fll57
Abstract: FLL57MK
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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FLL57MK
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0.1 j100
Abstract: FLL57MK fll57
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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FLL57MK
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fll57
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FLL57MK
Abstract: fll57 fujitsu gaas fet L-band fujitsu gaas fet
Text: FLL57MK _ L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P ^ b = 36.0dBm Typ. High Gain: = 11.5dB (Typ.) High PAE: riadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION
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FLL57MK
FLL57MK
FCSI0598M200
fll57
fujitsu gaas fet L-band
fujitsu gaas fet
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FLL57MK
Abstract: No abstract text available
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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FLL57MK
FLL57MK
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fll57
Abstract: No abstract text available
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: hadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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FLL57MK
FLL57MK
FCSI0598M200
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FLL57MK
Abstract: fll57 01 j100
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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FLL57MK
FLL57MK
FCSI0598M200
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01 j100
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Untitled
Abstract: No abstract text available
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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FCSI0598M200
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CD 294
Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package
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FLC167WF
FLC167WF
FCSI0598M200
CD 294
FLL357
348dB
FLL400IP-2
FLK102MH-14
hemt low noise die
Fujitsu GaAs FET Amplifier
FLK017XP
FLL120
fujitsu gaas fet
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FLL57MK
Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.
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FLL810IQ-4C
FLL600IQ-2
FLL400IP-2
FLL300IL-1
FLL200IB-1
FLL300IL-2
FLL200IB-2
FLL300IL-3
FLL200IB-3
FLL57MK
ELM7785-60F
FLL400IP2
flc107
FLK027WG
FLC057WG
FLL357
fll177
FLL357ME
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