B75424D Search Results
B75424D Datasheets Context Search
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4 digits 12-segment led displayContextual Info: O K I SEMICONDUCTOR GROUP 23E D • b75424D DODbSSS b O K I semiconductor_ MSC7110-XX/ MSC7112-xx_ 12-SEGMENT, 16-DIGIT/ 16-SEGMENT, 12-DIGIT GENERAL DESCRIPTION The MSC7110-xx and MSC7112-xx are general purpose display controllers for vacuum fluorescent |
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b75424D MSC7110-XX/ MSC7112-xx_ 12-SEGMENT, 16-DIGIT/ 16-SEGMENT, 12-DIGIT MSC7110-xx MSC7112-xx 4 digits 12-segment led display | |
T-46-23-18
Abstract: N-3715 msc23408 msc2340-xxys9
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b72424Ã MSC2340-XXYS9/KS9 MSM514100JS) MSM514100 T-46-23-18 b72424Q msc2340-xxys9/ks9 T-46-23-18 N-3715 msc23408 msc2340-xxys9 | |
MSC2321A-80YS18
Abstract: MSC2331A-10YS18 001035
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b724240 MSC2321A-XXYS18 MSM514256AJS) MSM51C256JS) MSM514256AJS; -xxYS18 RAM-MSC2321A-XXYS18 MSC2321A-80YS18 MSC2331A-10YS18 001035 | |
LED BARGRAPH pin configuration
Abstract: 093S b7am display 16 segments 16-SEGMENT 4 digits 7-segment led display cl
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b7S424D MSC7110-XX/ MSC7112-xx_ 12-SEGMENT, 16-DIG1T/ 16-SEGMENT, 12-DIGIT MSC7110-xx MSC7112-xx LED BARGRAPH pin configuration 093S b7am display 16 segments 16-SEGMENT 4 digits 7-segment led display cl | |
T462 transistor
Abstract: EZ613 transistor t462 MSM51C256 MSM51C256-10 MSM51C256-80 MSM51C256RS
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b72424D MSM51C256 DIP/18 MSM51C256-80 MSM51C25efore T462 transistor EZ613 transistor t462 MSM51C256-10 MSM51C256RS | |
MSM5205RS
Abstract: MSM5218RS OKI 5205 MSM4015 msm5204 MSM5205 csb 384P csb 200 4bit straight adpcm method Analysis on the ADC
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1SM5218_ MSM5218 10-bit 12-bit MSM4094 MSM4015 MSM5218 MSM5205RS MSM5218RS OKI 5205 MSM4015 msm5204 MSM5205 csb 384P csb 200 4bit straight adpcm method Analysis on the ADC | |
Contextual Info: O K I electronic components Q E 3 8 0 7 G _ 1.3 im Edge-Emitting LED FC type Receptacle Module GENERAL DESCRIPTION The OE3807G is a single-mode FC receptacle type module with edge emitting LED. This device is an optimal light sources for fiber LAN's and optical measurement equipments. |
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OE3807G OE38Q7G b75424D 242MQ OE3807G OL38Q7G b724B4D | |
Contextual Info: O K I Semiconductor MSM51V16800_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM51V16800 is OKI's CMOS silicon gate process technology. |
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MSM51V16800_ 152-Word MSM51V16800 cycles/64ms GQ174bt. MSM51V16800 724E4D | |
Contextual Info: E2D0017-27-42 O K I Semiconductor M S M 6652/53/54/55/56-xxx, M SM 6652A/53A/ 54A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx Under development , MSM6650 Internal Mask ROM Voice Synthesis 1C, Internal One-Time-Programmable (OTP) ROM Voice Synthesis 1C, External ROM Drive Voice Synthesis 1C |
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E2D0017-27-42 6652/53/54/55/56-xxx, 652A/53A/ 4A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx MSM6650 MSM6650 MSM6375 theMSM6650familymembersoffer | |
Contextual Info: O K I Semiconductor MSM51V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE T YPE DESCRIPTION The MSM51V16100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit, The technology u sed to fabricate theM SM 51 V16100 is OKI's CM O S silicon gate process technology. |
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MSM51V16100_ 216-Word MSM51V16100 216-w V16100 cycles/64m 7242MQ GD173Ã MSM51V16100 | |
Contextual Info: O K I Semiconductor MSM514265B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : HYPER PAGE MODE TYPE D ESC R IP T IO N T h e M SM 5 1 4 2 6 5 B/BSL is a n e w generation D yn am ic R A M org an ized as 262,144-word x 16-bit configuration. T h e technology used to fabricate the M SM 5 1 4 2 6 5 B/BSL is O K I's C M O S silico n gate process |
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MSM514265B/BSL 144-Word 16-Bit MSM514265B/BSL cycles/128ms | |
OSCILLATOR CIRCUIT BY USING 4047
Abstract: 64X4 MSM6422 COUNTER LED bcd SKIP 14 MD 02 D0137 HF 4047 BE
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2424G MSM6422 MSM6422 b75M2M0 001373e} OSCILLATOR CIRCUIT BY USING 4047 64X4 COUNTER LED bcd SKIP 14 MD 02 D0137 HF 4047 BE | |
OP125
Abstract: OD125
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OP125_ OD125 30-Mbit 30MHz 1300nm b7E424G OD125 b75424D b72424Q OP125 | |
MSM27C101ZB
Abstract: A12-A13-A14 dc/tx/1/2/1257/MSM27C101ZB
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MSM27C101ZB 072-Word f8\TtfATMSM27cVo MSM27C10 MSM27C101ZB 32-Pin DIP32-P-600) OP32-P-525-K) A12-A13-A14 dc/tx/1/2/1257/MSM27C101ZB | |
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Contextual Info: O K I Semiconductor MSM56V16800 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800 is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and |
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MSM56V16800 576-Word MSM56V16800 cycles/64 b75424D 0D204DS | |
"Vacuum Fluorescent Display"
Abstract: MSL918 MSL9 oki Vacuum Fluorescent Display
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b72424Q MSL918 18-pin 18-P-300) 410UT5 "Vacuum Fluorescent Display" MSL9 oki Vacuum Fluorescent Display | |
Contextual Info: 4bE D rtTTT - • b72424D ODD'mûô I T S H O K I J I O K I SEMICONDUCTOR GROUP O K I sem iconductor_ T - V * - Z l ' f MSM51C256_ S 2 6 2 ,1 4 4 W O RD X1-BITS D Y N A M IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. |
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b72424D MSM51C256_ MSM51C256 DIP/18 MSM51C256-80 MSM51C256-10 | |
Contextual Info: 5ÛE D Hi t i T E HS MQ O K I O K I OOlBOSb 40b B O K IJ SE MI CONDUCTOR s e m i c o n d u c t o r G R OU P - r - H ê - z s - is- MSM514102A/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE G EN ER A L DESCRIPTION The MSM514102A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. |
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2424D MSM514102A/AL_ 304-Word MSM514102A/AL 26-pin 20-pin |