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    Harris Semiconductor IRF645

    13A, 250V, 0.34 OHM, N-Channel POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRF645 265 1
    • 1 $0.9642
    • 10 $0.9642
    • 100 $0.9063
    • 1000 $0.8196
    • 10000 $0.8196
    		Buy Now

    IRF645 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF645 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF645 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF645 International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRF645 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF645 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF645 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF645 Unknown FET Data Book Scan PDF
    IRF645 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRF645 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRF645 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)13# I(DM) Max. (A) Pulsed I(D)8.0 @Temp (øC)100 IDM Max (@25øC Amb)52# @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF645

    rf1s644s

    Abstract: RF1S644 irf644 RF1S644SM TA17423
    Text: IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM S E M I C O N D U C T O R 13A and 14A, 250V and 275V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 13A and 14A, 250V and 275V • High Input Impedance These are N-Channel enhancement mode silicon gate


    Original     		PDF IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM TA17423. rf1s644s RF1S644 irf644 RF1S644SM TA17423

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    rf1s644s

    Abstract: No abstract text available
    Text: HARRIS S E M I C O N D U C T O R IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM 13A and 14A, 250V and 275V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 13A and 14A, 250V and 275V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM TA17423E RF644, IRF645 rf1s644s

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM 13A and 14A, 250V and 275V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Description Features 13A and 14A, 250V and 275V High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM opera1S644,

    1rf644

    Abstract: 1RF645
    Text: [ 2 H A R R IS IRF644, IRF645 IRF646, IRF647 N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Package Features TO -22 0 A B TOP VIEW • 13A and 14A, 250V - 275V • rosCon = 0 .2 8 0 and 0 .3 4 fl • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited


    OCR Scan     		PDF IRF644, IRF645 IRF646, IRF647 IRF645, IRF647 JRF644, Figure16 1rf644 1RF645

    IRF645

    Abstract: IRF646 IRF644 100AH IRF647 Rf644 IFIF644 IFIF646
    Text: _ Rugged Power MOSFETs File Num ber 2169 IRF644, IRF645, IRF646, IRF647 Avalanche Energy Rated N-Channel Power MOSFETs N-CHANNEL ENHANCEMENT MODE 14A, and 13A, 275V, 250V rDS on = 0.280, 0 .3 4 0 Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRF644, IRF645, IRF646, IRF647 IRF647 IRF645 IRF646 IRF644 100AH Rf644 IFIF644 IFIF646

    irf644

    Abstract: Irfp244
    Text: IRF644/645 IRFP244/245 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRF644/645 IRFP244/245 IRF644/IRFP244 IRF645/IRFP245 irf644 Irfp244

    IRF644

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 5 G0172flfl ?4fl IRF644/645 IRFP244/245 SH6K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF G0172flfl IRF644/645 IRFP244/245 IRF644/IRFP244 IRF645/IRFP245 IRF644 IRFP244 IRF645 IRFP245 IRF644

    1rf740

    Abstract: 1RF840 1rf820 1RF634 1RF630 1rf730 IRF810 1RF645 IRF112 IRF645
    Text: - 254 - f M £ tt ft X Vd s or € £ Vg s fé < T a = 2 5 cC Id Pd ÏI Ig s s Id s s th) ft Ta=25‘ C) Ds(on) Vi>s= I d (on) g fs Ciss Coss Crss (*typ) (* typ) (*typ) * /CH min Vg s m ax Vd s (max) 1D (nA) (max) (max) (max) (pF) (pF) (pF) $1- B m % Vg s = 0


    OCR Scan     		PDF 1RF642 O-220AB IRF643 IRF644 IRF722 IRF723 IRF730 O-220 IRF731 1rf740 1RF840 1rf820 1RF634 1RF630 1rf730 IRF810 1RF645 IRF112 IRF645

    1RF630

    Abstract: irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613
    Text: - 244 - ä! € tt f # t Vd s or € * $ fg Ta=25‘ C Vg s • f Vd g )V (V) (V) ie. IGSS Pd Id * /CH * /CH (A) m Vg s th) ID S S max (nA) Vg s (V) (MA) Vd s (V) 14 Coss Crss 5* m. ffi % V g s =0 *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (max) (pF) Id (A)


    OCR Scan     		PDF Ta-2510) SD210 TD-12 SD211 SD212 S0213 O-220AB IRF630 IRF631 1RF630 irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613

    IRFZ30

    Abstract: IRFZ45 IRFZ32 irfz IRFZ12 THOMSON DISTRIBUTOR 58e d IRFZ20 IRFZ25 THOMSON 58E THOMSON 58E CASE OUTLINE
    Text: THOriSÜN/ DISTRIBUTOR SflE D • ÌOat.073 OOOSaDl HEXFET Powermosfets L^ l m TCSK intemaraonal Rectifier Plastic Insertable Package T0-220 N-Channel Part Number V p s Drain Source Voltage Volts R0S(on) On-State Resistance (Ohms) Iq Continuous Drain Current


    OCR Scan     		PDF T0-220 IRFZ12 O-220AB IRFZ10 IRFZ22 IRFZ20 IRFZ32 IRFZ30 IRFZ42 IRFZ40 IRFZ30 IRFZ45 IRFZ32 irfz THOMSON DISTRIBUTOR 58e d IRFZ20 IRFZ25 THOMSON 58E THOMSON 58E CASE OUTLINE

    1rf730

    Abstract: 1rf740 1RF840 1RF630 IRF810 1RF711 IRFI13 IRF643 IRF644 IRF711
    Text: - 254 - f M tt £ ft X Vd s or € £ Vg s fé < T a = 2 5 cC Id Pd ÏI Ig s s Id s s Vg s th) ft % Vi>s= Ta=25‘ C) I d (on) D s (o n ) g fs Ciss Coss Crss (*typ) (* typ) (*typ) (max) (max) (max) (pF) (pF) (pF) Vg s = 0 Vg s * /CH Vd g * /CH min Vg s


    OCR Scan     		PDF 1RF642 O-220AB IRF643 IRF644 IRF833 IRF840 -220AB 1rf730 1rf740 1RF840 1RF630 IRF810 1RF711 IRFI13 IRF711

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    1RF640

    Abstract: 1rf630 IRF810 1RF633 1RF634 1RF522 1rf740 Rf644 IRF530 IRF533
    Text: - £> tt £ * f m V Vd s or € * Vdg Hr V £ Vg s tS eg. (Ta=25*0) Id Pd loss I gss Vg s th) 14 ft lo(on) F Ds(on) Vd s = g fs Ciss Coss * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) *typ Id (*typ) (max) (*typ) (max) (max) (S) (A) (pF)


    OCR Scan     		PDF 1RF522 O-220AB RF523 IRF530 IRF722 IRF723 IRF730 O-220 IRF731 1RF640 1rf630 IRF810 1RF633 1RF634 1rf740 Rf644 IRF533

    1rf740

    Abstract: 1RF840 1rf730 IRF810 1RF640 1RFD110 IRF9613 irf9620 IRF9640 IRFI13
    Text: - 254 - f M £ tt ft X Vd s or € £ Vg s < T a = 2 5 cC Id Pd ÏI Ig s s Id s s Vg s th) % Vi>s= ft Ta=25‘ C) I d (on) D s(o n ) g fs Ciss Coss Crss (*typ) (* typ) (*typ) * /CH min Vg s m m ax Vd s (max) 1D (nA) (max) (max) (max) (pF) (pF) (pF) $1-


    OCR Scan     		PDF 1RF642 O-220AB IRF643 IRF644 IRF833 IRF840 -220AB 1rf740 1RF840 1rf730 IRF810 1RF640 1RFD110 IRF9613 irf9620 IRF9640 IRFI13

    IRF644

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRF644/645 FEATURES • Lower Rds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRF644/645 O-220 IRF644 IRF645

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    IRF9120

    Abstract: 1rf740 1rf730 IRF9223 1RF840 IRF9122 IRF9121 LM3661TL-1.25 IRF713 l 9143
    Text: - 25 4 - f M tt £ ft Vd s or € X £ Vg s V Id Pd * /CH Vd g % fé <Ta=25cC ) (V) (A) ÏI Ig s s Vg s th) Id s s * /CH min (nA) m Vg s (V) ( HA ) Vd s (V) (V) Vi>s= Vg s max (V) % 1D (nA) ft (Ta=25‘ C) Id (on) Ds(on) g fs Ciss Coss Crss Vg s =0 (max)


    OCR Scan     		PDF 1RF642 O-220AB IRF643 IRF644 IRF833 IRF840 -220AB IRF9120 1rf740 1rf730 IRF9223 1RF840 IRF9122 IRF9121 LM3661TL-1.25 IRF713 l 9143

    1RF640

    Abstract: 1rf740 irf810 1RF540 1RF840 IRFAE50 1RF630 IRF612 irf9620 IRF530
    Text: - 253 f m * V Vd s £> tt £ £ Vg s Id Igss Pd V g s th loss or € * Vdg Hr V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) F Ds(on) Vd s = Vg s Id (mA) 14 ft eg. tS (Ta=25*0) (Ta=25T3) lo(on) Ciss g fs Coss ft & 11 m Vg s =0 (max)


    OCR Scan     		PDF 1RF522 O-220AB RF523 IRF530 IRF630 IRF631 T0-220AB 1RF640 1rf740 irf810 1RF540 1RF840 IRFAE50 1RF630 IRF612 irf9620

    1rf740

    Abstract: 1RF642 1rf730 1RF640 1RFD110 1RF840 IRF643 IRF644 IRF711 IRF712
    Text: - 254 - f M £ tt € ft X £ Vd s or Vd g Vg s fé <Ta=25cC Id Pd * /CH * /CH ÏI Ig s s V g s th) Id s s min 1D nA) (Ta=25‘C ) Id (on) D s(o n ) Vi>s= Vg s max ft g fs Ciss Coss Crss $1- B m % V g s =0 (max) *typ V g s (V) (0) *lyp (A) (nA) IRF642 IR


    OCR Scan     		PDF 1RF642 O-220AB IRF643 IRF644 IRF833 IRF840 -220AB 1rf740 1rf730 1RF640 1RFD110 1RF840 IRF711 IRF712

    pj 67 diode

    Abstract: pj 69 diode irf644 IRF64 pj 59 diode IRF645 IRF 54 pj 83 diode PJ 74 rectifier diode for max 250v 1.5A
    Text: HE 0 | MÖSS4S2 □□□ÖS12 a I Data Sheet No. PD-9.527A INTERNATIONAL RE CT IFIER INTERNATIONAL RECTIFIER IO R T-39-15 REPETITIVE AVALANCHE AND dv/dt RATED IR F 6 44 IR F 6 4 5 HEXFET TRANSISTORS ;n N-CHANNEL 250 Volt, 0.28 Ohm HEXFET T0-220AB Plastic Package


    OCR Scan     		PDF T-39-15 O-220AB C-267 IRF644, IRF645 0Q0A511 C-268 pj 67 diode pj 69 diode irf644 IRF64 pj 59 diode IRF 54 pj 83 diode PJ 74 rectifier diode for max 250v 1.5A

    IRFP237

    Abstract: IRFP234 IRFP235 IRF246 IRF640R IRF627 irfp236 IRFP255 1RF632 IRF244
    Text: TH OH SO N/ D I S T R I B U TOR 5ñE D T05t.fl73 QD D S 7 1 D 713 TCSK Power M O S F E T s R u gge d -Se rie s Power M O S F E T s — N -Channel continued 0.45 0.60 0.70 0.80 1.80 2 2.20 2.50 3 3.5 4 4.5 5 5.5 8 9 16 18 25 30 250 3.30 3.80 6.50 8.10 13


    OCR Scan     		PDF T05tifl73 QDDS71D IRF232R IRF230R IRF242R IRF240R IRF252R IRF250R IRFF212R IRFF210R IRFP237 IRFP234 IRFP235 IRF246 IRF640R IRF627 irfp236 IRFP255 1RF632 IRF244