MSM51V17805
Abstract: MSM51V17805DSL
Text: E2G0129-17-61 O K I Semiconductor MSM51V17805D/DSL 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51V17805D/DSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805D/DSL achieves high integration, high-speed operation,
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E2G0129-17-61
MSM51V17805D/DSL
152-Word
MSM51VI7805D
MSM51V17805D/DSL
28-pin
MSM51V17805DSL
MSM51V17805
MSM51V17805DSL
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MSM51V18165BSL
Abstract: S0j42-P-400-127 msm51v18165b
Text: O K I Semiconductor MSM5 1V18 1 65B/BSL_ E2G 0087-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V18165B/BSL is a 1,048,576-word x 16-bit dynamic RAMfabricated in Oki's silicon-gate CMOS technology. The MSM51V18165B/BSL achieves high integration, high-speed operation, and
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E2G0087-17-41
MSM51V18165B/BSL_
576-Word
16-Bit
TheMSM51
V18165B/BSL
MSM51V18165B/BSL
MSM51V18165BSL
S0j42-P-400-127
msm51v18165b
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transistor sl 431
Abstract: ZIP40-P-475
Text: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM51419 0 /SL is OKI's CMOS silicon gate process technology.
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MSM514190/SL_
144-Word
18-Bit
MSM514190/SL
theMSM514190/SL
cycles/16ms,
transistor sl 431
ZIP40-P-475
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MSM5118165B
Abstract: TSOP 86 Package
Text: O K I Semiconductor MSM5118165B_ E2G 0055-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM5118165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5118165B achieves high integration, high-speed operation, and low-power
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E2G0055-17-41
MSM5118165B_
576-Word
16-Bit
TheMSM5118165B
MSM5118165B
42-pin
TSOP 86 Package
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PDF
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V1640
Abstract: MSM51V16405D MSM51V16405DSL
Text: E2G0124-17-61 O K I Semiconductor MSM5 1V1 6 4 0 5 P/PSL 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V16405D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16405D/DSL achieves high integration, high-speed operation,
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E2G0124-17-61
MSM51V16405P
MSM51V16405PSL
304-Word
TheMSM51
V16405D/DSL
MSM51V16405D/DSL
MSM51V16405D
/24-pin
V1640
MSM51V16405DSL
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Untitled
Abstract: No abstract text available
Text: E2G0133-17-61 O K I Semiconductor M S M 5 1 V 1 8 1 6 5 D / D This version: Mar. 1998 S L 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V18165D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. TheMSM51 V18165D/DSL achieves high integration, high-speed operation,
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E2G0133-17-61
576-Word
16-Bit
MSM51V18165D/DSL
TheMSM51
V18165D/DSL
42-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5116160B_ E2G 0049-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM5116160B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5116160B achieves high integration, high-speed operation, and low-power
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MSM5116160B_
576-Word
16-Bit
TheMSM5116160B
MSM5116160B
42-pin
50/44-pin
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Untitled
Abstract: No abstract text available
Text: OKI Semiconductor MSM5118160B_ E2G 0051-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM5118160B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5118160B achieves high integration, high-speed operation, and low-power
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MSM5118160B_
576-Word
16-Bit
TheMSM5118160B
MSM5118160B
42-pin
50/44-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: E2G0122-17-61 O K I Semiconductor Thisversion:^ 1998 MSM51V16400D/DSL_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V16400D/DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16400D/DSL achieves high integration, high-speed operation,
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E2G0122-17-61
MSM51V16400D/DSL_
304-Word
TheMSM51
V16400D/DSL
MSM51V16400D/DSL
MSM51V16400D
a26/24-pin
26/24-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 4 1 90/SL_ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM514190/SL is OKI's CMOS silicon gate process technology.
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90/SL_
144-Word
18-Bit
MSM514190/SL
theMSM514190/SL
cycles/16ms,
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V17170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V17170 is a 1,048,576-word x 16-bit dynamic RAM fabricated inOKI'sCMOS silicon gate technology. The MSM51V17170 achieves high integration, high-speed operation, and low-power
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MSM51V17170
576-Word
16-Bit
TheMSM51
V17170
MSM51V17170
42-pin
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TSOP 86 Package
Abstract: msm5116165b
Text: O K I Semiconductor MSM5116 16 5 B_ E 2 G 0 0 5 3 - 1 7 -4 1 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM5116165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5116165B achieves high integration, high-speed operation, and low-power
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MSM5116165B
576-Word
16-Bit
TheMSM5116165B
MSM5116165B
42-pin
50/44-pin
TSOP 86 Package
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PDF
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MSM51V18165DSL
Abstract: No abstract text available
Text: E2G0133-17-61 O K I Semiconductor MSM5 1VI8 1 65 P/PSL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESC R IPTIO N The MSM51V18165D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon gate CMOS technology. TheMSM51 V18165D/DSL achieves high integration, high-speed operation,
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E2G0133-17-61
MSM51VI8165P/PSL
576-Word
16-Bit
MSM51V18165D/DSL
TheMSM51
V18165D/DSL
MSM51V18165DSL
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5116 16 0 B_ E2G 0049-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM5116160B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5116160B achieves high integration, high-speed operation, and low-power
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OCR Scan
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E2G0049-17-41
MSM5116160B_
576-Word
16-Bit
TheMSM5116160B
MSM5116160B
42-pin
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Untitled
Abstract: No abstract text available
Text: A O K I Semiconductor MSM51V41OO/L/S L 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V 4100/L/SL is a4,194,304-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V4100/L/SL achieves high integration, high-speed operation, and
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MSM51V41OO/L/S
304-Word
TheMSM51
4100/L/SL
MSM51V4100/L/SL
MSM51V4100/L/
26/20-pin
MSM51V4100L
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V17160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51V17160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17160 achieves high integration, high-speed operation, and low-power
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MSM51
V17160
576-Word
16-Bit
TheMSM51V17160
MSM51V17160
42-pin
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51c464
Abstract: MSM51C464A MSM51C464A-10 ZIP20-P-400
Text: O K I Semiconductor MSM51C464A G5,536-Word x 4 'B it D Y N A M IC RA M DESCRIPTION The MSM51C464A is a new generation dynamic R A M organized as 65,536-woid x. 4-bit The technology used to fabricate theMSM51C464A is O K I's C M O S silicon gate process technology. The
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MSM51C464A
MSM52C464A
536-word
lC464A
18-Pin
300mil
MSM51G464A
51c464
MSM51C464A
MSM51C464A-10
ZIP20-P-400
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5116160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM5116160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160A achieves high integration, high-speed operation, and low-power
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MSM5116160A
576-Word
16-Bit
TheMSM5116160A
MSM5116160A
42-pin
50/44-pin
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MAS 10 RCD
Abstract: 001T MSM51V1000A MSM51V1000A-10 MSM51V1000A-70 MSM51V1000A-80 ZIP20-P-400 IRC130
Text: O K I Semiconductor MSM51V1000A 1,048,576-Word x 1-Bit DYN A M IC RAM : FAST PAGE M O DE TYPE DESCRIPTION TheMSM51V1000A is a 1,048,576-word x 1-bit dynamic RAM fabricated inOKI'sCMOSsilicon gate technology. The MSM51V1000A achieves high integration, high-speed operation, and low-power
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MSM51V1000A_
576-Word
MSM51V1000A
26/20-pin
20-pin
b754EHD
MAS 10 RCD
001T
MSM51V1000A-10
MSM51V1000A-70
MSM51V1000A-80
ZIP20-P-400
IRC130
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PDF
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MSM5118160B
Abstract: No abstract text available
Text: OKI Semiconductor MSM5118160B_ E2G 0051-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM5118160B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5118160B achieves high integration, high-speed operation, and low-power
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OCR Scan
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E2G0051-17-41
MSM5118160B_
576-Word
16-Bit
TheMSM5118160B
MSM5118160B
42-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1V18 1 65B/BSL_ E2G 0087-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM51 V18165B/BSL is a 1,048,576-word x 16-bit dynamic RAMfabricated in Oki's silicon-gate CMOS technology. The M SM 51V18165B/BSL achieves high integration, high-speed operation, and
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65B/BSL_
576-Word
16-Bit
TheMSM51
V18165B/BSL
51V18165B/BSL
42-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V16160 B/B8 L E 2 G 0 0 8 1 -17-41 1,048,576-Word x 16-Bit D YN A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V I6160B / BSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. TheMSM51 V I6160B/BSL achieves high integration, high-speed operation, and
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MSM51
V16160
576-Word
16-Bit
MSM51V
I6160B
TheMSM51
I6160B/BSL
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V17160_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V17160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17160 achieves high integration, high-speed operation, and low-power
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OCR Scan
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MSM51V17160
576-Word
16-Bit
TheMSM51
V17160
MSM51V17160
TheMSM51V17160
42-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5118160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM5118160Aisa 1,048,576-word xl6-bitdynam ie RAM fabricated in OKI's CMOS silicon gate technology. The MSM5118160A achieves high integration, high-speed operation, and low-power
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MSM5118160A
576-Word
16-Bit
TheMSM5118160Aisa
MSM5118160A
42-pin
/44-pin
576-w
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PDF
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