TSOP50
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V16160 _ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI6160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The V16160 achieves high integration, high-speed operation, and low-power
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MSM51V16160
576-Word
16-Bit
MSM51VI6160
MSM51V16160
42-pin
50/44-pin
TSOP50
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V16160 B/B8 L E 2 G 0 0 8 1 -17-41 1,048,576-Word x 16-Bit D YN A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V I6160B / BSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. TheMSM51 V I6160B/BSL achieves high integration, high-speed operation, and
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MSM51
V16160
576-Word
16-Bit
MSM51V
I6160B
TheMSM51
I6160B/BSL
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09A10
Abstract: No abstract text available
Text: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and
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MSM56
V16160
288-Word
16-Bit
MSM56V16160
cycles/64
09A10
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The V16160 is a 2-bank x 524,288-word x 16-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible.
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MSM56
V16160
288-Word
16-Bit
MSM56V16160
cles/64
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and
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OCR Scan
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PDF
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MSM56
V16160
288-Word
16-Bit
MSM56V16160
cycles/64
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51V1616
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V16160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI6160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The V16160 achieves high integration, high-speed operation, and low-power
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OCR Scan
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PDF
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MSM51
V16160
576-Word
16-Bit
MSM51VI6160
MSM51V16160
42-pin
51V1616
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-10168-4E MEMORY ill lilllllllllllllllllllllllllllllllll 1M X 1 6 BITS CMOS 1,048,576 x 16 BITS Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu V16160A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory
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DS05-10168-4E
MB81V16160A
16-bit
256-bits
F9704
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HY51V16160C
Abstract: No abstract text available
Text: “H Y U N D A I HY51V18160C, V16160C 1M X 16bit CMOS DRAM PRELIMINARY DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high
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HY51V18160C,
HY51V16160C
HY51V18160CJC
HY51V18160CSLJC
HY51V18160CTC
HY51V18160CSLTC
HY51V16160CJC
HY51V16160CSLJC
HY51V16160CTC
HY51V16160CSLTC
HY51V16160C
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is M 5 M 4 V 1 6 1 6 0 C T P - 5 , - 6 , - 7 , -5S,-6S,-7S FAST PAGE MODE 16777216-BIT 1048576-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal
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16777216-BIT
1048576-WORD
16-BIT)
16-bit
M5M4V16160CTP-5
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 4 V 1 6 1 6 0 B J ,T P ,R T - 6 ,- 7 ,- 8 ,- 6 S ,- 7 S ,- 8 S _ FAST PAGE MODE 16777216-BIT 1048576-WQRP BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process,and is ideal for
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16777216-BIT
1048576-WQRP
16-BIT
1048576-word
16-bit
M5M4V16160BJ
1fl25
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MSM51V16160DSL
Abstract: No abstract text available
Text: E2G0130-17-61 O K I Semiconductor MSM5 1V I6 1 6 0 P/PSL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N The M SM V16160D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon gate CMOS technology. The V16160D / DSL achieves high integration, high-speed operation,
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E2G0130-17-61
MSM51VI6160P/PSL
576-Word
16-Bit
MSM51V16160D/DSL
heMSM51V16160D/DSLachieveshighintegration
42-pin
MSM51V16160DSL
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a11u
Abstract: taser circuit 42-PIN DD1752
Text: O K I Semiconductor V16160_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The V16160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the V16160 is OKI's CMOS silicon gate process technology.
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MSM51V16160_
576-Word
16-Bit
MSM51V16160
cycles/64ms
a11u
taser circuit
42-PIN
DD1752
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Untitled
Abstract: No abstract text available
Text: MEMORY 1M X 16 BIT FAST PAGE MOBEDYNAMICRA V16160B-50/-60/-50L/-60L CMOS 1,048,576 x 16 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu V16160B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The V16160B features a ‘last page” mode of operation whereby
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MB81V16160B-50/-60/-50L/-60L
MB81V16160B
16-bit
F9712
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Untitled
Abstract: No abstract text available
Text: - H Y U N D A I * HY51V18160B,HY51 V I6160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY51V18160B
I6160B
1Mx16,
16-bit
DQO-OQ15)
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor V16160_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The V16160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the V16160 is OKI's CMOS silicon gate process technology.
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MSM51V16160_
576-Word
16-Bit
MSM51V16160
16-bit
cycles/64ms
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Untitled
Abstract: No abstract text available
Text: FUJITSU S E MI CONDUCT OR D ATA S H E E T D S 0 5 -1 0168-2E MEMORY CMOS 1M x 16 BIT FAST PAGE MODE DYNAMI C RAM M B 8 1 V 1 6 1 6 0 A -60/-70 CMOS 1,048,576 x 16BIT Fast Page Mode Dynamic RAM • DESCRIPTION T h e F u jit s u M B81 V1 61 60 A is a fu lly d e c o d e d C M O S D y n a m i c R A M D R A M t h a t c o n ta i n s 1 6 ,7 7 7 , 2 1
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0168-2E
16BIT
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51V18160B,HY51 V 16160B 1Mx16, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY51V18160B
16160B
1Mx16,
16-bit
1Mx16
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RT-6
Abstract: M5M4V16160 1,048,576 16 bit
Text: M 5 M 4 V 1 6 1 6 0 B J J P ,R T - 6 r 7 r 8 r 6 S , 7 S , « S FAST PAGE MODE 16777216-BIT 1048576-WQRD BY 16-BIT } DYNAMIC RAM DESCRIPTION This is a family of 1048576-w ord by 16-bit dynamic RAMS, fabricated with the high performance C M OS process,and is ideal for
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16777216-BIT
1048576-WQRD
16-BIT
1048576-w
16-bit
M5M4V16160BJ
1Q48576-WORD
RT-6
M5M4V16160
1,048,576 16 bit
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 1M x 16 BITS FAST PAGE MODE DYNAMIC RAM V16160 A-60/60L/-70/70L CMOS 1,048,576 x 16 BITS Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V16160A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The V16160A features a “fast page” mode of operation whereby
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MB81V16160
-60/60L/-70/70L
MB81V16160A
16-bit
256-bits
MB81V16160A
F50006S-2C-1
MB81V16160A-60/60L/-70/70L
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Untitled
Abstract: No abstract text available
Text: •'HYUNDAI HY51V18160B, V16160B _ 1M x 16bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CM O S DRAMs. Fast Page m ode offers high speed random access o f m em ory cells within the
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HY51V18160B,
HY51V16160B
16bit
HY51V18160BJC
HY51V18160BSLJC
HY51V18160BTC
HY51V18160BSLTC
Y51V16160BJC
HY51V16160BSLJC
HY51V16160BTC
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Untitled
Abstract: No abstract text available
Text: V16160A/ NN51V18160A series Fast Page Mode CMOS 1M x 16bit Dynamic RAM M x w D N /a x Preliminary Specification d e s c rip tio n The V16160A/18160A series is a high performance CMOS Dynamic Random Access Memory orga nized as 1,048,576 words by 16 bits. The V16160A/18160A series is fabricated with advanced CMOS
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NN51V16160A/
NN51V18160A
16bit
NN51V16160A/18160A
128ms
NN51V18
60AXX
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