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    STB55NE06 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STB55NE06 STMicroelectronics N - CHANNEL ENHANCEMENT MODE - SINGLE FEATURE SIZE - POWER MOSFET Original PDF
    STB55NE06 STMicroelectronics N-CHANNEL 60V - 0.19 ? - 55A D2PAK STRIPFET POW Original PDF
    STB55NE06 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STB55NE06L STMicroelectronics N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Original PDF
    STB55NE06L STMicroelectronics N-CHANNEL 60V - 0.018 ? - 55A D2PAK SRIPFET POW Original PDF
    STB55NE06L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STB55NE06T4 STMicroelectronics N-Channel 60 V - 0.19 ohm - 55 A D2PAK STripFETPower MOSFET Original PDF

    STB55NE06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    355a transistor

    Abstract: mosfet 355a STB55NE06L
    Text: STB55NE06L N-CHANNEL 60V - 0.18 Ω - 55A D2PAK STripFET POWER MOSFET TYPE STB55NE06L • ■ ■ ■ ■ ■ ■ V DSS RDS on ID 60 V <0.022 Ω 55 A TYPICAL RDS(on) = 0.018Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC


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    PDF STB55NE06L O-263 355a transistor mosfet 355a STB55NE06L

    B55NE06

    Abstract: STB55NE06 55ao s30120
    Text: STB55NE06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST B55NE06 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.022 Ω 55 A TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC


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    PDF STB55NE06 B55NE06 O-26rights B55NE06 STB55NE06 55ao s30120

    STB55NE06L

    Abstract: No abstract text available
    Text: STB55NE06L N-CHANNEL 60V - 0.18 Ω - 55A D2PAK STripFET POWER MOSFET TYPE STB55NE06L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 60 V <0.022 Ω 55 A TYPICAL RDS(on) = 0.018Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dv/dt CAPABILITY


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    PDF STB55NE06L O-263 STB55NE06L

    STB55NE06

    Abstract: S3050
    Text: STB55NE06 N-CHANNEL 60V - 0.19Ω - 55A D2PAK STripFET POWER MOSFET • ■ ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STB55NE06 60 V <0.022 Ω 55 A TYPICAL RDS(on) = 0.019Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dv/dt CAPABILITY


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    PDF STB55NE06 O-263 STB55NE06 S3050

    STB55NE06L

    Abstract: No abstract text available
    Text: STB55NE06L N-CHANNEL 60V - 0.18 Ω - 55A D2PAK STripFET POWER MOSFET TYPE STB55NE06L VDSS RDS on ID 60 V <0.022 Ω 55 A TYPICAL RDS(on) = 0.018Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dv/dt CAPABILITY LOW THRESHOLD DRIVE


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    PDF STB55NE06L O-263 STB55NE06L

    S3050

    Abstract: STB55NE06
    Text: STB55NE06 N-CHANNEL 60V - 0.19Ω - 55A D2PAK STripFET POWER MOSFET • ■ ■ ■ ■ ■ ■ TYPE V DSS RDS on ID STB55NE06 60 V <0.022 Ω 55 A TYPICAL RDS(on) = 0.019Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dv/dt CAPABILITY


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    PDF STB55NE06 O-263 S3050 STB55NE06

    Untitled

    Abstract: No abstract text available
    Text: STB55NE06L  N - CHANNEL 60V - 0.018Ω - 55A D2PAK STripFET POWER MOSFET T YPE STB55NE06L • ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.022 Ω 55A TYPICAL RDS(on) = 0.018 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC


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    PDF STB55NE06L O-263

    Untitled

    Abstract: No abstract text available
    Text: STB55NE06L N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET PRELIMINARY DATA TYPE STB55NE06L • ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.022 Ω 55A TYPICAL RDS(on) = 0.018 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC


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    PDF STB55NE06L O-263

    STB55NE06

    Abstract: No abstract text available
    Text: STB55NE06 N-CHANNEL 60V - 0.19Ω - 55A D2PAK STripFET POWER MOSFET TYPE VDSS RDS on ID STB55NE06 60 V <0.022 Ω 55 A TYPICAL RDS(on) = 0.019Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dv/dt CAPABILITY APPLICATION ORIENTED


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    PDF STB55NE06 O-263 STB55NE06

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    magnetic amplifier saturable core

    Abstract: L6561 application note L6561 AN966 bc337 pin out diagram circuit diagram of mosfet based smps power supply computer smps circuit diagram L6561 application magnetic-amplifier desktop computer smps circuit diagram smps transformer design
    Text: AN1007 APPLICATION NOTE L6561 - BASED SWITCHER REPLACES MAG AMPS IN SILVER BOXES by Claudio Adragna Mag amps a contraction of "Magnetic Amplifier" are widely used in multi-output switching power supplies to get auxiliary regulated power rails. However, they are expensive, bulky, and require a


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    PDF AN1007 L6561 L6561, magnetic amplifier saturable core L6561 application note L6561 AN966 bc337 pin out diagram circuit diagram of mosfet based smps power supply computer smps circuit diagram L6561 application magnetic-amplifier desktop computer smps circuit diagram smps transformer design

    ste30na50

    Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
    Text: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0


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    PDF OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


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    PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    desktop computer smps circuit diagram

    Abstract: magnetic amplifier saturable core Saturable L6561 L6561 AN schematic diagram regulator 12v dc BC337 L6561 application note L6561 AN966 BC337-10
    Text: AN1007 APPLICATION NOTE L6561 - BASED SWITCHER REPLACES MAG AMPS IN SILVER BOXES by Claudio Adragna Mag amps a contraction of ”Magnetic Amplifier” are widely used in multi-output switching power supplies to get auxiliary regulated power rails. However, they are expensive, bulky, and require a


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    PDF AN1007 L6561 L6561, desktop computer smps circuit diagram magnetic amplifier saturable core Saturable L6561 AN schematic diagram regulator 12v dc BC337 L6561 application note L6561 AN966 BC337-10

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    irf840 power supply

    Abstract: STP3020L STP38NF06L STP6NB90FP STe30na50 STP4NB90 STN1NB80 IRF740 sT55n STD1NB60
    Text: April 2000 TO-220 VDSS RDS on max (V) (Ω) -60 30 34 50 55 60 75 80 100 150 200 250 300 Type ID(cont) DEVICES REPLACED (A) REMARKS 0.2 0.004 0.006 0.0065 0.009 0.01 0.01 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP90NF03L STP70NF3LL STP70NF03L STP60NF03L 12


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    PDF O-220 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP90NF03L STP70NF3LL STP70NF03L STP60NF03L STP60NE03L-12 STP50NF03L irf840 power supply STP3020L STP38NF06L STP6NB90FP STe30na50 STP4NB90 STN1NB80 IRF740 sT55n STD1NB60

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


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    PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    Complementary MOSFETs buz11

    Abstract: IRF644 STP90NF03L stp3nc90zfp IRF540 complementary STP6NC60FP Application Notes STP55NE06FP STY15NA100 STP60NE06-16 stp7nb60fp
    Text: POWER MOSFETs IGBTs Selection Guide P T Y U T O F P H E O U Y I O U R E O P L E C N S W H O O N T R O L Y S T E M S IG B Ts IGB Ts Ts IG BTs IG B FEATURE Logic Level Fully Clamped Low Drop Fast Switching Fast Switching + Freewheeling Diode Short Circuit Proof


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    PDF STGD3NB60S STGD3NB60SD STGD7NB60S STGP10NB60S STGD7NB120S-1 O-220 ISOWATT218, PowerSO-10 Max247 STE180NE10 Complementary MOSFETs buz11 IRF644 STP90NF03L stp3nc90zfp IRF540 complementary STP6NC60FP Application Notes STP55NE06FP STY15NA100 STP60NE06-16 stp7nb60fp

    VBG15NB37

    Abstract: STP3020L IRF540 application STP24NF10 BUZ10 STGP10NB60S stp80* equivalent smart ignition igbt VBG15NB37 BUZ11 STD38NF03L
    Text: November ’99 TO-220 Device STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP22NE03L STP55NF03L STP80NS04Z STP60NS04Z IRFZ40 BUZ11 BUZ11A BUZ10 BUZ71 STP80NF55-06 STP80NF55L-06


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    PDF O-220 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L VBG15NB37 STP3020L IRF540 application STP24NF10 BUZ10 STGP10NB60S stp80* equivalent smart ignition igbt VBG15NB37 BUZ11 STD38NF03L

    desktop computer smps circuit diagram

    Abstract: magnetic amplifier saturable core L6561 L6561 AN966 L6561 application note L6561 AN SATURABLE CORE L6561 application stl6561 high frequency mag amps
    Text: AN1007 APPLICATION NOTE L6561 - BASED SWITCHER REPLACES MAG AMPS IN SILVER BOXES by Claudio Adragna Mag amps a contraction of "Magnetic Amplifier" are widely used in multi-output switching power supplies to get auxiliary regulated power rails. However, they are expensive, bulky, and require a


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    PDF AN1007 L6561 L6561, desktop computer smps circuit diagram magnetic amplifier saturable core L6561 AN966 L6561 application note L6561 AN SATURABLE CORE L6561 application stl6561 high frequency mag amps

    Untitled

    Abstract: No abstract text available
    Text: Zjï SGS-THOMSON ¡ILIßTI^OKinei STB55NE06L N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE " POWER MOSFET PRELIM IN ARY DATA TYPE S TB 55N E06L V dss RDS on Id 60 V < 0.022 a 55A . TYPICAL RDs(on) =0.018 £2 . EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED


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    PDF STB55NE06L O-263

    RE55

    Abstract: No abstract text available
    Text: rZ 7 SGS-THOMSON Ä T# STB55NE06L M Ê M iL iË ÏÏM iD E i N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE " POWER MOSFET PRELIMINARY DATA TYP E STB55N E06L Voss R D S o n Id 60 V < 0 .0 2 2 f t 55A . TYPICAL R d s ( o ii) = 0.018 Q m EXCEPTIONAL dv/dt CAPABILITY


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    PDF STB55NE06L STB55N RE55

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STB55NE06 N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYP E V S TB55N E06 dss 60 V R d S ( o ii) Id < 0.0 22 Q. 55 A . . TYPICAL Ros(on) =0.019 £2 EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED


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    PDF STB55NE06 TB55N O-263