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    STMicroelectronics STB55NE06L

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    ComSIT USA STB55NE06L 40
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    STMicroelectronics STB55NE06

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    Component Electronics, Inc STB55NE06 50
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    B55NE06

    Abstract: STB55NE06 55ao s30120
    Text: B55NE06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST B55NE06 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.022 Ω 55 A TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC


    Original     		PDF STB55NE06 B55NE06 O-26rights B55NE06 STB55NE06 55ao s30120