MSM51 Search Results

MSM5116800C

Contextual Info: Pr E2G0110-18-42 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116800C is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116800C achieves high integration, high-speed operation, and low-power

MSM51V16165D

Abstract: MSM51V16165DSL SOJ42-P-400-1
Contextual Info: Pr E2G0132-17-61 el im y 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V16165D/DSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. The MSM51V16165D/DSL achieves high integration, high-speed operation,

MSM51V17805D

Abstract: MSM51V17805 MSM51V17805DSL
Contextual Info: Pr E2G0129-17-61 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V17805D/DSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805D/DSL achieves high integration, high-speed operation,

MSM51V17800

Abstract: MSM51V17800DSL
Contextual Info: Pr E2G0127-17-61 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800D/DSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17800D/DSL achieves high integration, high-speed operation,

msm51v17400d

Abstract: MSM51V17400 MSM51V17400DSL
Contextual Info: Pr E2G0123-17-61 el im y 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400D/DSL is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17400D/DSL achieves high integration, high-speed operation,

MSM514900CSL

Contextual Info: E2G0025-17-42 ¡ Semiconductor MSM514900C/CSL ¡ Semiconductor This MSM514900C/CSL version: Jan. 1998 Previous version: May 1997 524,288-Word ¥ 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900C/CSL is a 524,288-word ¥ 9-bit dynamic RAM fabricated in Oki's silicon-gate

MSM5117800

Abstract: MSM5117800C
Contextual Info: E2G0112-18-42 O K I Semiconductor MSM5 1 17800 C This version: Apr. 1998 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800C is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117800C achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5 1 1 7 1 7 0 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117170 achieves high integration, high-speed operation, and low-power

MSM514221A

Abstract: MSM518221 MSM518222 MSM518222-25JS MSM518222-30ZS MSM518222-40JS L171B
Contextual Info: O K I Semiconductor MSM518222 262,214 Word x 8-bit Field Memory DESCRIPTION The OKI MSM518222 is a high performance 2M bit Field Memory designed for applications such as HDTV {high definition television , TBC time base correction), TVs/VCRs w ith digital effects, multimedia or other applications where serial data storage is required. The 262,214 word depth allows for

bq785

Abstract: 20-P-300-1 MSM514100DL ZIP20-P-400-1 msm514100d
Contextual Info: O K I Semiconductor MSM5141 OOP/PL_ E2G0022-17-41 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and

MSM51V17805

Abstract: MSM51V17805DSL
Contextual Info: E2G0129-17-61 O K I Semiconductor MSM51V17805D/DSL 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION MSM51V17805D/DSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805D/DSL achieves high integration, high-speed operation,

MSM5116160

Abstract: dq8e N4409
Contextual Info: O K I Semiconductor MSM5116160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low -pow er

MSM51V18165BSL

Abstract: S0j42-P-400-127 msm51v18165b
Contextual Info: O K I Semiconductor MSM5 1V18 1 65B/BSL_ E2G 0087-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION MSM51 V18165B/BSL is a 1,048,576-word x 16-bit dynamic RAMfabricated in Oki's silicon-gate CMOS technology. The MSM51V18165B/BSL achieves high integration, high-speed operation, and

transistor sl 431

Abstract: ZIP40-P-475
Contextual Info: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate MSM51419 0 /SL is OKI's CMOS silicon gate process technology.

MSM5118165B

Abstract: TSOP 86 Package
Contextual Info: O K I Semiconductor MSM5118165B_ E2G 0055-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION MSM5118165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5118165B achieves high integration, high-speed operation, and low-power

MSM5117400

Contextual Info: O K I Semiconductor MSM5117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N T he M SM 5117400 is a n ew gen eratio n d yn am ic org an ized as 4,194,304-word x 4-bit. T he technology used to fabricate the M SM 5 1 17400 is O K I's C M O S silicon gate process technology.

V1640

Abstract: MSM51V16405D MSM51V16405DSL
Contextual Info: E2G0124-17-61 O K I Semiconductor MSM5 1V1 6 4 0 5 P/PSL 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION MSM51 V16405D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16405D/DSL achieves high integration, high-speed operation,

MSM5116400C

Contextual Info: E 2 G 0 1 06-18-42 V $ \ O K I S e m ic o n d u c to r ^ve^on^.i*«^ M SM 5 1 1 6 4 0 0 C_ 4,194,304-W ord x 4 -B it D Y N A M IC R A M : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

MSM5117405

Abstract: MSM5117405B
Contextual Info: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power

m51164

Abstract: MSM5116405A M5116405
Contextual Info: Um O K I Semiconductor MSM5 1 16405 A 4,194,304-Word x 4-Bit DYN A M IC RAM : FAST PAGE M O D E TYPE W ITH EDO DESCRIPTION The MSM5116405A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116405A achieves high integration, high-speed operation, and low-power

MSM511000

Abstract: ZIP20-P-400 dip26
Contextual Info: O K I Semiconductor MSM511000B/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is

Contextual Info: O K I Semiconductor MSM51V16170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51 V16170isal ,048,576-word x 16-bit dy namic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16170 achieves high integration, high-speed operation, and low-power

MSM51V16805A

Contextual Info: • O K I Semiconductor_ M SM 51V16805A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FA ST P A G E M O D E T Y P E WITH ED O DESCRIPTION The MSM51V16805A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16805A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16805A is

Contextual Info: O K I Semiconductor MSM5 1 V1 7 1 6 0 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCR IPTIO N The MSM51V17160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17160 achieves high integration, high-speed operation, and low-power