IRFD220 Search Results

Contextual Info: IRFD220 Data Sheet Title FD 0 bt 8A, 0V, 00 m, July 1999 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFD220

Abstract: SiHFD220-E3 IRFD220PBF
Contextual Info: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFD220

Abstract: Transistors c-3229 C 3229 IRFD221 D220 IRFD222 IRFD223
Contextual Info: - Standard Power MOSFETs File Number IRFD220, IRFD221, IRFD222, IRFD223 23117 Power MOS Field-Effect Transistors N -C H A N N EL ENHAN C EM EN T MODE

fd220

Abstract: IRFD220 IRFD221 1RFD220
Contextual Info: IRFD220,221 D82CN2.M2 iPSMM-iiæa Mûr FIELD EFFECT POWER TRANSISTOR This series of NhChannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DM OS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.

IRFD220PBF

Abstract: IRFD220 SiHFD220 SiHFD220-E3
Contextual Info: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: h a r ^ IRFD220, IRFD221, IRFD222, IRFD223 s s e m i c o n d u c t o r 0.7A and 0.8A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.7A and 0.8A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRFD220

Contextual Info: IRFD220, IRFD221, IRFD222, IRFD223 S E M I C O N D U C T O R 0.7A and 0.8A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.7A and 0.8A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

diode 222r

Abstract: MOSFET 4407 a circuit 4407
Contextual Info: 2 HARRIS IR FD 220/221/222/223 IRFD220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s 4-P IN DIP • 0.7 A and 0.8A , 1 5 0V - 2 0 0V TOP VIEW • rDS(on = 0 .8 H and 1 .2 Ct • Single Pulse Avalanche Energy R ated*

SiHFD220

Contextual Info: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

4501m

Abstract: AN609 IRFD220
Contextual Info: IRFD220_RC, SiHFD220_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRFD120

Contextual Info: PD- 95917 IRFD220PbF • Lead-Free Document Number: 91131 10/27/04 www.vishay.com 1 IRFD220PbF Document Number: 91131 www.vishay.com 2 IRFD220PbF Document Number: 91131 www.vishay.com 3 IRFD220PbF Document Number: 91131 www.vishay.com 4 IRFD220PbF Document Number: 91131

IRFD220PBF

Abstract: IRFD120
Contextual Info: PD- 95917 IRFD220PbF • Lead-Free www.irf.com 1 10/27/04 IRFD220PbF 2 www.irf.com IRFD220PbF www.irf.com 3 IRFD220PbF 4 www.irf.com IRFD220PbF www.irf.com 5 IRFD220PbF 6 www.irf.com IRFD220PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

IRFD220

Contextual Info: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFD221

Abstract: 3203 MOSFET
Contextual Info: MOTOROLA SC ÍXSTRS/R F} Tfl 6367254, M O T O R O L A SC XSTRS/R F öF|fc,3t7aSL( 0003202 ; . 980 63282 D IRFD220-223 T ' 3 5 ~S lS ELECTRICAL CHARACTERISTICS — C o n tin u e d (Tc - 25°C unless otherwise noted) Characteristic Symbol Min Typ Max U nit

IRFD220

Abstract: TB334
Contextual Info: IRFD220 Data Sheet January 2002 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 0.8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

rectifier s4 79

Abstract: diode t7e irfd220
Contextual Info: International SMI Rectifier 4 ÔS S4 S5 GÜ1S0MÜ I T T H IN R PD-9.417F IRFD220 INTERNATIONAL HEXFET Power MOSFET b5E RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFD220

Abstract: TB334 la 4287
Contextual Info: IRFD220 Data Sheet July 1999 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 0.8A, 200V • rDS ON = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

irfd220

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD220 IRFD223 TMOS Field Effect Transistors Dual In-Line Package N-Channel Enhancement Mode Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline T TMOS TMOS FET TRANSISTORS

mosfet k 2038

Abstract: IRFD222R 250M IRFD220R IRFD221R IRFD223R
Contextual Info: Rugged Power M O S F E T s_ File Num ber 2038 IRFD220R, IRFD221R, IRFD222R, IRFD223R Avalanche Energy Rated N-Channel Power MOSFETs 0.8A a n d 0.7A, 1 5 0 V -2 0 0 V ros on = 0.8fi a n d 1 .2 0 N -C H A N N E L E N H A N C E M E N T M O D E

Contextual Info: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFD120

Contextual Info: PD- 95917 IRFD220PbF • Lead-Free 1 IRFD220PbF 2 IRFD220PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE

Contextual Info: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFD220

Abstract: 417F
Contextual Info: International S Rectifier PD-9.417F IRFD220 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 200V ^DS on = 0 -8 0 Q