Low Drop Out Regulators
Abstract: 7585C DIL 16
Text: o UCC2930-3\UCC3930-3 IIMTKORATKO C IR C U IT S ADVANCED INFORMATION UNITRODE Cellular Telephone Power Converter DESCRIPTION FEATURES BiCMOS Low Power RF/Cellular power management Negative 2.5 Volt @ 5 m A regulator for GaAs MESFET Separate Micro-power 3.3 V logic
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UCC2930-3\UCC3930-3
UCC2930-3\UCC3930-3
Low Drop Out Regulators
7585C
DIL 16
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Untitled
Abstract: No abstract text available
Text: UCC2930-3/-5 UCC3930-3/-5 UNITRODE PRELIMINARY Cellular Telephone Power Converter FEATURES BiCMOS Low Power RF/Cellular Power Management Negative Supply Voltage at 5mA for GaAs MESFET Amplifiers Separate Micro-Power Logic Supply Enable Low Quiescent, 3mA, Operating
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UCC2930-3/-5
UCC3930-3/-5
200mV)
UCC3930-3/-5
UDG-96036-1
0SK12DICT-ND
UCC3930-3
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NEZ1414-3E
Abstract: No abstract text available
Text: 3 W 14 GHz INTERNALLY NEZ1414-3E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.5 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING
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NEZ1414-3E
NEZ1414-3E
24-Hour
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AN1032
Abstract: NES2427P-140 transistor a 1837
Text: PRELIMINARY DATA SHEET 140 W S-BAND TWIN POWER GaAs MESFET NES2427P-140 OUTLINE DIMENSIONS Units in mm FEATURES • • • • HIGH OUTPUT POWER: 140 W TYP HIGH LINEAR GAIN: 9.5 dB TYP HIGH EFFICIENCY: 41% TYP USABLE IN BALANCED OR PUSH-PULL CONFIGURATION.
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NES2427P-140
NES2427P-140
24-Hour
AN1032
transistor a 1837
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NEZ3436-30E
Abstract: No abstract text available
Text: S-BAND INTERNALLY NEZ3436-30E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IM3 (@33 dBm SCL) (Verified by a Wafer Qual Test) 24±0.2 • HIGH LINEAR GAIN: 10.0 dB
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NEZ3436-30E
NEZ3436-30E
24-Hour
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RF MESFET S parameters
Abstract: transistor GaAs FET s parameters NES2427P-30
Text: 30 W S-BAND TWIN NES2427P-30 POWER GaAs MESFET FEATURES • • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 30 W TYP HIGH DRAIN EFFICIENCY: 38% TYP HIGH LINEAR GAIN: 12 dB TYP PUSH-PULL TYPE N-CHANNEL GaAS MESFET PACKAGE OUTLINE T-86 45° R1.2 ± 0.3
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NES2427P-30
NES2427P-30
24-Hour
RF MESFET S parameters
transistor GaAs FET s parameters
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NEZ6472-15D
Abstract: NEZ6472-4D NEZ6472-4DL NEZ6472-8D NEZ6472-8DL
Text: NEZ6472-15D NEZ6472-15DL NEZ6472-8D NEZ6472-8DL NEZ6472-4D NEZ6472-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER PARAMETERS AND CONDITIONS P1dB PIdB1 ηADD Output Power at IDSQ = 0.8A, (RF Off
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NEZ6472-15D
NEZ6472-15DL
NEZ6472-8D
NEZ6472-8DL
NEZ6472-4D
NEZ6472-4DL
NEZ6472-15D/15DL
NEZ6472-8D/8DL
NEZ6472-15D
NEZ6472-4D
NEZ6472-4DL
NEZ6472-8D
NEZ6472-8DL
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x-band microwave fet
Abstract: NEZ1011-2E 17148
Text: 2 W X-BAND INTERNALLY NEZ1011-2E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 8.5 dB TYP 8.25 ± 0.15 • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGE
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NEZ1011-2E
NEZ1011-2E
SiO242
24-Hour
x-band microwave fet
17148
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NEZ3642-15D
Abstract: NEZ3642-15DL NEZ3642-4D NEZ3642-4DL NEZ3642-8D NEZ3642-8DL
Text: NEZ3642-15D NEZ3642-15DL NEZ3642-8D NEZ3642-8DL NEZ3642-4D NEZ3642-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1DB ηADD IDS GL IM3 -X DL Option Only IDSS VP BVDGO gm RTH(CH-C CHARACTERISTICS
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NEZ3642-15D
NEZ3642-15DL
NEZ3642-8D
NEZ3642-8DL
NEZ3642-4D
NEZ3642-4DL
NEZ3642-15D
NEZ3642-15DL
NEZ3642-4D
NEZ3642-4DL
NEZ3642-8D
NEZ3642-8DL
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ka band gaas fet Package
Abstract: ka band power fet gaas fet micro-X Package GHZ micro-X Package power amplifier 4 ghz power amplifier power amplifier 5 ghz
Text: GaAs FETs and PHEMTs 3 9 Q. & Specifications Applications Package Part Number 21 dB Pi dB @ 18 GHz Medium Power Amplifier Chip Via AFM04P2-000 Low Noise/Medium Power MESFET 20 dB Pi dB @ 18 GHz Medium Power Amplifier Chip (Non-Via) AFM04P3-000 Low Noise/Medium
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AFM04P2-000
AFM04P3-000
AFM04P3-212
AFM04P3-213
AFM06P2-000
AFM06P2-212
AFM06P2-213
AFM06P3-212
AFM06P3-213
AFM08P2-000
ka band gaas fet Package
ka band power fet
gaas fet micro-X Package
GHZ micro-X Package
power amplifier 4 ghz
power amplifier
power amplifier 5 ghz
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NE76038
Abstract: uPC2710 uPC2721 AN1015 UPC2710T UPC2721GR low noise block down converter 1 henry INDUCTOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 L4* Low noise
Text: California Eastern Laboratories AN1015 APPLICATION NOTE Low Cost, High Performance Receiver For Wireless Applications INTRODUCTION down converter. The LNA was designed using a discrete low noise GaAs MESFET NE76038 with a matching structure made using discrete components. The NE76038 is fabricated
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AN1015
NE76038)
NE76038
uPC2710
uPC2721
AN1015
UPC2710T
UPC2721GR
low noise block down converter
1 henry INDUCTOR
POWER AMPLIFIER CIRCUIT DIAGRAM 10000
L4* Low noise
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Micro-X marking "K"
Abstract: micro-X Package MARKING CODE C
Text: S IE M E N S CFY27 HiRel Ku-Band GaAs General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • High gain, medium power
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CFY27
CFY27-38
CFY27-P
CFY27-nnl:
QS9000
Micro-X marking "K"
micro-X Package MARKING CODE C
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KGL4205
Abstract: D flip flop IC
Text: DATA SHEET O K I G a A s P R O D U C T S KGL4205 10-Gbps D-Flip Flop IC 0.2µm Gate Length GaAs MESFET Technology February 2000 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
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KGL4205
10-Gbps
KGL4205
10-GHz
24-pin
D flip flop IC
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Untitled
Abstract: No abstract text available
Text: MESFET HIGH IP3 MIXER SURFACE MOUNT MODEL: SFM-2A-1 OPTIMIZED BANDWIDTH FEATURES: ► High Performance ► High IP3 ► Small Size, Surface Mount ► RoHS Compliant ► Lead Free REL-PRO Technology SPECIFICATIONS Rev. C 09/01/06 Frequency Conversion Loss (dB)
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ITTS501AJ
Abstract: rf05v itt501 SPDT HIGH POWER
Text: SPDT High Power T/R Switch ITTS501AJ PRELIMINARY INFORMATION FEATURES • • • MSOP-8 package Positive Control Self-Aligned MSAG -Switch MESFET Process Description Maximum Ratings T The ITT501AJ is a high power SPDT switch in a very small plastic MSOP package for
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ITTS501AJ
ITT501AJ
ITTS501AJ
rf05v
itt501
SPDT HIGH POWER
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ITT8507D
Abstract: No abstract text available
Text: 6W Power Amplifier Die 13.0 – 14.5 GHz ITT8507D ADVANCED INFORMATION FEATURES • • • • • Broadband Performance 20% Typical Power Added Efficiency at P1dB 17 dB Typical Gain at P1dB 50Ω Input/Output Impedance Self-Aligned MSAG MESFET Process
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ITT8507D
ITT8507D
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ITT313503D
Abstract: No abstract text available
Text: Low Noise Amplifier Die 8.0 – 11.0 GHz ITT313503D FEATURES • • • • ADVANCED INFORMATION Balanced Three Stage LNA with Limiter 8 to 11 GHz Operation 50Ω Input Impedance Excellent Return Loss Self-Aligned MSAG MESFET Process DESCRIPTION MAXIMUM RATINGS
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ITT313503D
ITT313503D
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10W Power Amplifier
Abstract: ITT338509D 6 ghz amplifier 10w
Text: 10W Power Amplifier Die 8.0 – 11.0 GHz ITT338509D FEATURES • • • • ADVANCED INFORMATION Three Stage Single-ended High Power Amplifier Broadband Performance 35% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process
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ITT338509D
ITT338509D
10W Power Amplifier
6 ghz amplifier 10w
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kaba
Abstract: 149-188
Text: Ka-Band Power GaAs MESFET 61Alpha AFM04P2-000 Features • 21 dBm Output Power at 18 GHz ■ High Associated Gain, 9 dB at 18 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -4 0 GHz ■ 0 .25 jj.m Ti/Pt/Au Gates ■ Passivated Surface
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AFM04P2-000
61Alpha
kaba
149-188
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opto fet
Abstract: 00242A P35-1110 P35-1110-0 P35-1110-1 GaAs MESFET for opto receivers microwave MARCONI 50ln 50sn
Text: FEATURES • General Purpose Amplifier In PIN FET Receiver ■ Transimpedance Amplifier For Wide Band PIN FET Receiver ■ High Gm, Typically 45 mS ■ Low Gate Leakage Current, Typically 10nA At -5 Volts & MODEL NO. P35-1110 GaAs MESFET For OPTO Receivers
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P35-1110
0242A
opto fet
00242A
P35-1110
P35-1110-0
P35-1110-1
GaAs MESFET for opto receivers
microwave MARCONI
50ln 50sn
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ITT373501D
Abstract: digital phase shifter mhz
Text: X-Band Serial Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die ITT373501D FEATURES • • • ADVANCED INFORMATION Phase Shifter / Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance Self-Aligned MSAG MESFET Process RF O ut R F In
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ITT373501D
ITT373501D
150umX150um
digital phase shifter mhz
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ITT8506D
Abstract: No abstract text available
Text: 8W Power Amplifier Die 9.5 – 10.5 GHz ITT8506D ADVANCED INFORMATION Features • • • 38% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process Description Maximum Ratings (T The ITT8506D is a three stage MMIC power
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ITT8506D
ITT8506D
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ITTS402AH
Abstract: J12-3
Text: SP4T Switch, 3 Volt Positive Control ITTS402AH ADVANCED INFORMATION FEATURES • • • • • QSOP-28 lead package Non-Reflective Low DC Power Consumption Positive Control when “floated” with capacitors Self-Aligned MSAG MESFET Process Description
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ITTS402AH
QSOP-28
ITTS402AH
J12-3
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LTC4098-3.6
Abstract: L62622.6 l-band Phase Shifter l6262-2.6 L6262S2.6 SEH-01T-P0.6 SXA-01GW-P0.6 B180 CHP6013-SRF L6262S-2.6
Text: CHP6013-SRF L-band Phase Shifter GaAs Monolithic Microwave IC in surface mount ceramic-metal package Description Main Features The CHP6013 is a L-band monolithic 6-bit phase shifter. The circuit is manufactured with a standard 0.7µm MESFET process : via holes through the substrate, air bridges
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CHP6013-SRF
CHP6013
DSCHP60133112
LTC4098-3.6
L62622.6
l-band Phase Shifter
l6262-2.6
L6262S2.6
SEH-01T-P0.6
SXA-01GW-P0.6
B180
CHP6013-SRF
L6262S-2.6
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