2N5087 Search Results

2N5087

Abstract: transistor 2N5087
Contextual Info: ON Semiconductort Amplifier Transistor 2N5087 PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 50 Vdc Collector–Base Voltage VCBO 50 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous

2N5088 equivalent

Abstract: 2N5088 2n5088 transistor 2N5089 2N5087 ST transistor 2N5089 equivalent 2N5089 NPN 2N5089 power ST 024
Contextual Info: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.

2N5088

Abstract: 2N5089 2N5088 equivalent 2N5089 transistor 2n5088 transistor ST 024 2N5086 2N5087 st2n5088 2N5088 power
Contextual Info: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.

Contextual Info: 2N5087 Amplifier Transistor PNP Silicon Features • These are Pb−Free Devices* http://onsemi.com 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 50 Vdc Collector−Base Voltage VCBO 50 Vdc Emitter−Base Voltage VEBO

2N5086

Contextual Info: 2N5086 2N5087* M A X IM U M RATINGS Symbol Value Unit C o lluctor-E m itter Voltage VcEO -5 0 Vdc Collector-Base Voltage v CBO -5 0 Vdc E m iter-B ase Voltage Ve b O - 3 .0 Vdc ic -5 0 m Adc = 25°C PD 625 5.0 mW m w rc Tote l Device D issipation r'fi T q = 25’C

2n5087

Contextual Info: 2N5086 2N5087* MAXIMUM RATINGS Rating Symbol Value U n it C o lie ctor-E m itter Voltage v CEO 50 Vdc Collector-Base Voltage VCBO 50 Vdc Em itter-Base Voltage v EBO 3.0 Vdc C o lle ctor C urrent - C ontinuous 'c 50 m Adc Total Device D issipation d T ^ = 25°C

MMBT5087

Abstract: BF254
Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

Contextual Info: 2N5087 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO=50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO VcEO Vebo lc Po Tj Tstg 50 50 3 50 625

Contextual Info: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE

10D3

Abstract: 2N5087
Contextual Info: 2N5087 2N5087 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-07-20 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse

2N5086

Abstract: 2N5087 CBVK741B019 F63TNR MMBT5086 MMBT5087 PN2222N
Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

hFE-200 to-92 npn

Abstract: 2N5087 2N5086 2n5088 transistor hFE-200 transistor PNP 2N5088 2N5089 hFE-200
Contextual Info: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.

2N5087 equivalent

Abstract: 2N5087 fairchild 741 2N5086 MMBT5086 MMBT5087 2n5087 fairchild
Contextual Info: 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 B SOT-23 E Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA. Sourced from Process 62.

Contextual Info: 2N5087 2N5087 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-07-20 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse

2N5087

Abstract: 2N collector characteristic curve 2N5087G 2N5087RLRA 2N5087RLRAG AN569
Contextual Info: 2N5087 Preferred Device Amplifier Transistor PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 50 Vdc Collector−Base Voltage VCBO 50 Vdc Emitter−Base Voltage

2n508

Abstract: 2N5086 2N5088 2N5089 2N5087 2N5089 power
Contextual Info: 2N5086 2N5088 2N5087 2N 5089 PHP . NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS -%. -C•-'■!■- -% Jy , I CASE T0-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN ÂP LOW NOISE PREAMPLIFIER CIRCUITS.

SOT-23 MARK 2Q

Abstract: BEL 167 transistor transistor k 2541 2N5086 2N5087 CBVK741B019 F63TNR MMBT5086 MMBT5087 PN2222N
Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor 2N5087 PNP Silicon COLLECTOR 3 Motorola Preferred Device 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage VCBO 50

2N5087

Abstract: transistors catalog motorola rectifier catalog
Contextual Info: 2N5087 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5087 Availability Online Store

2N4403 626

Abstract: 2n4401- 312 MPSa13 549 2N5087 DTD123YV 2n3904 2n3906 2SB1482 2sd2396 2sb1335a 2SC2389S
Contextual Info: Index Index 2N3904 2N3906 2N4124 2N4126 2N4401 2N4403 2N5087 2N5088 494 462 494 462 489 450 455 482 2SC1645S 220 2SC1740S 223 2SC1741 AS 228 2SC1741S 232 2SC1809S 237 2SC2058S 241 2SC2389S 246 2SC3271F 250 2SC3969 254 2SC4015 259 2SC4037 263 2SC4038 268 2SC4039 273

2n5088 transistor

Abstract: 2N6088 2N5088 2N5089
Contextual Info: L I< N AMER PHILIPS/DISCRETE SSE D i •" Bi bbSBTBl GG17SGb 7 2N5088 2N5089 T -a^ -ai SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary types are 2N5086/2N5087.

motorola an569 thermal

Abstract: 2N5087 motorola an569
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Tran sistor PNP Silicon 2N5087 COLLECTOR 3 Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C ollector-E m itter Voltage v CEO 50 Vdc C ollector-B ase Voltage VCBO 50 Vdc Vdc E m itter-B ase Voltage

2N5087

Abstract: 2N5086
Contextual Info: N AMER P H I L I P S / D I S C R E T E LIE D • bbSB^Bl DDEßlbE 37fl 2N5086 2N5087 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors in plastic TO-92 envelope intended fo r low-noise stages in audio equipm ent. C om plem entary types are 2 N 5 0 8 8 /2 N 5 0 8 9 .

LS 5087

Abstract: a5t5086
Contextual Info: TYPES 2N5086. 2N5087, A5T5086, A5T5087 P-N P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 2 Î. M A R C H 1973 SILECTt TRANSISTORS* FOR LOW-LEVEL, LOW-NOISE AUDIO AMPLIFIER APPLICATIONS • For Complementary Use with N-P-N Types 2N5209, 2N5210, A5T5209, A5T5210