2N5086 Search Results

PN4250

Abstract: 2N5086 MPS6523 MPSH81 PN4249 PN4250A
Contextual Info: This I D" Material In . Discrete POWER & Signal Technologies □ National t-1 Se mi c o n d u c t o r ' “ fc-1 PNP Low Level Amplifiers Lü □ a Copyrighted □ jr □ x: -J V Device No. 2N5086 ru -C By Its Respective ro ho TO-92 92 2NS087 TO-92 (92)

2N5089

Abstract: 2N5087 2N5086
Contextual Info: 2N5086 _ 2N 5087 _ - PHILIPS INTERNATIONAL SbE » • 711005b D0M2t.74 751 « P H I N " T -Z ^ ^ f SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors in plastic T O -9 2 envelope intended fo r low -noise stages in au d io equipm ents

2N5088 equivalent

Abstract: 2N5088 2n5088 transistor 2N5089 2N5087 ST transistor 2N5089 equivalent 2N5089 NPN 2N5089 power ST 024
Contextual Info: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.

2N5088

Abstract: 2N5089 2N5088 equivalent 2N5089 transistor 2n5088 transistor ST 024 2N5086 2N5087 st2n5088 2N5088 power
Contextual Info: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.

101B

Abstract: 2N5086
Contextual Info: Transistors 2N5086 USHA INDIA LTD AMPLIFIER TRANSISTOR TO-92 * Collector-Emitter Voltage: VCEo=50V • Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

2N5086

Contextual Info: 2N5086 2N5087* M A X IM U M RATINGS Symbol Value Unit C o lluctor-E m itter Voltage VcEO -5 0 Vdc Collector-Base Voltage v CBO -5 0 Vdc E m iter-B ase Voltage Ve b O - 3 .0 Vdc ic -5 0 m Adc = 25°C PD 625 5.0 mW m w rc Tote l Device D issipation r'fi T q = 25’C

2n5087

Contextual Info: 2N5086 2N5087* MAXIMUM RATINGS Rating Symbol Value U n it C o lie ctor-E m itter Voltage v CEO 50 Vdc Collector-Base Voltage VCBO 50 Vdc Em itter-Base Voltage v EBO 3.0 Vdc C o lle ctor C urrent - C ontinuous 'c 50 m Adc Total Device D issipation d T ^ = 25°C

MMBT5087

Abstract: BF254
Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

Contextual Info: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE

2N5086

Abstract: 2N5087 CBVK741B019 F63TNR MMBT5086 MMBT5087 PN2222N
Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

hFE-200 to-92 npn

Abstract: 2N5087 2N5086 2n5088 transistor hFE-200 transistor PNP 2N5088 2N5089 hFE-200
Contextual Info: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.

2N5087 equivalent

Abstract: 2N5087 fairchild 741 2N5086 MMBT5086 MMBT5087 2n5087 fairchild
Contextual Info: 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 B SOT-23 E Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA. Sourced from Process 62.

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5086 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collsctor-Emltter Voltage: Vao =50V • Collector Dissipation: Pe (max)=625mW

Contextual Info: i i N ANER PHILIPS/DISCRETE b=JE » bb53T31 0DSfllb5 D67 2N5088 APX SILICON PLANAR EPITAXIAL TRANSISTOR NPN small-signal transistor in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary type is 2N5086. QUICK REFERENCE DATA

SOT-23 MARK 2Q

Abstract: BEL 167 transistor transistor k 2541 2N5086 2N5087 CBVK741B019 F63TNR MMBT5086 MMBT5087 PN2222N
Contextual Info: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

2n5088 transistor

Abstract: 2N6088 2N5088 2N5089
Contextual Info: L I< N AMER PHILIPS/DISCRETE SSE D i •" Bi bbSBTBl GG17SGb 7 2N5088 2N5089 T -a^ -ai SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary types are 2N5086/2N5087.

2N5087

Abstract: 2N5086
Contextual Info: N AMER P H I L I P S / D I S C R E T E LIE D • bbSB^Bl DDEßlbE 37fl 2N5086 2N5087 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors in plastic TO-92 envelope intended fo r low-noise stages in audio equipm ent. C om plem entary types are 2 N 5 0 8 8 /2 N 5 0 8 9 .

k 4145 transistor

Abstract: Q2N5086 2N5086 MOB10
Contextual Info: SAMSUNG SEMICONDUCTOR INC 2N5086 14E D J 0 Q G 7 3 ,7 S M PNP EPITAXIAL SILICON TRANSISTOR , T-29-21 AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: V ceo =50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (To =25°C) Characteristic

Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. 2N4972 2N5086 2N5067 2N5142 2N5143 ^CBO ^CEO V EBO (V) Min (V) Min (V) Min 60 40 5 60 50 20 20 50 50 20 20 3 3 4 4 'c Pd (W) (A) 0Tc=25"c 0.625 0.625 0.625 0.625 0.625 0.6 0.05 0.05 ^CB ^CES

2N5086

Abstract: 2N5087
Contextual Info: 2N5086/5087 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • CoHector-Emitter VoHage: VCeo“ 50V • Collector Dissipation: Pc max »625mW ABSOLUTE MAXIMUM RATINGS (TA-25t:) C haracteristic Sym bol Collector-Base Voltage Collector-Emttter Voltage

LS 5087

Abstract: a5t5086
Contextual Info: TYPES 2N5086. 2N5087, A5T5086, A5T5087 P-N P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 2 Î. M A R C H 1973 SILECTt TRANSISTORS* FOR LOW-LEVEL, LOW-NOISE AUDIO AMPLIFIER APPLICATIONS • For Complementary Use with N-P-N Types 2N5209, 2N5210, A5T5209, A5T5210

2NS087

Abstract: 2N5087 NATIONAL SEMICONDUCTOR 2NS086 2N5086 2N5087 MMBT5086 MMBT5087 T092 0013581
Contextual Info: 2N5086 / MMBT508612N50871 MMBT5087 Discrete POWER & Sign al Technologies _ Na tional Semiconductor~ 2N5086 2N5087 MMBT5086 MMBT5087 PNP General Purpose Amplifier T h is d evice is d esigned fo r low level, high gain, low noise general p u rp o s e a m p lifie r a p p lic a tio n s a t c o lle c to r c u rre n ts to 50 mA.

2N5087

Abstract: transistor 2N5086 2N5087 equivalent 2N5086 2n5088 transistor 2N5088 2N5089
Contextual Info: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.

Contextual Info: 2N5209 • 2N5210 NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS 1 CASE TO-92A THE 2N5209, 2N5210 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP LOW NOISE PREAMPLIFIERS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N5086, 2N5087- '0 EBC ABSOLUTE MAXIMUM RATINGS