IRFD313 Search Results

TRANSISTORS 132 GD

Contextual Info: tyvvys S IRFD310, IRFD311, IRFD312, IRFD313 S e m ico n d ucto r y 7 0.3A and 0.4A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.3A and 0.4A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRFD311

Abstract: FD31 IRFD310 IRFD312 IRFD313 a350v
Contextual Info: -Standard Power MOSFETs IRFD310, IRFD311, IRFD312, IRFD313 File Number 2325 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

Contextual Info: IRFD313 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)300m# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.2# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ

IRFD313R

Abstract: IRFD310R IRFD311R IRFD312R IRF0312
Contextual Info: _ Rugged Power MOSFETs File N u m b er 2039 IRFD310R, IRFD311R, IRFD312R, IRFD313R Avalanche Energy Rated N-Channel Power MOSFETs 0.3A and 0.4A, 350V-400V rDs on = 3.6fi and 5.0Q N-CHANNEL ENHANCEMENT MODE Features: • ■ ■ ■

TA17444

Contextual Info: H a IRFD310, IRFD311, IRFD312, IRFD313 r r i s ” “ I CONDUCTOE 0.3A and 0.4A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.3A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

irfd310

Contextual Info: IRFD310, IRFD311, IRFD312, IRFD313 S E M I C O N D U C T O R 0.3A and 0.4A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.3A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

Contextual Info: • 43 025 71 0 0 5 4 1 2 0 237 ■ S3 HARRIS HAS IR F D 3 1 0 /3 1 1 /3 1 2 /3 1 3 ÌRFD31 O R /311R /312R /313R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 19 91 Package Features 4-PIN DIP TOP VIEW • 0.3A and 0.4A, 350V - 400V • roS on = 3-6 fl ancl 5-o fl

fd312

Abstract: fd 312 s
Contextual Info: 21 H A R R IS IRFD310/ 311/ 312/313 IRFD31OR/311R/312R/313R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features 4 -P IN DIP TOP VIEW • 0.3A and 0.4A, 350V - 400V • i'DS on = 3.6H and 5 .0 0 • Single Pulse Avalanche Energy Rated*

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:

1RFP250

Abstract: IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 irf630 irf640 IRF250 IRFD210 IRF331 irf220 IRF241
Contextual Info: T H O M SO N/ D I S T R I B U T O R SflE D • =¡021,073 0 0 05 70 b ZIE m TCSK Power MOSFETs IRF-Series Power MOSFETs — N-Channel Continued Package Maximum Ratings b v DSS (V) ■d s (A) rDS(ON) OHMS 150 4 4.50 5 5.5 1.20 8 9 16 18 25 30 200 0.25 0.32