MSM56 Search Results

active suspension

Abstract: m56v16 m56v1640010
Contextual Info: O K I Semiconductor MSM56V16400 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400 is a 2-bank x 2,097,152-w ord x 4-bit synchronous dynam ic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and

active suspension

Abstract: 3tr5 ujt transistor MSM56V16800E MSM56V16800E-10 MSM56V16800E-8 transistor mark BA
Contextual Info: E2G1053-18-54 O K I Sem iconductor MSM56V16800E Thisversion:,ul 1998 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800E is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in Oki’s CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and

active suspension

Abstract: MSM56V16160F MSM56V16160F-8 TSOPII50-P-400-0
Contextual Info: This version : Sep.1999 Semiconductor MSM56V16160F 2-Bank ´ 524,288 Word ´ 16 Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank ´ 524,288-word ´ 16 bit Synchronous dynamic RAM, fabricated in OKI’s CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL

MSM56V16160J

Contextual Info: FEDD56V16160J-07 OKI Semiconductor MSM56V16160J Issue Date: Oct. 26, 2005 2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160J is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM. The device operates at 3.3V. The inputs and outputs are LVTTL compatible.

MSM56V16160F

Abstract: active suspension
Contextual Info: FEDD56V16160F-02 1Semiconductor MSM56V16160F This version: March. 2001 Previous version : January. 2001 2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM fabricated in

MSM56V16160

Abstract: active suspension BA 596 equivalent TE454
Contextual Info: O K I Semiconductor MSM56V16160 2-Bank x 524,288-W ord x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and

MSM56V16800D

Abstract: D-10 D-12 MSM56V16800D-10 MSM56V16800D-12 MSM56V16800DH-15
Contextual Info: Pr E2G1047-18-25 el im y 2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800D/DH is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The

Contextual Info: FJDD56V16800F-01 1電子デバイス MSM56V16800F 今回作成：2000 年 11 月 前回作成： 2-Bankx1,048,576-Word×8-Bit SYNCHRONOUS DYNAMIC RAM • 概要 MSM56V16800F はシリコンゲート CMOS プロセス技術により開発された 2 バンク×1,048,576 ワー

Contextual Info: IC INFORMATION MSM56V16160F8TKFM 1/1 E Function SDRAM CMOS Type Model AVIC-XD8067ZT Vcc 1 50 Vss DQ1 2 49 DQ16 DQ2 3 48 DQ15 VssQ 4 47 DQ3 5 46 DQ14 DQ4 6 45 DQ13 VccQ 7 DQ5 8 DQ6 9 VssQ 10 DQ7 11 DQ8 12 VccQ 13 38 VccQ LDQM 14 37 NC WE 15 36 UDQM CAS 16 35 CLK

TSOPII44-P-400-0

Abstract: active suspension MSM56V16800F
Contextual Info: This version : Dec.1999 Semiconductor MSM56V16800F 2-Bank ´ 1,048,576 Word ´ 8 Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800F is a 2-Bank ´ 1,048,576-word ´ 8 bit Synchronous dynamic RAM, fabricated in OKI’s CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL

Contextual Info: O K I Semiconductor MSM56V16400 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and

56V16160

Abstract: jl910 LC172 active suspension MSM56V16160
Contextual Info: O K I Semiconductor MSM56V16160 2-B an k x 524,288-W ord x 16-B it SY N C H R O N O U S D Y N A M IC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible.

MSM56V16800F

Abstract: active suspension
Contextual Info: FEDD56V16800F-01 1Semiconductor MSM56V16800F This version: November. 2000 Previous version :  2-Bank x 1,048,576-Word × 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800F is a 2-Bank × 1,048,576-word × 8-bit Synchronous dynamic RAM fabricated in

msm56v16160d-8

Abstract: cs 3144
Contextual Info: J2G1060-18-X1 作成：1998年10月 ¡ 電子デバイス MSM56V16160D l MSM56V16160D 2-Bankx524,288-Word×16-Bit SYNCHRONOUS DYNAMIC RAM n 概要

Contextual Info: O K I Semiconductor MSM5 6 V16 8 0 0 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800 is a 2-bank x 1,048,576-w ord x 8-bit synchronous dynam ic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and

09A10

Contextual Info: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and

Contextual Info: O K I Semiconductor M S M 5 6 V 1 6 4 0 0 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTIO N The MSM56V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and

Contextual Info: FEDD56V16160K-01 Issue Date : Oct. 19, 2010 MSM56V16160K 2-Bankx524,288-Word×16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160K is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM. The device operates at 3.3V. The inputs and outputs are LVTTL compatible.

MSM56V16800E

Abstract: active suspension MSM56V16800E-10 MSM56V16800E-8
Contextual Info: E2G1053-18-54 This version: Jul. 1998 MSM56V16800E ¡ Semiconductor MSM56V16800E ¡ Semiconductor 2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800E is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated

MSM56V16400D

Abstract: active suspension D-10 D-12 TSOPII44-P-400-0
Contextual Info: Pr E2G1046-18-25 el im y 2-Bank ¥ 2,097,152-Word ¥ 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400D/DH is a 2-bank ¥ 2,097,152-word ¥ 4-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The

Contextual Info: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible.

Contextual Info: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and

Contextual Info: O K I Semiconductor MSM56V16800 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800 is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and

MSM56V16160D

Abstract: MSM56V16160D-10 MSM56V16160D-12 MSM56V16160DH-15
Contextual Info: Pr E2G1049-18-33 el im y 2-Bank ¥ 524,288-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160D/DH is a 2-bank ¥ 524,288-word ¥ 16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The