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    FLL177ME Search Results

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    FLL177ME Price and Stock

    FUJITSU Semiconductor Limited FLL177ME

    L-BAND MEDIUM & HIGH POWER GAAS FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics FLL177ME 130
    • 1 $464.2857
    • 10 $464.2857
    • 100 $464.2857
    • 1000 $464.2857
    • 10000 $464.2857
    		Buy Now

    FLL177ME Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLL177ME Eudyna Devices TRANS JFET 15V 3ME Original PDF
    FLL177ME Fujitsu FET, P Channel, ID 0.9 A Original PDF
    FLL177ME Fujitsu V(ds): 15V V(gs): -5V 7.5W L-band medium & high power GaAs FET Scan PDF
    FLL177ME-E1 Fujitsu FET: P Channel: ID 0.9 A Original PDF

    FLL177ME Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fll177

    Abstract: FLL177ME
    Text: FLL177ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=32.5dBm Typ. High Gain: G1dB=12.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL177ME is a Power GaAs FET that is specifically designed to


    Original     		PDF FLL177ME FLL177ME fll177

    FLL177ME

    Abstract: No abstract text available
    Text: FLL177ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=32.5dBm Typ. High Gain: G1dB=12.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL177ME is a Power GaAs FET that is specifically designed to


    Original     		PDF FLL177ME FLL177ME FCSI0598M200

    FLL177ME

    Abstract: High Power GaAs FET
    Text: FLL177ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=32.5dBm Typ. High Gain: G1dB=12.5dB (Typ.) High PAE: hadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL177ME is a Power GaAs FET that is specifically designed to


    Original     		PDF FLL177ME FLL177ME FCSI0598M200 High Power GaAs FET

    FLL177ME

    Abstract: Eudyna Devices 0.1 j100
    Text: FLL177ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=32.5dBm Typ. High Gain: G1dB=12.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL177ME is a Power GaAs FET that is specifically designed to


    Original     		PDF FLL177ME FLL177ME Temperat4888 Eudyna Devices 0.1 j100

    Untitled

    Abstract: No abstract text available
    Text: FLL177ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=32.5dBm Typ. High Gain: G1dB=12.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL177ME is a Power GaAs FET that is specifically designed to


    Original     		PDF FLL177ME FLL177ME FCSI0598M200

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original     		PDF FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME

    fujitsu gaas fet

    Abstract: FLL177 FLL177ME fujitsu gaas fet L-band
    Text: FLL177ME _ L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P-|C|g=32.5dBnn Typ. High Gain: G-|C|g=12.5dB (Typ.) High PAE: riadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION


    OCR Scan     		PDF FLL177ME FLL177ME FCSI0598M200 fujitsu gaas fet FLL177 fujitsu gaas fet L-band

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		PDF FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet