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    350MW Search Results

    350MW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM4819MBD/NOPB Texas Instruments 350mW Audio Power Amplifier with Shutdown Mode Visit Texas Instruments Buy
    LM4819MMX/NOPB Texas Instruments 350mW Audio Amplifier with Shutdown Mode 8-VSSOP -40 to 85 Visit Texas Instruments Buy
    LM4819MX/NOPB Texas Instruments 350mW Audio Amplifier with Shutdown Mode 8-SOIC -40 to 85 Visit Texas Instruments Buy
    LM4818MX/NOPB Texas Instruments 350mW Audio Power Amplifier with Shutdown Mode 8-SOIC -40 to 85 Visit Texas Instruments Buy
    LM4819MM/NOPB Texas Instruments 350mW Audio Amplifier with Shutdown Mode 8-VSSOP -40 to 85 Visit Texas Instruments Buy
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    350MW Price and Stock

    Eaton Cutler-Hammer E2KW3350MWW (ALTERNATE: E2KW3350MWW)

    1200V MINING MCCB 3P 350A MAG ONLY 1250-2500A TRIP RANGE | Eaton - Cutler Hammer E2KW3350MWW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS E2KW3350MWW (ALTERNATE: E2KW3350MWW) Bulk 5 Weeks 1
    • 1 $10021.53
    • 10 $9520.46
    • 100 $9520.46
    • 1000 $9520.46
    • 10000 $9520.46
    		Get Quote

    Ningbo connfly electronic CO LTD DS1034-03-50MWN8SS

    D-Sub; PIN: 50; socket; male; on PCBs; angled 90°; THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME DS1034-03-50MWN8SS 78 1
    • 1 $17.2
    • 10 $12.9
    • 100 $7.74
    • 1000 $7.74
    • 10000 $7.74
    		Buy Now

    350MW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LM4819 LM4819 350mW Audio Power Amplifier with Shutdown Mode Literature Number: SNAS133C LM4819 350mW Audio Power Amplifier with Shutdown Mode General Description Key Specifications The LM4819 is a mono bridged power amplifier that is capable of delivering 350mWRMS output power into a 16Ω load


    Original     		PDF LM4819 LM4819 350mW SNAS133C 350mWRMS

    ray 40

    Abstract: No abstract text available
    Text: Plug-In RAY-3+ RAY-3 Frequency Mixer Level 23 LO Power +23 dBm 0.07 to 200 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 350mW IF Current 40mA • excellent conversion loss, 5.53 dB typ.


    Original     		PDF 350mW 2002/95/EC) ray 40

    28438

    Abstract: M121747
    Text: Coaxial Frequency Mixer ZAY-1+ Level 23 LO Power +23 dBm 5 to 500 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 350mW IF Current 40mA • low conversion loss, 6.57 dB typ. • high L-R isolation, 40 dB typ. L-R & L-I


    Original     		PDF 350mW 2002/95/EC) 28438 M121747

    DEVICE MARKING CODE table

    Abstract: BZX84C47 BZX84C43 301 marking code sot-23 BZX84C43-7 Marking Code KEY zener diode marking code 30 Zener Diode SOT-23 marking B BZX84C51 J-STD-020A
    Text: BZX84C43 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE SPICE MODELS: BZX84C43 BZX84C47 BZX84C51 Features • · · · Planar Die Construction 350mW Power Dissipation Zener Voltages from 43V - 51V Ideally Suited for Automated Assembly Processes SOT-23 A · · ·


    Original     		PDF BZX84C43 BZX84C51 350mW BZX84C47 OT-23 OT-23, J-STD-020A DEVICE MARKING CODE table 301 marking code sot-23 BZX84C43-7 Marking Code KEY zener diode marking code 30 Zener Diode SOT-23 marking B BZX84C51 J-STD-020A

    MMBZ5223B

    Abstract: Zener Diode SOT-23 marking kh5 MMBZ5221B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B
    Text: MMBZ5221B - MMBZ5259B 350mW SURFACE MOUNT ZENER DIODE SPICE MODELS: MMBZ5221B MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B MMBZ5232B MMBZ5233B MMBZ5234B MMBZ5235B MMBZ5236B MMBZ5237B MMBZ5238B MMBZ5239B MMBZ5240B MMBZ5241B MMBZ5242B MMBZ5243B MMBZ5245B MMBZ5246B MMBZ5248B MMBZ5250B


    Original     		PDF MMBZ5221B MMBZ5259B 350mW MMBZ5223B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B Zener Diode SOT-23 marking kh5 MMBZ5229B MMBZ5230B MMBZ5231B

    Untitled

    Abstract: No abstract text available
    Text: DB3-DB3TG 350mW Bi-directional Trigger Diodes Features • • • • • • • • • • VBO : 32V Version Low break-over current DO-35 package JEDEC Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and


    Original     		PDF 350mW DO-35 MIL-STD-202, DO-35

    Untitled

    Abstract: No abstract text available
    Text: New Au d i o I n t e r fa c e I C A N 2 9 0 6 F J M • Overview 12 22 34 33 11 0.40 0.10 SEATING PLANE 11 44 0.48 5.00±0.10 12 44 (1.10) 0. 1 22 ■ Features ●Speaker amplifier. • BTL amplifier (350mW 8Ω Vcc=3.3V) ●Built-in power-save function.


    Original     		PDF 350mW AN2906FJM

    all type zener diode code voltage

    Abstract: CMPZ4625 CMPZ4616 5 volts ZENER DIODE zener diode marking code 30 CMPZ4614 CMPZ4615 CMPZ4617 CMPZ4618 CMPZ4619
    Text: Central CMPZ4614 THRU CMPZ4627 TM Semiconductor Corp. SURFACE MOUNT 350mW LOW NOISE SILICON ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ4614 Series types are high quality silicon zener diodes designed for low leakage, low current and low noise applications.


    Original     		PDF CMPZ4614 CMPZ4627 350mW OT-23 200mA CMPZ4622* CMPZ4623 CMPZ4624* CMPZ4625 all type zener diode code voltage CMPZ4625 CMPZ4616 5 volts ZENER DIODE zener diode marking code 30 CMPZ4614 CMPZ4615 CMPZ4617 CMPZ4618 CMPZ4619

    Untitled

    Abstract: No abstract text available
    Text: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF KST5551 350mW OT-23 2N5551

    MMBT3906 UTC

    Abstract: No abstract text available
    Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


    Original     		PDF MMBT3906 350mW MMBT3904 OT-23 QW-R206-013 MMBT3906 UTC

    T9SV1K15-12

    Abstract: No abstract text available
    Text: General Purpose Relays Power Relays Potter & Brumfield Power PCB Relay T9S Solar n 1 pole 35A, 1 form A NO contact gap >1.5mm n 350mW hold power n Ambient temperature up to 85°C at 35A n The appliance is able to meet VDE V 0126-1-1 n Product in accordance to IEC 60335-1


    Original     		PDF n350mW nEN61095: 2500Vrms 4000Vrms E22575 T9SV1K15-12 12VDC T9SV1K15-12

    Untitled

    Abstract: No abstract text available
    Text: MMBD4448H 0.25A Surface-mount Switching Diode Voltage range 80 Volts 350mW Power Dissipation SOT-23 FEATURES 0.020 0.51 0.015(0.37) Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications


    Original     		PDF MMBD4448H 350mW OT-23 OT-23,

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX84C27 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		PDF BZX84C27 OT-23 350mW

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX84C7V5 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		PDF BZX84C7V5 OT-23 350mW

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX84C4V3 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		PDF BZX84C4V3 OT-23 350mW

    BZX84C18

    Abstract: No abstract text available
    Text: Product specification BZX84C18 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		PDF BZX84C18 OT-23 350mW BZX84C18

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX84C3V3 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		PDF BZX84C3V3 OT-23 350mW

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX84C16 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		PDF BZX84C16 OT-23 350mW

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX84C2V4 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		PDF BZX84C2V4 OT-23 350mW

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX84C11 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		PDF BZX84C11 OT-23 350mW

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX84C20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		PDF BZX84C20 OT-23 350mW

    65060

    Abstract: No abstract text available
    Text: Coaxial ZMY-2+ ZMY-2 Frequency Mixer Level 23 LO Power +23 dBm 10 to 1000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 350mW IF Current 40mA • low conversion loss, 6.89 dB typ. • high isolation, 40 dB typ. L-R, 35 dB typ. L-I


    Original     		PDF 350mW 2002/95/EC) 65060

    LM4819

    Abstract: LM4819M LM4819MM M08A
    Text: LM4819 350mW Audio Power Amplifier with Shutdown Mode General Description Key Specifications The LM4819 is a mono bridged power amplifier that is capable of delivering 350mWRMS output power into a 16Ω load or 300mWRMS output power into an 8Ω load with 10%


    Original     		PDF LM4819 350mW LM4819 350mWRMS 300mWRMS LM4819M LM4819MM M08A

    ZFY-11-S

    Abstract: ZFY-11
    Text: Coaxial Frequency Mixer ZFY-11 Level 23 LO Power +23 dBm 10 to 2400 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 350mW IF Current 40mA • low conversion loss, 7.40 dB typ. • wideband, 10 to 2400 MHz


    Original     		PDF ZFY-11 350mW ZFY-11-S ZFY-11-S ZFY-11