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to	Original	FLL357ME FLL357ME FCSI0598M200 FLL357	PDF
FLL357ME Abstract: fujitsu gaas fet L-band Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to	Original	FLL357ME FLL357ME FCSI0598M200 fujitsu gaas fet L-band	PDF
Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to	Original	FLL357ME FLL357ME	PDF
FLL357ME Abstract: FLL357 Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to	Original	FLL357ME FLL357ME Temperatur4000 FLL357	PDF
FLL357ME Abstract: fujitsu gaas fet Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P-\|C\|g=35.5dBnn Typ. High Gain: G-\|C\|g=11.5dB (Typ.) High PAE: riadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to	OCR Scan	FLL357ME FLL357ME FCSI0598M200 fujitsu gaas fet	PDF
CD 294 Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-\|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package	OCR Scan	FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet	PDF
FLL57MK Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.	Original	FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME	PDF