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    ROHM Semiconductor MSM56V16160K8T3K

    IC DRAM 16MBIT PAR 50TSOP II
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    DigiKey MSM56V16160K8T3K Tray
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    LAPIS Semiconductor Co Ltd MSM56V16160K-8T-KNL

    MSM56V16160K-8T-KNL
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    Verical MSM56V16160K-8T-KNL 92 45
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    Quest Components MSM56V16160K-8T-KNL 73
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    OK International MSM56V16160F-8

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    Bristol Electronics MSM56V16160F-8 616
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    OKI Semiconductor MSM561RS

    INTEGRATED CIRCUIT
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    Quest Components MSM561RS 225
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    OKI Semiconductor MSM56V16160D-8TS

    56V16160D-8TS
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    Quest Components MSM56V16160D-8TS 168
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    MSM56 Datasheets (54)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MSM56V16160-10TS-K OKI Semiconductor 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM Scan PDF
    MSM56V16160-10TS-K OKI Semiconductor 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM Scan PDF
    MSM56V16160-12TS-K OKI Semiconductor 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM Scan PDF
    MSM56V16160-12TS-K OKI Semiconductor 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM Scan PDF
    MSM56V16160-15TS-K OKI Semiconductor 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM Scan PDF
    MSM56V16160-15TS-K OKI Semiconductor 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM Scan PDF
    MSM56V16160D OKI Electronic Components 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM Original PDF
    MSM56V16160D-10 OKI Semiconductor 2-Band x 524,288-word x 16-Bit Synchronous Dynamic RAM Scan PDF
    MSM56V16160D-10TS-K OKI Electronic Components 2-bank x 524,288-word x 16-bit cynchronous dynamic RAM Original PDF
    MSM56V16160D-12 OKI Semiconductor 2-Band x 524,288-word x 16-Bit Synchronous Dynamic RAM Scan PDF
    MSM56V16160D-12TS-K OKI Electronic Components 2-bank x 524,288-word x 16-bit cynchronous dynamic RAM Original PDF
    MSM56V16160D-15TS-K OKI Semiconductor 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM Original PDF
    MSM56V16160DH OKI Electronic Components 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM Original PDF
    MSM56V16160DH-15 OKI Semiconductor 2-Band x 524,288-word x 16-Bit Synchronous Dynamic RAM Scan PDF
    MSM56V16160DH-15TS-K OKI Electronic Components 2-bank x 524,288-word x 16-bit cynchronous dynamic RAM Original PDF
    MSM56V16160F OKI Electronic Components 2-Bank x 524,288 Word x 16 Bit SYNCHRONOUS DYNAMIC RAM Original PDF
    MSM56V16160F-10TS-K OKI Electronic Components 2-bank x 524,288-word x 16-bit cynchronous dynamic RAM Original PDF
    MSM56V16160F-8TS-K OKI Electronic Components 2-bank x 524,288-word x 16-bit cynchronous dynamic RAM Original PDF
    MSM56V16160K-8T3-K OKI Electric Industry Memory, Integrated Circuits (ICs), IC SDRAM 16MBIT 125MHZ 50TSOP Original PDF
    MSM56V16160K8T3K Rohm Semiconductor Integrated Circuits (ICs) - Memory - IC DRAM 16M PARALLEL 50TSOP II Original PDF

    MSM56 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    active suspension

    Abstract: MSM56V16160F MSM56V16160F-8 TSOPII50-P-400-0
    Text: This version : Sep.1999 Semiconductor MSM56V16160F 2-Bank ´ 524,288 Word ´ 16 Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank ´ 524,288-word ´ 16 bit Synchronous dynamic RAM, fabricated in OKI’s CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL


    Original     		PDF MSM56V16160F MSM56V16160F 288-word 16bit cycles/64 active suspension MSM56V16160F-8 TSOPII50-P-400-0

    MSM56V16160J

    Abstract: No abstract text available
    Text: FEDD56V16160J-07 OKI Semiconductor MSM56V16160J Issue Date: Oct. 26, 2005 2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160J is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM. The device operates at 3.3V. The inputs and outputs are LVTTL compatible.


    Original     		PDF MSM56V16160J 288-Word 16-Bit FEDD56V16160J-07 MSM56V16160J cycles/64

    MSM56V16160F

    Abstract: active suspension
    Text: FEDD56V16160F-02 1Semiconductor MSM56V16160F This version: March. 2001 Previous version : January. 2001 2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM fabricated in


    Original     		PDF FEDD56V16160F-02 MSM56V16160F 288-Word 16-Bit MSM56V16160F cycles/64ms active suspension

    MSM56V16800D

    Abstract: D-10 D-12 MSM56V16800D-10 MSM56V16800D-12 MSM56V16800DH-15
    Text: Pr E2G1047-18-25 el im y 2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800D/DH is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The


    Original     		PDF E2G1047-18-25 576-Word MSM56V16800D/DH cycles/64 MSM56V16800D/DH TSOPII44-P-400-0 MSM56V16800D D-10 D-12 MSM56V16800D-10 MSM56V16800D-12 MSM56V16800DH-15

    Untitled

    Abstract: No abstract text available
    Text: FJDD56V16800F-01 1電子デバイス MSM56V16800F 今回作成：2000 年 11 月 前回作成： 2-Bankx1,048,576-Word×8-Bit SYNCHRONOUS DYNAMIC RAM • 概要 MSM56V16800F はシリコンゲート CMOS プロセス技術により開発された 2 バンク×1,048,576 ワー


    Original     		PDF FJDD56V16800F-01 MSM56V16800F 576-Word /64ms Latency123 TSOPII44-P-400-0 80-1K MSM56V16800F-xxTS-K MSM56V16800F-8A

    Untitled

    Abstract: No abstract text available
    Text: IC INFORMATION MSM56V16160F8TKFM 1/1 E Function SDRAM CMOS Type Model AVIC-XD8067ZT Vcc 1 50 Vss DQ1 2 49 DQ16 DQ2 3 48 DQ15 VssQ 4 47 DQ3 5 46 DQ14 DQ4 6 45 DQ13 VccQ 7 DQ5 8 DQ6 9 VssQ 10 DQ7 11 DQ8 12 VccQ 13 38 VccQ LDQM 14 37 NC WE 15 36 UDQM CAS 16 35 CLK


    Original     		PDF MSM56V16160F8TKFM AVIC-XD8067ZT A0-A10

    TSOPII44-P-400-0

    Abstract: active suspension MSM56V16800F
    Text: This version : Dec.1999 Semiconductor MSM56V16800F 2-Bank ´ 1,048,576 Word ´ 8 Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800F is a 2-Bank ´ 1,048,576-word ´ 8 bit Synchronous dynamic RAM, fabricated in OKI’s CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL


    Original     		PDF MSM56V16800F MSM56V16800F 576-word cycles/64 TSOPII44-P-400-0 active suspension

    MSM56V16800F

    Abstract: active suspension
    Text: FEDD56V16800F-01 1Semiconductor MSM56V16800F This version: November. 2000 Previous version :  2-Bank x 1,048,576-Word × 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800F is a 2-Bank × 1,048,576-word × 8-bit Synchronous dynamic RAM fabricated in


    Original     		PDF FEDD56V16800F-01 MSM56V16800F 576-Word MSM56V16800F cycles/64ms active suspension

    msm56v16160d-8

    Abstract: cs 3144
    Text: J2G1060-18-X1 作成：1998年10月 ¡ 電子デバイス MSM56V16160D l MSM56V16160D 2-Bankx524,288-Word×16-Bit SYNCHRONOUS DYNAMIC RAM n 概要


    Original     		PDF J2G106018X1 MSM56V16160D MSM56V16160D 288Word 16Bit MSM56V16160DCMOS2 09664ms Latency123 50400milTSOP TSOPII50P4000 msm56v16160d-8 cs 3144

    Untitled

    Abstract: No abstract text available
    Text: FEDD56V16160F-01 1Semiconductor MSM56V16160F This version: January. 2001 Previous version :  2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM fabricated in


    Original     		PDF FEDD56V16160F-01 MSM56V16160F 288-Word 16-Bit MSM56V16160F cycles/64ms

    Untitled

    Abstract: No abstract text available
    Text: FEDD56V16160K-01 Issue Date : Oct. 19, 2010 MSM56V16160K 2-Bankx524,288-Word×16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160K is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM. The device operates at 3.3V. The inputs and outputs are LVTTL compatible.


    Original     		PDF FEDD56V16160K-01 MSM56V16160K 288-Wordà 16-Bit MSM56V16160K 288-word 288Word 16Bit

    MSM56V16800E

    Abstract: active suspension MSM56V16800E-10 MSM56V16800E-8
    Text: E2G1053-18-54 This version: Jul. 1998 MSM56V16800E ¡ Semiconductor MSM56V16800E ¡ Semiconductor 2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800E is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated


    Original     		PDF E2G1053-18-54 MSM56V16800E 576-Word MSM56V16800E cycles/64 TSOPII44-P-400-0 active suspension MSM56V16800E-10 MSM56V16800E-8

    MSM56V16400D

    Abstract: active suspension D-10 D-12 TSOPII44-P-400-0
    Text: Pr E2G1046-18-25 el im y 2-Bank ¥ 2,097,152-Word ¥ 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400D/DH is a 2-bank ¥ 2,097,152-word ¥ 4-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The


    Original     		PDF E2G1046-18-25 152-Word MSM56V16400D/DH cycles/64 MSM56V16400D/DH TSOPII44-P-400-0 MSM56V16400D active suspension D-10 D-12

    MSM56V16160D

    Abstract: MSM56V16160D-10 MSM56V16160D-12 MSM56V16160DH-15
    Text: Pr E2G1049-18-33 el im y 2-Bank ¥ 524,288-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160D/DH is a 2-bank ¥ 524,288-word ¥ 16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The


    Original     		PDF E2G1049-18-33 288-Word 16-Bit MSM56V16160D/DH cycles/64 MSM56V16160D/DH MSM56V16160D MSM56V16160D-10 MSM56V16160D-12 MSM56V16160DH-15

    active suspension

    Abstract: 3tr5 ujt transistor MSM56V16800E MSM56V16800E-10 MSM56V16800E-8 transistor mark BA
    Text: E2G1053-18-54 O K I Sem iconductor MSM56V16800E Thisversion:,ul 1998 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800E is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in Oki’s CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		PDF E2G1053-18-54 MSM56V16800E 576-Word MSM56V16800E cycles/64 active suspension 3tr5 ujt transistor MSM56V16800E-10 MSM56V16800E-8 transistor mark BA

    MSM56V16160

    Abstract: active suspension BA 596 equivalent TE454
    Text: O K I Semiconductor MSM56V16160 2-Bank x 524,288-W ord x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		PDF MSM56V16160 288-Word 16-Bit MSM56V16160 cycles/64 E4240 active suspension BA 596 equivalent TE454

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM56V16400 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		PDF MSM56V16400 152-Word MSM56V16400 cycles/64 DD2D377

    56V16160

    Abstract: jl910 LC172 active suspension MSM56V16160
    Text: O K I Semiconductor MSM56V16160 2-B an k x 524,288-W ord x 16-B it SY N C H R O N O U S D Y N A M IC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible.


    OCR Scan     		PDF MSM56V16160 288-Word 16-Bit MSM56V16160 cycles/64 2424G 56V16160 jl910 LC172 active suspension

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 6 V16 8 0 0 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800 is a 2-bank x 1,048,576-w ord x 8-bit synchronous dynam ic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		PDF 576-Word MSM56V16800 576-w cycles/64

    09A10

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		PDF MSM56 V16160 288-Word 16-Bit MSM56V16160 cycles/64 09A10

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor M S M 5 6 V 1 6 4 0 0 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTIO N The MSM56V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		PDF 152-Word MSM56V16400 cycles/64

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible.


    OCR Scan     		PDF MSM56 V16160 288-Word 16-Bit MSM56V16160 cles/64

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		PDF MSM56 V16160 288-Word 16-Bit MSM56V16160 cycles/64

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM56V16800 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800 is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		PDF MSM56V16800 576-Word MSM56V16800 cycles/64 b75424D 0D204DS