MSM511000 Search Results

MSM511000

Abstract: ZIP20-P-400 dip26
Contextual Info: O K I Semiconductor MSM511000B/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is

MSM511000

Abstract: ZIP20-P-400 msm511000h
Contextual Info: O K I Semiconductor MSM5 1 1 0 0 0 H_ _ 1,048,576-W ord x 1-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E D ESCRIPTIO N The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

MSC2313A-80YS8

Contextual Info: O K I semiconductor MSC2313A-xxYS8/KS8_ 1,048,576 Word BY 8 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2313A-xxYS8/KS8 is a fully decoded, 1,048,576 word x 8 bit CMOS dynamic random access memory composed of eight 1Mb DRAMs in SOJ MSM511000AJS . The mounting of eight SOJs

1ST24

Abstract: MSC2312B-70YS9
Contextual Info: O K I Semiconductor M SC2312B-xxYS9/KS9 1,048,576-Word by 9-Bit DRAM Module: Fast Page Mode D ESC R IP TIO N The OKI M SC 2312B -xxY S9/K S9 is a fully decoded 1,048,576-w ord x 9-bit CM O S D ynam ic Random Access Memory Module com posed of nine 1-Mb DRAM s in SOJ MSM511000B packages mounted with

Contextual Info: O K I Semiconductor MSM5110 OOB/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-w ord x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpow er consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is

Contextual Info: O K I Semiconductor MSM5110OOB/BL_ 1,048,576-Word x 1-Bit DYN A M IC RAM : FAST PAGE M O D E TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is

Contextual Info: O K I Semiconductor MSM511000H_ 1,048,576-Word x 1-Bit DYN A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power

Contextual Info: Semiconductor OKI MSM511000H 1,048,576-Word x 1-Bit DYN A M IC RA M : FAST PAGE M O D E TYPE DESCRIPTION The MSM511000H is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000H achieves high integration, high-speed operation, and low-power

MSM511000

Abstract: MSM511000CL ZIP20-P-400 TWC-S5
Contextual Info: O K I Semiconductor MSM5 1 10 OOC/CL_ 1,048,576-Word x 1-Bit D Y N A M IC R A M : FAST P A G E M O D E TY PE DESCRIPTION The MSM511000C/CL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000C/CL is

diagram of hi 3520

Contextual Info: O K I Semiconductor MSC2313B-xxYS8/KS8 1,048,576-Word by 8-Bit DRAM Module: Fast Page Mode D ESC R IPTIO N The O KI M SC 2313B -xxY S8/K S8 is a fully decoded 1,048,576-w ord x 8-bit CM O S D ynam ic Random Access Memory Module composed of eight 1-Mb DRAMs in SOJ MSM511000B packages mounted with

MSM511000A-8A

Abstract: tos 40101 MSM511000 msm511000a DIN 46231
Contextual Info: i4bE D • b?eHE4ü O K I OKI OOOTSOM I b ô «O K IJ SEMI CONDUCTOR 6R0UP semiconductor MSM511000A r - V i '2 3 1,048,576-W ORD x 1 -BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511000A is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The tech­

bl 9 a2

Abstract: 18-PIN 20-PIN 26-PIN ZIP20-P-400
Contextual Info: O K I Sem iconductor M SM 511000B /B L _ 1,048,576-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM5110OOC/CL 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000C/CL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000C/CL is

Contextual Info: O K I semiconductor MSM 511000A 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM511000A is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the MSM 511000A is OKI's CMOS silicon gate process technology.

MSC2313KS8

Contextual Info: O K I SE M IC O ND UC T OR GROUP 10E D g £,724540 OpD43fc^ □ | Q 1C 1 MSC2313YS8/KS8 1 ,0 4 8 ,5 7 6 BY 8 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki M SC2313YS8/KS8 is a fully decoded, 1,048,576 words x 8 bit CMOS dynamic random access memory composed of nine 1Mb DRAMs in SOJ MSM511000JS . The mounting of nine SOJs

Contextual Info: O K I Semiconductor MSC2312B-xxYS9/KS9 1,048,576-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2312B-xxYS9/KS9 is a fully decoded 1,048,576-word x 9-bit CMOS Dynamic Random Access Memory Module composed of nine 1-Mb DRAMs in SOJ MSM511000B packages mounted with

Contextual Info: O K I semiconductor MSC2312 YS9/KS9 1,048,576 BY 9 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki MSC2312YS9/KS9 is a fully decoded, 1,048,576 words x 9 bit CMOS dynamic random access memory composed of nine 1 Mb DRAMs in SOJ MSM511000JS . The mounting of nine SOJs

Contextual Info: O K I Semiconductor MSM6791 DRAM Interface IC GENERAL DESCRIPTION The MSM6791 can be used as a memory for voice data by connecting OKI solidstate recording and playback ICs MSM6688 and MSM6789A . FEATURES • DRAM (x 1-bit configuration) lM-bit DRAM (MSM511000A, MSM511001A): 8 pcs. can be connected.

MSM511000

Abstract: ZIP20 msm511000c
Contextual Info: J2G0009-17-41 作成：1998年 1月 MSM511000C/CL l 前回作成：1997年 5月 ¡ 電子デバイス MSM511000C/CL 1,048,576-Wordx1-Bit DYNAMIC RAM：高速ページモード n 概要 MSM511000C/CLはCMOSプロセス技術を用いた1,048,576ワ−ド×1ビット構成のダイナミックランダ

Contextual Info: OKI Semiconductor MSIW5110OOB/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.

MSM511000C

Abstract: MSM511000 MSM511000CL
Contextual Info: E2G0009-17-41 ¡ Semiconductor MSM511000C/CL ¡ Semiconductor This version: Jan. 1998 MSM511000C/CL Previous version: May 1997 1,048,576-Word ¥ 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000C/CL is a 1,048,576-word ¥ 1-bit dynamic RAM fabricated in Oki's silicon-gate

Contextual Info: O K I Semiconductor MSC2313B-xxYS8/KS8 1,048,576-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2313B-xxYS8/KS8 is a fully decoded 1,048,576-word x 8-bit CMOS Dynamic Random Access Memory M odule composed of eight 1-Mb DRAMs in SOJ MSM511000B packages m ounted with

BL-70

Contextual Info: O K I semiconductor MSM511000B/BL 1,048,576-W ord x 1-Bit DYNAM IC RAM GENERAL DESCRIPTION The MSM511000 B/BL is a new generation dynamic RAM organized as 1,048,576-words x 1bit. The technology used to fabricate the MSM511000 B/BL is OKI's CMOS silicon gate process technology. The