MSM5116 Search Results

MSM5116800C

Contextual Info: Pr E2G0110-18-42 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116800C is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116800C achieves high integration, high-speed operation, and low-power

MSM5116160

Abstract: dq8e N4409
Contextual Info: O K I Semiconductor MSM5116160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low -pow er

Contextual Info: O K I Semiconductor MSM5116170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116170 achieves high integration, high-speed operation, and low-power

MSM5116400C

Contextual Info: E 2 G 0 1 06-18-42 V $ \ O K I S e m ic o n d u c to r ^ve^on^.i*«^ M SM 5 1 1 6 4 0 0 C_ 4,194,304-W ord x 4 -B it D Y N A M IC R A M : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

m51164

Abstract: MSM5116405A M5116405
Contextual Info: Um O K I Semiconductor MSM5 1 16405 A 4,194,304-Word x 4-Bit DYN A M IC RAM : FAST PAGE M O D E TYPE W ITH EDO DESCRIPTION The MSM5116405A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116405A achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5116160A_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCRIPTIO N The MSM5116160A is a 1,048,576-word x 16-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160A achieves high integration, high-speed operation, and low-power

MSM5116805A

Contextual Info: O K I Semiconductor MSM5 1 1 6 8 0 5 A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5116805A is a2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116805A achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.

MSM5116180-70

Abstract: MSM5116180-80
Contextual Info: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.

MSM511665-10

Abstract: MSM511665-80
Contextual Info: 5ÔE D O K I m b754240 0012^40 SEMICONDUCTOR 3^7 « O K I J GROUP O K I sem iconductor M SM 511665 z^s-H 65,536-W O R D x 16-BIT DYN A M IC RAM GENERAL DESCRIPTION The M SM511665 is a new generation dynamic RAM organized as 65,536 words x 16 bits. The technology used to fabricate the MSM511665 is OKI's CMOS silicon gate process technology.

Bv 42 transistor

Abstract: tsop50 42-PIN MSM5116190-70 MSM5116190-80
Contextual Info: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.

MSM5116800A

Contextual Info: O K I Sem iconductor MSM5 1 1 6 8 0 0 A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPT IO N The MSM5116800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116800A achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5116170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116170 achieves high integration, high-speed operation, and low-power

24-P-3001

Abstract: MSM5116400
Contextual Info: J2G0106-18-42 作成：1998年 4月 ¡ 電子デバイス MSM5116400C l MSM5116400C 暫定 4,194,304-Wordx4-Bit DYNAMIC RAM：高速ページモード n 概要 MSM5116400CはCMOSプロセス技術を用いた4,194,304ワ−ド×4ビット構成のダイナミックランダム

SOJ42-P-400-1

Abstract: MSM5116160F
Contextual Info: FEDD5116160F-02 1Semiconductor MSM5116160F This version: August. 2002 Previous version : Sep.2001 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

Contextual Info: O K I Semiconductor MSM5116800_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM5116800 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM5 116 4 0 0 B_ E2G0033-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400B achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5116160B_ E2G 0049-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION MSM5116160B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5116160B achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5 116800A 2,097,152-Word x 8-Bit DYNAMIC RAM : FA ST PA G E M ODE T Y P E DESCRIPTION The MSM5116800A is a2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116800A achieves high integration, high-speed operation, and low-power

DRAMs

Abstract: MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c
Contextual Info: OKI Semiconductor DRAMs 1-Meg DRAMs 5 V Part Number Description Organization Pins / Package Access Time Max (ns) MSM511664B-xx Fast page 64K x 16 40 / DIP 70, 80 MSM514256C-xx Fast page 256K x 4 60, 70, 80 MSM514256CL-xx Fast page, low-power 20 / DIP, ZIP

MSM5116400C

Abstract: l1017
Contextual Info: Pr E2G0106-18-42 el im y 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400C is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400C achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5116160 B_ E 2 G 0 0 4 9 -17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160B is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The M SM5116160B achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor E2G0033-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400B achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5116800A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FA ST P A G E MODE T Y P E DESCRIPTION The MSM5116800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116800A achieves high integration, high-speed operation, and low-power