J439
Abstract: 2SJ439 012C3 G1150 J4-39
Text: 2SJ439 東芝電界効果トランジスタ シリコンPチャネルMOS形 π−MOSⅤ 2SJ439 ○ リレー駆動DC−DC コンバータ用 単位: mm z 順方向伝達アドミタンスが高い。 : |Yfs| = 6.0 S (標準) z 漏れ電流が低い。
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2SJ439
2002/95/EC)
J439
2SJ439
012C3
G1150
J4-39
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2SJ439
Abstract: No abstract text available
Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π−MOSV 2SJ439 DC/DC Converter, Relay Drive and Motor Drive Applications Unit: mm 2.5-V gate drive Low drain−source ON-resistance : RDS (ON) = 0.18 Ω (typ.) High forward transfer admittance
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2SJ439
2SJ439
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2SJ439
Abstract: J439
Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π−MOSV 2SJ439 DC/DC Converter, Relay Drive and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 0.6 MAX. : RDS (ON) = 0.18 Ω (typ.) z High forward transfer admittance
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2SJ439
2SJ439
J439
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2SJ439
Abstract: J439
Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSV 2SJ439 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 2.5-V gate drive Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) High forward transfer admittance
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2SJ439
2SJ439
J439
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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J439
Abstract: 2SJ439
Text: 2SJ439 東芝電界効果トランジスタ シリコンPチャネルMOS形 π−MOSⅤ 2SJ439 ○ リレー駆動DC−DC コンバータ用 z 2.5V 駆動です。 z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 6.0 S (標準)
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2SJ439
SC-64
2002/95/EC)
J439
2SJ439
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2SJ439
Abstract: No abstract text available
Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSV 2SJ439 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 2.5 V gate drive Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) High forward transfer admittance
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2SJ439
2SJ439
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Untitled
Abstract: No abstract text available
Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π−MOSV 2SJ439 DC/DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 2.5-V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.18 Ω (typ.) z High forward transfer admittance
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2SJ439
SC-64
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2SJ439
Abstract: J439
Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π−MOSV 2SJ439 DC/DC Converter, Relay Drive and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. 5.5 ± 0.2 : |Yfs| = 6.0 S (typ.) : IDSS = −100 A (max) (VDS = −16 V)
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2SJ439
2SJ439
J439
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2SJ439
Abstract: No abstract text available
Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSV 2SJ439 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm l 2.5 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) l High forward transfer admittance
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2SJ439
2SJ439
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2SJ439
Abstract: J439
Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π−MOSV 2SJ439 DC/DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 2.5-V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.18 Ω (typ.) z High forward transfer admittance
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2SJ439
2SJ439
J439
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004L
TTC4116*
2SC4118
TTA1586*
2SA1588
2SC4117
2SA1587
2SC5233
2SC4738
2SA1832
GT30F131
GT30F124
TK18A60V
smd m5 transistor 6-pin
SMD TRANSISTOR H2A NPN
GT50N322
MARKING SMD PNP TRANSISTOR h2a
GT30J124
*30f124
TPCP8R01
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2SK3878 equivalent
Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)
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2SK2963
2SK2962
2SJ508
2SJ509
2SK3670
2SJ313
2SJ338
2SK2013
2SK2162
2SJ360
2SK3878 equivalent
2sk2611
2SK3759
2SK3878
2SK3869
2SK2013
toshiba POWER MOS FET 2sj 2sk
2SK3868
2SK3567 equivalent
2SK2718
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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2SK1603
Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
Text: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1
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BCE0017A
2SK1603
2SK3561 equivalent
un 1044
2SJ238
2sk1603 datasheet
2SK2039
2SK2030
2SK2056
2SK1487
2SK1078
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TK12A10K3
Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4
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transistor 1211
Abstract: No abstract text available
Text: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M O SV 2SJ439 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 2.5V Gate Drive Low Drain-Source ON Resistance
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OCR Scan
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2SJ439
--16V)
transistor 1211
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marking DIODE 2U 04
Abstract: 2SJ439
Text: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M O SV 2SJ439 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 2.5V Gate Drive Low Drain-Source ON Resistance : Rd S(ON) = 0.180 (Typ.)
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OCR Scan
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2SJ439
marking DIODE 2U 04
2SJ439
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M O SV 2SJ439 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 2.5V Gate Drive Low Drain-Source ON Resistance : Rd S(ON) =0.18il (Typ.)
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OCR Scan
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2SJ439
--100/iA
--16V)
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2SJ439
Abstract: No abstract text available
Text: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M O SV 2SJ439 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 2.5V Gate Drive Low Drain-Source ON Resistance : Rd S(ON) =0.180 (Typ.)
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OCR Scan
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PDF
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2SJ439
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2SJ439
Abstract: No abstract text available
Text: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M OSV 2SJ439 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 2.5 V Gate Drive Low Drain-Source ON Resistance : RßS (ON) = 0.18 ü, (Typ.)
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OCR Scan
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2SJ439
2SJ439
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M O SV 2 SJ4 3 9 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U STRIA L APPLICATIO NS U nit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS j 2.5V Gate Drive
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2SJ439
20kf2)
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