MPS6523 Search Results

2n4249

Abstract: 2N4965 se7055 2N4250 2N244 2N4248 SE706 2N2443 2n4250 TO-106 2n3742
Contextual Info: TR A N SISTO RS—SMALL SIGNAL PNP LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VC EO PLASTIC PACKAGE TYPE VOLTS hpE MIN M IN -M A X NF hpE hFE v CEO h FE *C @ •c MIN - MAX mA mA dB @ MAX NF f dB kHz MAX f @ PACKAGE kHz MPS6523 25 150 @0.10

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS6523 14E O | 7 elt14 m ¿ 0007356 3 PNP EPITAXIAL SILICON TRANSISTOR T -29-21 AMPLIFIER TRANSISTOR • Coltector-Emltter Voltags: Vc£o =25V • Collector Dissipation: I Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: MPS 6520 thru’ MPS 6523 COMPLEMENTARY r- SILICON TRANSISTORS MPS6520, MPS6521 NPN and MPS6522, MPS6523 (PNP) are complementary silicon planar epitaxial transistors designed for general purpose amplifier applications and for complementary circuitry. ABSOLUTE MAXIMUM RATINGS

MPS6522

Abstract: mps-6522 MPS6520 MPS6521 MPS6523
Contextual Info: il il u iv ir w wv/<.w COMPLEMENTARY SILICON TRANSISTORS MPS6520, MPS6521 NPN and MPS6522, MPS6523 (PNP) are complementary silicon planar epitaxial transistors designed for general purpose amplifier applications and for complementary circuitry. ABSOLUTE MAXIMUM RATINGS

MPS6521-D equivalent

Abstract: MPS6523 1N916 MPS6521
Contextual Info: ON Semiconductort NPN MPS6521* PNP MPS6523 Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS *ON Semiconductor Preferred Device Rating Symbol Collector–Emitter Voltage

Contextual Info: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE

PN2222N

Abstract: CBVK741B019 F63TNR MPS6523 PN200
Contextual Info: MPS6523 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPS6522

Abstract: MPS6523 MPS6520 MPS6521
Contextual Info: MPS6522 MPS6523 V PHILIPS INTERNATIONAL SbE D I 711002b 00M25D4 H57 « P H I N - P 2 9 - Z / SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors in plastic TO-92 envelope intended for low-noise applications in audio equipment. Complementary types are MPS6520 and MPS6521.

MPS6520

Abstract: MPS6521 MPS6523
Contextual Info: MPS6520 MPS6521 PHILIPS INTERNATIONAL S bE D 711DÛSti 0 Q 4 2 5 D 2 bö4 H P H I N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N small-signal transistors in plastic TO-92 envelope intended for low-noise applications in audio equipment. Complementary types areMPS6522 and MPS6523.

PS6523

Contextual Info: S E M IC O N D U C T O R MPS6523 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. AbSOlUtG Maximum RâtinÇjS

828 npn

Abstract: MPS6523
Contextual Info: ON Semiconductort NPN MPS6521* PNP MPS6523 Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS *ON Semiconductor Preferred Device Rating Symbol Collector–Emitter Voltage

Contextual Info: S E M IC O N D U C T O R . MPS6523 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum RatinQS

MPS6522

Abstract: MPS6521 MPS6520 MPS6523
Contextual Info: N AMER PHILIPS/DISCRETE b'ìE D • bbS3T31 DOEÔGGS 721 I IAPX MPS6522 MPS6523 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors in plastic TO-92 envelope intended fo r low-noise applications in audio equipment. Complementary types are MPS6520 and MPS6521.

MPS6523

Abstract: MPS6522 mps65 MPS6520 MPS6521
Contextual Info: MPS6520, MPS6521 NPN SILICON MPS6522, MPS6523 PNP SILIC O N C O M PLEM EN T A R Y A M P L IF IE R T R A N SIST O R S SILIC O N A N N U L A R T R A N SIST O R S . . . designed for general-purpose amplifier applications and for com ­ plementary circuitry.

Contextual Info: MPS6523 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPS6520

Abstract: MPS6521 MPS6522 MPS6523 MPS 6520
Contextual Info: MPS 6520 thru’ MPS 6523 COMPLEMENTARY SILICON TRANSISTORS MPS6520, MPS6521 NPN and MPS6522, MPS6523 (PNP) are complementary silicon planar epitaxial transistors designed for general purpose amplifier applications and for complementary circuitry. ABSOLUTE MAXIMUM RATINGS

PN4250

Contextual Info: hhE □¿ hO hO Q DETTOSI I . D iscrete POW ER & Sig n a l Technologies National m ^W Sem iconductor'" V Device No. 2N5086 2N5087 Case Style TO-92 92 TO-92 (92) MPS6523 TO-92 (92) PN4249 TO-92 (92) PN4250 PN4250A CBO V CEO V EBO (V) Min (V) Min (V) Min SO

MPS6521 equivalent

Abstract: MPS6523 MPS6521 MPS6521RLRA 1N916 AN569 MPS6521G MPS6521RLRAG MPS6523G K3050
Contextual Info: MPS6521 NPN MPS6523 (PNP) MPS6521 is a Preferred Device Amplifier Transistors Features • Voltage and Current are Negative for PNP Transistors • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage

Contextual Info: N AUER PHILIPS/DISCRETE b'lE D • bb53^31 IAPX 002flDD3 M PS6520 MPS6521 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N small-signal transistors in plastic TO-92 envelope intended for low-noise applications in audio equipment. Complementary types areMPS6522 and MPS6523.

MPS6523

Abstract: PN200
Contextual Info: MPS6523 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: ON Semiconductort NPN MPS6521* PNP MPS6523 Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS *ON Semiconductor Preferred Device Rating Symbol Collector −Emitter Voltage

SS9014

Abstract: MPSA18 BC550 low noise transistors SS9018 MPS4250 "cross-reference" BC238 BC239 BC212 KSP6521 MPS4250A
Contextual Info: Small Signal Low Noise Transistors Part No. and Polarity NPN NF Max. hFE Condition Frequency V CEO MPS6523 MPS4250A MPS4250 PN4248 PN4250 BC212 BC308 BC309 BC560 SS9015 3.0 3.0 2.0 2.0 1.5 3.0 2.0 10.0 10.0 10.0 4.0 3.0 2.0 10.0 10.0 Audio Audio Audio Audio

MPS6520

Abstract: MPS6520 equivalent AN569 in Motorola Power Applications MPS3905 MPS3906 MPS6521 MPS6523 1N916 MPS3904 motorola an569 thermal
Contextual Info: MOTOROLA Order this document by MPS6520/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors COLLECTOR 3 NPN 2 BASE MPS6520 MPS6521* 1 EMITTER PNP MPS6523 COLLECTOR 3 Voltage and current are negative for PNP transistors 2 BASE *Motorola Preferred Device 1 EMITTER

MPS6521

Abstract: MPS6523 MPS6520 mps-6521 mps6521 motorola
Contextual Info: MAXIMUM RATINGS Rating Symbol NPN PNP Unit C o lle cto r-E m itte r V o ltage MPS6520, MPS6521 MPS6523 v CEO Collector-Base Voltage MPS6520, MPS6521 MPS6523 VCBO Em itter-Base V o ltage vebo 4.0 Vdc C o lle ctor C u rrent — C o n tin u o u s 'c 100 m A dc