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    16160B Search Results

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    16160B Price and Stock

    Integrated Silicon Solution Inc IS43DR16160B-37CBL

    IC DRAM 256MBIT PAR 84TWBGA
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    DigiKey IS43DR16160B-37CBL Tray 3,150 1
    • 1 $3.35
    • 10 $2.974
    • 100 $2.768
    • 1000 $2.48751
    • 10000 $2.48751
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    Avnet Americas IS43DR16160B-37CBL Tray 10 Weeks 418
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    • 1000 $2.34223
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    Mouser Electronics IS43DR16160B-37CBL 1,112
    • 1 $3.35
    • 10 $2.77
    • 100 $2.77
    • 1000 $2.48
    • 10000 $2.48
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    Newark IS43DR16160B-37CBL Bulk 1
    • 1 $3.48
    • 10 $3.09
    • 100 $2.76
    • 1000 $2.59
    • 10000 $2.59
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    Avnet Silica IS43DR16160B-37CBL 14 Weeks 209
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    Integrated Silicon Solution Inc IS43DR16160B-37CBLI

    IC DRAM 256MBIT PAR 84TWBGA
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    DigiKey IS43DR16160B-37CBLI Tray 254 1
    • 1 $4.69
    • 10 $4.162
    • 100 $3.8745
    • 1000 $3.35939
    • 10000 $3.27125
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    Mouser Electronics IS43DR16160B-37CBLI 125
    • 1 $4.67
    • 10 $3.88
    • 100 $3.87
    • 1000 $3.35
    • 10000 $3.27
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    Avnet Silica IS43DR16160B-37CBLI 14 Weeks 209
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    Integrated Silicon Solution Inc IS43LD16160B-25BLI

    IC DRAM 256MBIT PAR 134TFBGA
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    DigiKey IS43LD16160B-25BLI Tray 134 1
    • 1 $6.38
    • 10 $5.67
    • 100 $5.09188
    • 1000 $4.47886
    • 10000 $4.47886
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    Mouser Electronics IS43LD16160B-25BLI
    • 1 $6.38
    • 10 $5.67
    • 100 $5.1
    • 1000 $4.47
    • 10000 $4.47
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    Avnet Silica IS43LD16160B-25BLI 14 Weeks 171
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    Integrated Silicon Solution Inc IS43R16160B-6TL

    IC DRAM 256MBIT PAR 66TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IS43R16160B-6TL Tray 216
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    • 1000 $4.84495
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    Integrated Silicon Solution Inc IS42S16160B-7BL

    IC DRAM 256MBIT PAR 54LFBGA
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    DigiKey IS42S16160B-7BL Tray
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    Newark IS42S16160B-7BL Bulk 240
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    16160B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MTG-16160B

    Abstract: 160X160 display
    Text: MTG-16160B GENERAL SPECIFICATION Item INTERFACE PIN ASSIGNMENT Content Number of Character Pin No. Pin Out Module Size 89.2 W x85.0(H)x10.4/14.4(D)mm Max Viewing Area 62.0(W)x62.0(H)mm Dot Size/Dot Pitch 0.34(W)x0.34(H)mm/0.38(W)x0.38(H)mm Backlight Without/EL/LED


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    PDF MTG-16160B 160x160 00V/400Hz 500mA MTG-16160B 160X160 display

    Untitled

    Abstract: No abstract text available
    Text: Barrier Block Accessories Fanning Strips Catalog Numbers and Dimensions for Fanning Strips for 140 Series Terminal Blocks Straight Type Dimensions Catalog No. 6-160B-R Catalog No. 6-160-R Ordering Information No. of Terminals 2 3 4 5 6 7 8 9 10 11 12 13 14


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    PDF 6-160B-R 6-160-R 2-160-R 3-160-R 4-160-R 5-160-R 7-160-R 8-160-R 9-160-R

    DC-37PTI

    Abstract: ms24266r bacc63bn LGA 478 SOCKET PIN LAYOUT 94v-0 lcd display BACC45 BACC63CB bacc10gh BACC63BV MIL-C-27500
    Text: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.


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    PDF C-865 UT-304 FCT-551 FCT-552 DC-37PTI ms24266r bacc63bn LGA 478 SOCKET PIN LAYOUT 94v-0 lcd display BACC45 BACC63CB bacc10gh BACC63BV MIL-C-27500

    5-176-3 terminal block

    Abstract: mini circuits 15542 MS14141 DIN 18541 8-32X3 s31512 mini 15542 P-306-CCE 5-140-Y E61245
    Text: COMMERCIAL Barrier Blocks Circular Mini DIN BNC Jones Plugs Edge Connectors Commercial [.050” 1.27mm Density Solder Introduction Cup/Wire D-Microminiature] Cinch Commercial Products, consisting of Jones Plugs and Sockets, Barrier Blocks, Edge Cards, Two-Piece Commercial Dins,


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    DIN 41529

    Abstract: bacc10 MIL-C-83513 connector BACC45FT BACC10GH BACC45FN S2402D PTI 30 040 ga BACC45FM cd 1191 acb
    Text: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.


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    PDF C-865 UT-304 FCT-551 FCT-552 DIN 41529 bacc10 MIL-C-83513 connector BACC45FT BACC10GH BACC45FN S2402D PTI 30 040 ga BACC45FM cd 1191 acb

    BACC63CB

    Abstract: bacc63bv m32029 BACC45 BACC45FT M22759/33-26-9 BACC45FN BACC63BP MIL-C-39029/31 Cinch Connectors bacc45ft
    Text: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.


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    PDF C-865 UT-304 FCT-551 FCT-552 BACC63CB bacc63bv m32029 BACC45 BACC45FT M22759/33-26-9 BACC45FN BACC63BP MIL-C-39029/31 Cinch Connectors bacc45ft

    Untitled

    Abstract: No abstract text available
    Text: DURA-CON Barrier Blocks High Reliability Accessories All-Plastic Solder Terminals 3/4W, Y, and W Optional Terminals for use with Cinch terminal blocks. See chart for type and dimensions. Below 2 Ordering Information "3/4 W" Terminals - Dimensions Catalog


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    PDF 3/4W-140 3/4W-141 3/4W-142

    mini circuits 15542

    Abstract: chocolate vending machine 16161L mdc-8p13 25541 DIN 18541 MSX-10 302-RP 50-12SN-3 Cinch fanning strip 10-160b-r
    Text: COMMERCIAL Barrier Blocks Circular Mini DIN BNC Jones Plugs Edge Connectors Commercial [.050” 1.27mm Density Solder Introduction Cup/Wire D-Microminiature] Cinch Commercial Products, consisting of Jones Plugs and Sockets, Barrier Blocks, Edge Cards, Two-Piece Commercial Dins,


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    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD Description Features The GM71C S 16160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C(S)16160B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process tech n o lo gy. The


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    PDF GM71C 16160B/BL 42SOJ GGQ4C544

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description Features The GM71V S 16160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71V(S)16160B/BL has realized higher density, higher performance and various functions by utilizing a d v an ced CM OS pr oc e s s t e c hnol ogy. The


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    PDF 16160B/BL GM71V

    phc51

    Abstract: A0317
    Text: HYUNDAI H Y 5 1 V 1 6 1 6 0 B S e r ie s 1 M x 16-bit CMOS DRAM with 2ÜÄ5 DESCRIPTION T he H Y51V 16160B is th e new generation and fa st dynam ic RAM organized 1,048,576 x 16-bit. The 16160B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques


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    PDF 16-bit 16160B 16-bit. HY51V16160B 42/42pin D55-10-MA HY51V16160BJC 616CIBSIJC phc51 A0317

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY51V18160B,HY51 V 16160B 1Mx16, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


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    PDF HY51V18160B 16160B 1Mx16, 16-bit 1Mx16

    Untitled

    Abstract: No abstract text available
    Text: DRAM 6 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V±0.3V, T a=0°C Organization (Wxb) Access Time max. (ns) Part Number Power Consumption max. (mW) Cycle Time min. (ns) M B81V 16 160 A -60 60[15]*1 1 10[40]"3 324 M B81V 16 160 A -70 70(17]*1 130[45]*3


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    PDF 0A-60L 8160A B81V16160B-50 B81V16160B-60 16160B-50L 16160B-60L 18160B-50 B81V1816CB-60 B-50L

    SIEMENS tle 420

    Abstract: ic 7014
    Text: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 16160BSJ-50/-60/-70 HYB 3118160BSJ-50/-60/-70 Advanced Inform ation I 048 576 words by 16-bit organization 0 to 70 C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)


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    PDF 16-Bit 3116160BSJ-50/-60/-70 3118160BSJ-50/-60/-70 HYB3118160BSJ-50) HYB3118160BSJ-60) HYB3118160BSJ-70) HYB3116160BSJ-50) SIEMENS tle 420 ic 7014

    Untitled

    Abstract: No abstract text available
    Text: 16160B Series HM51W18160B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-538 Z Preliminary Rev. 0.0 Mar. 11, 1996 Description The Hitachi 16160B Series, HM51W18160B Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology


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    PDF HM51W16160B HM51W18160B 1048576-word 16-bit ADE-203-538 576-word 16-bit.

    BEDO RAM

    Abstract: hy5118160b HY512264 HY5117404 HY5118164B
    Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE


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    PDF HY531000A. HY534256A. 16-bit. HY5216257. x16-bit. DB101-20-MAY95 BEDO RAM hy5118160b HY512264 HY5117404 HY5118164B

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70


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    PDF 1000BJ-50 1000BJ-60 1000BJ-70 1000BJL-50 1000BJL-60 1000BJL-70 514256B-50 514256B-60 514256B-70 514256BJ-50

    5117400

    Abstract: sem 2500 7212 tube
    Text: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1


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    PDF P-SOJ-26/20-1 J-26/20-5? P-SOJ-28-2 P-SOJ-40-1 P-TSOPII-26/20-1 P-SOJ-26/24-1 1000BJ 514256BJ 514100BJ 514400BJ 5117400 sem 2500 7212 tube

    Untitled

    Abstract: No abstract text available
    Text: •H YU N D AI H Y 5 1 V 1 8 1 6 0 B .H Y 5 1 V 1 6 1 6 0 B 1M x16, F as t Page m ode DESCRIPTION T h is fa m ily is a 16M bit d y n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 1 6 -b it c o n fig u ra tio n w ith Fast Page m od e C M O S D R A M s. Fast Page m ode is a kind o f pa ge m ode w h ich is use ful fo r th e read o p e ra tio n . T h e c irc u it and pro ce ss d e sig n a llo w th is


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    PDF HY51V18160B V16160B 1Mx16, 16-bit A0-A11) DQ0-DQ15)

    STT 3 SIEMENS

    Abstract: No abstract text available
    Text: SIEM ENS 1 M X 1 6 -B it D y n a m ic R A M 4 k -R e fre s h H Y B 5 1 1 6 1 6 0 B S J -5 0 /-6 0 /-7 0 Advanced Inform ation • • • • • 1 048 576 words by 16-bit organization 0 to 70 'C operating temperature Fast access and cycle tim e RAS access time:


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    PDF 16-Bit 5116160BSJ-50/-60/-70 //////////////////////////7Z7777> I/01-I/016 023StiDS STT 3 SIEMENS

    44e 402

    Abstract: No abstract text available
    Text: SIEMENS 1M X 16-Bit Dynamic RAM 4k-Refresh HYB 16160BSJ-50/-60/-70 Advanced Inform ation • • • • • 1 048 576 w ords by 16-bit organization 0 to 70 'C operating tem perature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)


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    PDF 16-Bit 5116160BSJ-50/-60/-70 44e 402

    7805B

    Abstract: hyb 511
    Text: SIEM ENS Contents Page In tr o d u c tio n . 8 S u m m a ry o f T y p e s incl. ordering c o d e s . 9


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