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Vishay Siliconix IRFD310PBF MOSFET N-CH 400V 350MA 4DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFD310PBF	Bulk	2,112		1	1 $2.17 10 $1.389 100 $2.17 1000 $0.68962 10000 $0.68962	Buy Now
Rochester Electronics LLC IRFD310 0.4A 400V 3.600 OHM N-CHANNEL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFD310	Bulk			243	1 - 10 - 100 - 1000 $1.24 10000 $1.24	Buy Now
Vishay Siliconix IRFD310 MOSFET N-CH 400V 350MA 4DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFD310	Tube			2,500	1 - 10 - 100 - 1000 - 10000 $1.4	Buy Now
Vishay Intertechnologies IRFD310PBF MOSFET N-CHANNEL 400V - Tape and Reel (Alt: IRFD310PBF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IRFD310PBF	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.5687	Buy Now
EBV Elektronik	IRFD310PBF			13 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Semiconductors IRFD310PBF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	IRFD310PBF		1,222			1 - 10 - 100 $0.56 1000 $0.56 10000 $0.5	Buy Now

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IRFD310 Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFD310	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF
IRFD310	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRFD310	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRFD310	Intersil	0.4A, 400V, 3.600 ?, N-Channel Power MOSFET	Original	PDF
IRFD310	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFD310	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 350MA 4-DIP	Original	PDF
IRFD310	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRFD310	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 400V, .42A, Pkg Style HEXDIP	Scan	PDF
IRFD310	International Rectifier	N-Channel Power MOSFETs	Scan	PDF
IRFD310	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRFD310	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRFD310	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
IRFD310	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFD310	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

IRFD310PBF	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRFD310PBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 350MA 4-DIP	Original	PDF
IRFD310R	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRFD310R	International Rectifier	Rugged Series Power MOSFETs - N-Channel	Scan	PDF
IRFD310R	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

IRFD310 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFD310 Abstract: No abstract text available Text: PD -9.1225 IRFD310 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 400V RDS on = 3.6Ω ID = 0.35A Description Third Generation HEXFETs from International Rectifier provide the designer	Original	PDF	IRFD310 RFD310 IRFD310
Untitled Abstract: No abstract text available Text: IRFD310 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)400m# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.6# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ	Original	PDF	IRFD310
Untitled Abstract: No abstract text available Text: IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) () • Repetitive Avalanche Rated VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration • For Automatic Insertion	Original	PDF	IRFD310, SiHFD310 2002/95/EC 11-Mar-11
IRFD310 Abstract: SiHFD310 Text: IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.6 • For Automatic Insertion Qg (Max.) (nC) 17 Qgs (nC) 3.4 • End Stackable 8.5 • Fast Switching	Original	PDF	IRFD310, SiHFD310 18-Jul-08 IRFD310
IRFD120 Abstract: No abstract text available Text: PD- 95932 IRFD310PbF Lead-Free 10/28/04 Document Number: 91133 www.vishay.com 1 IRFD310PbF Document Number: 91133 www.vishay.com 2 IRFD310PbF Document Number: 91133 www.vishay.com 3 IRFD310PbF Document Number: 91133 www.vishay.com 4 IRFD310PbF Document Number: 91133	Original	PDF	IRFD310PbF IRFD120 IRFD120
Untitled Abstract: No abstract text available Text: PD -9.1225 IRFD310 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 400V RDS on = 3.6Ω ID = 0.35A Description Third Generation HEXFETs from International Rectifier provide the designer	Original	PDF	IRFD310 08-Mar-07
Untitled Abstract: No abstract text available Text: IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) () • Repetitive Avalanche Rated VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration • For Automatic Insertion	Original	PDF	IRFD310, SiHFD310 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
IRFD310 Abstract: No abstract text available Text: PD -9.1225 IRFD310 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 400V RDS on = 3.6Ω ID = 0.35A Description Third Generation HEXFETs from International Rectifier provide the designer	Original	PDF	IRFD310 12-Mar-07 IRFD310
92335 Abstract: No abstract text available Text: IRFD310_RC, SiHFD310_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRFD310 SiHFD310 AN609, 25-Oct-10 7558m 7696m 0909m 92335
SiHFD310 Abstract: No abstract text available Text: IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.6 • For Automatic Insertion Qg (Max.) (nC) 17 Qgs (nC) 3.4 • End Stackable 8.5 • Fast Switching	Original	PDF	IRFD310, SiHFD310 12-Mar-07
IRFD310PBF Abstract: SiHFD310 Text: IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration • For Automatic Insertion COMPLIANT	Original	PDF	IRFD310, SiHFD310 18-Jul-08 IRFD310PBF
mosfet k 1225 Abstract: IRFD310 Text: Previous Datasheet Index Next Data Sheet PD -9.1225 IRFD310 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 400V RDS on = 3.6Ω	Original	PDF	IRFD310 mosfet k 1225 IRFD310
IRFD310 Abstract: TB334 Text: IRFD310 Data Sheet January 2002 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a	Original	PDF	IRFD310 IRFD310 TB334
IRFD310 Abstract: TB334 400V to 6V DC Regulator TO 220 Package Text: IRFD310 Data Sheet July 1999 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET 2324.4 Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a	Original	PDF	IRFD310 IRFD310 TB334 400V to 6V DC Regulator TO 220 Package

Untitled Abstract: No abstract text available Text: PD- 95932 IRFD310PbF Lead-Free 10/28/04 Document Number: 91133 www.vishay.com 1 IRFD310PbF Document Number: 91133 www.vishay.com 2 IRFD310PbF Document Number: 91133 www.vishay.com 3 IRFD310PbF Document Number: 91133 www.vishay.com 4 IRFD310PbF Document Number: 91133	Original	PDF	IRFD310PbF IRFD120
Untitled Abstract: No abstract text available Text: IRFD310 Data Sheet Title FD 0 bt 4A, 0V, 00 m, July 1999 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a	Original	PDF	IRFD310
Untitled Abstract: No abstract text available Text: IRFD310, SiHFD310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) () • Repetitive Avalanche Rated VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration • For Automatic Insertion	Original	PDF	IRFD310, SiHFD310 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFD310 Semiconductor D ata S h eet Ju ly 1999 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 0.4A, 400V • r DS ON = 3 .6 0 0 i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics	OCR Scan	PDF	IRFD310 TB334 TA17444.
TRANSISTORS 132 GD Abstract: No abstract text available Text: tyvvys S IRFD310, IRFD311, IRFD312, IRFD313 S e m ico n d ucto r y 7 0.3A and 0.4A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.3A and 0.4A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	PDF	IRFD310, IRFD311, IRFD312, IRFD313 TRANSISTORS 132 GD
IRFD311 Abstract: FD31 IRFD310 IRFD312 IRFD313 a350v Text: -Standard Power MOSFETs IRFD310, IRFD311, IRFD312, IRFD313 File Number 2325 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors	OCR Scan	PDF	IRFD310, IRFD311, IRFD312, IRFD313 IRFD313 IRFD311 FD31 IRFD310 IRFD312 a350v
Untitled Abstract: No abstract text available Text: bitemational [g»lRectifier HEXFET Power MOSFET • • • • • • • PD -9.1225 IRFD310 Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V d s s = 400V	OCR Scan	PDF	IRFD310 0G224bl
fd312 Abstract: fd 312 s Text: 21 H A R R IS IRFD310/ 311/ 312/313 IRFD31OR/311R/312R/313R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features 4 -P IN DIP TOP VIEW • 0.3A and 0.4A, 350V - 400V • i'DS on = 3.6H and 5 .0 0 • Single Pulse Avalanche Energy Rated*	OCR Scan	PDF	IRFD310/ IRFD31OR/311R/312R/313R IRFD310, IRFD311, IRFD312, IRFD313 IRFD310R, IRFD311R, IRFD312R, IRFD313R fd312 fd 312 s
IRFD313R Abstract: IRFD310R IRFD311R IRFD312R IRF0312 Text: _ Rugged Power MOSFETs File N u m b er 2039 IRFD310R, IRFD311R, IRFD312R, IRFD313R Avalanche Energy Rated N-Channel Power MOSFETs 0.3A and 0.4A, 350V-400V rDs on = 3.6fi and 5.0Q N-CHANNEL ENHANCEMENT MODE Features: • ■ ■ ■	OCR Scan	PDF	IRFD310R, IRFD311R, IRFD312R, IRFD313R 50V-400V IRFD312R IRFD313R IRFD310f IRFD310R IRFD311R IRF0312
sot23 BS170 Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100 Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120	OCR Scan	PDF	BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 sot23 BS170 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100

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IRFD310 Price and Stock

Vishay Siliconix IRFD310PBF

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IRFD310 Datasheets (19)

IRFD310 Datasheets Context Search

IRFD310

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IRFD310

IRFD120

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IRFD310

92335

SiHFD310

IRFD310PBF

mosfet k 1225

IRFD310

IRFD310

Untitled

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Untitled

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TRANSISTORS 132 GD

IRFD311

Untitled

fd312

IRFD313R

sot23 BS170