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    ROHM Semiconductor MSM56V16160K8T3K

    IC DRAM 16MBIT PAR 50TSOP II
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    DigiKey MSM56V16160K8T3K Tray
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    LAPIS Semiconductor Co Ltd MSM56V16160K-8T-KNL

    MSM56V16160K-8T-KNL
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    Verical MSM56V16160K-8T-KNL 92 45
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    Quest Components MSM56V16160K-8T-KNL 73
    • 1 $3.315
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    • 100 $2.21
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    OK International MSM56V16160F-8

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    Bristol Electronics MSM56V16160F-8 616
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    OKI Semiconductor MSM56V16160D-8TS

    56V16160D-8TS
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    Quest Components MSM56V16160D-8TS 168
    • 1 $3.15
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    • 100 $1.575
    • 1000 $1.365
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    OKI Semiconductor MSM56V16160F-8TS-K

    SYNCHRONOUS DRAM, 1MX16, 6NS, CMOS, PDSO50
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    Quest Components MSM56V16160F-8TS-K 41
    • 1 $7.5
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    MSM56V16160 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MSM56V16160-10TS-K OKI Semiconductor 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM Scan PDF
    MSM56V16160-10TS-K OKI Semiconductor 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM Scan PDF
    MSM56V16160-12TS-K OKI Semiconductor 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM Scan PDF
    MSM56V16160-12TS-K OKI Semiconductor 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM Scan PDF
    MSM56V16160-15TS-K OKI Semiconductor 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM Scan PDF
    MSM56V16160-15TS-K OKI Semiconductor 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM Scan PDF
    MSM56V16160D OKI Electronic Components 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM Original PDF
    MSM56V16160D-10 OKI Semiconductor 2-Band x 524,288-word x 16-Bit Synchronous Dynamic RAM Scan PDF
    MSM56V16160D-10TS-K OKI Electronic Components 2-bank x 524,288-word x 16-bit cynchronous dynamic RAM Original PDF
    MSM56V16160D-12 OKI Semiconductor 2-Band x 524,288-word x 16-Bit Synchronous Dynamic RAM Scan PDF
    MSM56V16160D-12TS-K OKI Electronic Components 2-bank x 524,288-word x 16-bit cynchronous dynamic RAM Original PDF
    MSM56V16160D-15TS-K OKI Semiconductor 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM Original PDF
    MSM56V16160DH OKI Electronic Components 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM Original PDF
    MSM56V16160DH-15 OKI Semiconductor 2-Band x 524,288-word x 16-Bit Synchronous Dynamic RAM Scan PDF
    MSM56V16160DH-15TS-K OKI Electronic Components 2-bank x 524,288-word x 16-bit cynchronous dynamic RAM Original PDF
    MSM56V16160F OKI Electronic Components 2-Bank x 524,288 Word x 16 Bit SYNCHRONOUS DYNAMIC RAM Original PDF
    MSM56V16160F-10TS-K OKI Electronic Components 2-bank x 524,288-word x 16-bit cynchronous dynamic RAM Original PDF
    MSM56V16160F-8TS-K OKI Electronic Components 2-bank x 524,288-word x 16-bit cynchronous dynamic RAM Original PDF
    MSM56V16160K-8T3-K OKI Electric Industry Memory, Integrated Circuits (ICs), IC SDRAM 16MBIT 125MHZ 50TSOP Original PDF
    MSM56V16160K8T3K Rohm Semiconductor Integrated Circuits (ICs) - Memory - IC DRAM 16M PARALLEL 50TSOP II Original PDF

    MSM56V16160 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    active suspension

    Abstract: MSM56V16160F MSM56V16160F-8 TSOPII50-P-400-0
    Text: This version : Sep.1999 Semiconductor MSM56V16160F 2-Bank ´ 524,288 Word ´ 16 Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank ´ 524,288-word ´ 16 bit Synchronous dynamic RAM, fabricated in OKI’s CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL


    Original     		PDF MSM56V16160F MSM56V16160F 288-word 16bit cycles/64 active suspension MSM56V16160F-8 TSOPII50-P-400-0

    MSM56V16160J

    Abstract: No abstract text available
    Text: FEDD56V16160J-07 OKI Semiconductor MSM56V16160J Issue Date: Oct. 26, 2005 2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160J is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM. The device operates at 3.3V. The inputs and outputs are LVTTL compatible.


    Original     		PDF MSM56V16160J 288-Word 16-Bit FEDD56V16160J-07 MSM56V16160J cycles/64

    MSM56V16160F

    Abstract: active suspension
    Text: FEDD56V16160F-02 1Semiconductor MSM56V16160F This version: March. 2001 Previous version : January. 2001 2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM fabricated in


    Original     		PDF FEDD56V16160F-02 MSM56V16160F 288-Word 16-Bit MSM56V16160F cycles/64ms active suspension

    Untitled

    Abstract: No abstract text available
    Text: IC INFORMATION MSM56V16160F8TKFM 1/1 E Function SDRAM CMOS Type Model AVIC-XD8067ZT Vcc 1 50 Vss DQ1 2 49 DQ16 DQ2 3 48 DQ15 VssQ 4 47 DQ3 5 46 DQ14 DQ4 6 45 DQ13 VccQ 7 DQ5 8 DQ6 9 VssQ 10 DQ7 11 DQ8 12 VccQ 13 38 VccQ LDQM 14 37 NC WE 15 36 UDQM CAS 16 35 CLK


    Original     		PDF MSM56V16160F8TKFM AVIC-XD8067ZT A0-A10

    msm56v16160d-8

    Abstract: cs 3144
    Text: J2G1060-18-X1 作成：1998年10月 ¡ 電子デバイス MSM56V16160D l MSM56V16160D 2-Bankx524,288-Word×16-Bit SYNCHRONOUS DYNAMIC RAM n 概要


    Original     		PDF J2G106018X1 MSM56V16160D MSM56V16160D 288Word 16Bit MSM56V16160DCMOS2 09664ms Latency123 50400milTSOP TSOPII50P4000 msm56v16160d-8 cs 3144

    Untitled

    Abstract: No abstract text available
    Text: FEDD56V16160F-01 1Semiconductor MSM56V16160F This version: January. 2001 Previous version :  2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM fabricated in


    Original     		PDF FEDD56V16160F-01 MSM56V16160F 288-Word 16-Bit MSM56V16160F cycles/64ms

    Untitled

    Abstract: No abstract text available
    Text: FEDD56V16160K-01 Issue Date : Oct. 19, 2010 MSM56V16160K 2-Bankx524,288-Word×16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160K is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM. The device operates at 3.3V. The inputs and outputs are LVTTL compatible.


    Original     		PDF FEDD56V16160K-01 MSM56V16160K 288-Wordà 16-Bit MSM56V16160K 288-word 288Word 16Bit

    MSM56V16160D

    Abstract: MSM56V16160D-10 MSM56V16160D-12 MSM56V16160DH-15
    Text: Pr E2G1049-18-33 el im y 2-Bank ¥ 524,288-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160D/DH is a 2-bank ¥ 524,288-word ¥ 16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The


    Original     		PDF E2G1049-18-33 288-Word 16-Bit MSM56V16160D/DH cycles/64 MSM56V16160D/DH MSM56V16160D MSM56V16160D-10 MSM56V16160D-12 MSM56V16160DH-15

    MSM56V16160F

    Abstract: MSM56V16160F-8 MSM56V16160F-10
    Text: FJDD56V16160F-02 1電子デバイス MSM56V16160F 今回作成：2001 年 2 月 前回作成：2001 年 1 月 2-Bankx524,288-Word×16-Bit SYNCHRONOUS DYNAMIC RAM • 概要 MSM56V16160F はシリコンゲート CMOS プロセス技術により開発された 2 バンク×524,288 ワード


    Original     		PDF FJDD56V16160F-02 MSM56V16160F 288-Word 16-Bit /64ms Latency123 TSOPII50-P-400-0 80-1K MSM56V16160F-xxTS-K MSM56V16160F MSM56V16160F-8 MSM56V16160F-10

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    Untitled

    Abstract: No abstract text available
    Text: SM5921A 8-channel Lip Sync Delay OVERVIEW The SM5921A is an SDRAM controller LSI for audio applications. It stores 64-fs slot 3-wire serial format audio data input at sampling frequency fs in SDRAM, and can access data at an arbitrary address to add a delay


    Original     		PDF SM5921A SM5921A 64-fs Tokyoi104-0032 iC81-3-5541-6501 iC81-3-5541-6510 NC0514DE

    SM5921A

    Abstract: SM5921AF
    Text: SM5921A 8-channel Lip Sync Delay OVERVIEW The SM5921A is an SDRAM controller LSI for audio applications. It stores 64-fs slot 3-wire serial format audio data input at sampling frequency fs in SDRAM, and can access data at an arbitrary address to add a delay


    Original     		PDF SM5921A SM5921A 64-fs NC0514CE SM5921AF

    cecl 080

    Abstract: cn/A/U 237 BG uclip
    Text: To all our customers Information regarding change of names mentioned within this document, to Renesas Technology Corp. On April 1st 2003 the following semiconductor operations were transferred to Renesas Technology Corporation: operations covering microcomputer, logic,


    Original     		PDF HD64413ASFI HD64413ASFD HD64413A cecl 080 cn/A/U 237 BG uclip

    USER S MANUAL oki 32 lcd tv

    Abstract: cecl 080 diode tvr 4j USER MANUAL oki 32 lcd tv spw 068 power supply spw 068 CECL 08c CECL 006 hd64413af B0180
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF HD64413ASF HD64413ASFI HD64413ASFD HD64413A USER S MANUAL oki 32 lcd tv cecl 080 diode tvr 4j USER MANUAL oki 32 lcd tv spw 068 power supply spw 068 CECL 08c CECL 006 hd64413af B0180

    7H67

    Abstract: No abstract text available
    Text: Datasheet Audio 1-Chip SOC BM94801KUT General Description Package The BM94801KUT is a 1-Chip SOC for multimedia audio systems, which supports the Bluetooth A2DP, USB memory, SD memory card, and CD. This IC has a built-in ARM946ES processor, SDRAM, and various peripherals. It is designed to download


    Original     		PDF BM94801KUT BM94801KUT ARM946ES TQFP128UM 7H67

    MSM56V16160J

    Abstract: msm56v16160j-10
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		PDF FJDD56V16160J-10 MSM56V16160J 288-Word 16-Bit /64ms Latency23 MSM56V16160J-xxTS-K TSOPII50-P-400-0 MSM56V16160J-xxT3-K MSM56V16160J msm56v16160j-10

    Untitled

    Abstract: No abstract text available
    Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original     		PDF J2G1038-17-65 MSM56V16160B/BH MSM56V16160B/BH 288-Word 16-Bit MSM56V16160B/BHCMOS2 16RAM3 09664ms Latency123 Latency23

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    MSM56V16160

    Abstract: active suspension BA 596 equivalent TE454
    Text: O K I Semiconductor MSM56V16160 2-Bank x 524,288-W ord x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		PDF MSM56V16160 288-Word 16-Bit MSM56V16160 cycles/64 E4240 active suspension BA 596 equivalent TE454

    56V16160

    Abstract: jl910 LC172 active suspension MSM56V16160
    Text: O K I Semiconductor MSM56V16160 2-B an k x 524,288-W ord x 16-B it SY N C H R O N O U S D Y N A M IC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible.


    OCR Scan     		PDF MSM56V16160 288-Word 16-Bit MSM56V16160 cycles/64 2424G 56V16160 jl910 LC172 active suspension

    09A10

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		PDF MSM56 V16160 288-Word 16-Bit MSM56V16160 cycles/64 09A10

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible.


    OCR Scan     		PDF MSM56 V16160 288-Word 16-Bit MSM56V16160 cles/64

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		PDF MSM56 V16160 288-Word 16-Bit MSM56V16160 cycles/64

    msm514260c

    Abstract: MSM514256C edo 16m x 32
    Text: E2G0004-17-42 Product Overview O K I Semiconductor Product Overview DRAM H H 5V 1M xT~1— I MSM5110OOC/CL H 256K X 4 1— I MSM514256C/CL j 128K X 8 h i MSM518126/L MSM518128/L I 64K X 16 M MSM511664C/CL MSM511666C/CL 2M~~hj 2M X 1 I— I M 3M 512100/T 1M X 2 I— ì MSM512200/L~


    OCR Scan     		PDF E2G0004-17-42 MSM5110OOC/CL MSM514256C/CL MSM518126/L MSM518128/L MSM511664C/CL MSM511666C/CL 512100/T MSM512200/L~ MSM512800C msm514260c MSM514256C edo 16m x 32