2SJ439 Search Results

J439

Abstract: 2SJ439 012C3 G1150 J4-39
Contextual Info: 2SJ439 東芝電界効果トランジスタ シリコンPチャネルMOS形 π−MOSⅤ 2SJ439 ○ リレー駆動DC−DC コンバータ用 単位: mm z 順方向伝達アドミタンスが高い。 : |Yfs| = 6.0 S (標準) z 漏れ電流が低い。

2SJ439

Contextual Info: 2SJ439 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π−MOSV 2SJ439 DC/DC Converter, Relay Drive and Motor Drive Applications Unit: mm 2.5-V gate drive Low drain−source ON-resistance : RDS (ON) = 0.18 Ω (typ.) High forward transfer admittance

2SJ439

Abstract: J439
Contextual Info: 2SJ439 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π−MOSV 2SJ439 DC/DC Converter, Relay Drive and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 0.6 MAX. : RDS (ON) = 0.18 Ω (typ.) z High forward transfer admittance

transistor 1211

Contextual Info: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M O SV 2SJ439 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 2.5V Gate Drive Low Drain-Source ON Resistance

2SJ439

Abstract: J439
Contextual Info: 2SJ439 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSV 2SJ439 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 2.5-V gate drive Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) High forward transfer admittance

marking DIODE 2U 04

Abstract: 2SJ439
Contextual Info: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M O SV 2SJ439 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 2.5V Gate Drive Low Drain-Source ON Resistance : Rd S(ON) = 0.180 (Typ.)

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

J439

Abstract: 2SJ439
Contextual Info: 2SJ439 東芝電界効果トランジスタ シリコンPチャネルMOS形 π−MOSⅤ 2SJ439 ○ リレー駆動DC−DC コンバータ用 z 2.5V 駆動です。 z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 6.0 S (標準)

Contextual Info: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M O SV 2SJ439 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 2.5V Gate Drive Low Drain-Source ON Resistance : Rd S(ON) =0.18il (Typ.)

2SJ439

Contextual Info: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M O SV 2SJ439 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 2.5V Gate Drive Low Drain-Source ON Resistance : Rd S(ON) =0.180 (Typ.)

2SJ439

Contextual Info: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M OSV 2SJ439 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 2.5 V Gate Drive Low Drain-Source ON Resistance : RßS (ON) = 0.18 ü, (Typ.)

2SJ439

Contextual Info: 2SJ439 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSV 2SJ439 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 2.5 V gate drive Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) High forward transfer admittance

Contextual Info: 2SJ439 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π−MOSV 2SJ439 DC/DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 2.5-V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.18 Ω (typ.) z High forward transfer admittance

2SJ439

Abstract: J439
Contextual Info: 2SJ439 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π−MOSV 2SJ439 DC/DC Converter, Relay Drive and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. 5.5 ± 0.2 : |Yfs| = 6.0 S (typ.) : IDSS = −100 A (max) (VDS = −16 V)

2SJ439

Contextual Info: 2SJ439 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSV 2SJ439 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm l 2.5 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) l High forward transfer admittance

2SJ439

Abstract: J439
Contextual Info: 2SJ439 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π−MOSV 2SJ439 DC/DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 2.5-V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.18 Ω (typ.) z High forward transfer admittance

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SK1603

Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
Contextual Info: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1

TK12A10K3

Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
Contextual Info: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4