BSD113D Search Results

NR421DS

Abstract: 455KHZ NR461 88-108
Contextual Info: 'NATL SE M^O ND z z {DISCRETE} 650 î 130 NATL SEMICOND, z bSD113D DISCRETE D D 3 S t il 7 28C 35617 National Semiconductor Q. <0 s i f ic EflC D 1 T '- 'Z / ' z NR461ÌNPN) low-noise RF/IF transistor features ITI package and lead coding • • Low Ccb for excellent RF stability

MMBT201

Contextual Info: NATL SEMICGND DISCRETE H E D I bSD113D □ U3V d J. d U | • o National Semiconductor * Z IO T-2 7-/3 3 to o MMBT201 PN201 TUG/10100-5 PNP General Purpose Amplifier . Electrical Characteristics Ta = 25°C unless otherwise noted Min Parameter Symbol Max Units

n 5j

Abstract: NJ 20 U1 W NSDu95 SK-I 10
Contextual Info: NATL SEMICOND {DISCRETE} 2fl bSD113D 00354b5 L T-33-31 This Material C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r NATL SENICOND {DISCRETE} 50 D E | b S 0 1 1 3 G DC^SMbt fl | ~ ^ T-33-31 NATL I« SZ ÌEMI C O N D , DISCRETE 28C

Contextual Info: Surface Mount Diodes bSD113D Discrete POWER & Signal Technologies National Sem iconductor " Surface Mount Diodes ÜÜM0MÖ5 Computer Diodes by Descending Bv LEADLESS GLASS PACKAGE 71S Device No. Package No. FDLL914 LL-34 (V) Min Ir (nA) Max 100 25 Bv C V

2N3819 NATIONAL SEMICONDUCTOR

Abstract: National 2N3819 2n3819 surface mount 2N5247 MMBFJ304 MMBFJ305 N CHANNEL JFET 2N3819 2N5951 PN4416 2N5246
Contextual Info: bflE D • bSD113D □Q3cm cn 5S7 NSCS NATL SEMICOND DISCRETE TO -52 N Channel DG V p @ V DslB D ¥ GSS Device m (V) Min (V) Min Max 2N3819 25 RelYfsl Re(Yos) (mmho) @ f (nmho) @ f im Ciss Crss (PF) (PF) Max Max Min (MHz) Max (MHz) 8 15 2 1.6 100 NF (dB)@ Rg = 1k

NDP505A

Abstract: NDP705AE NDP605A NDP405B NDP510A NDP510AE NDP510B NDP610A NDP610AE NDP610B
Contextual Info: •NSCS 741 0031460 bSD113D TO-220AB DMOS N Channel N Channel rDS on @ ^ G S (Volts) Min Device (ma) Max 100 NDP710A •d rDS(on) @ lu/^GS Po (Volts) Min (Amps) (Watts) (Amps/Volts) Max Max 38 21/10 42 42 21/10 40 150 60 NDP710B ■ NDP610A 65 13/10 26 80

92PU45

Abstract: SE9300 100C DOBS435
Contextual Info: NATL SEHICOND {DISCRETE* 5fi DE | bSD113D 00BS4B2 2 | NPN Transistors This Material Copyrighted By Its Respective Manufacturer SEMICOND 6501130 2fl {DISCRETE} NATL SEMICOND, DE~| b S 0 1 1 3 D in o in o in o 8 8 in o in o o o o o o O 200 200 in ' in in in

MMBT4209

Abstract: 2N4209 MMBT3646 transistor t0 92 2N5771 MMBT5771 PN2369 PN2369A PN3646 PN4275
Contextual Info: bflE » • bSD113D □□3TS31 7 ME High Speed Saturated Switching Transistors continued Devices VcEOIauit) (Volts) Min 15 ton (ns) Max mA M M BT3646 18 28 PN2369 12 18 PN2369A 12 PN3646 18 NPN PUP PN4275 12 10 hFE @ t0n @ < c (ns) Max INSCS CD V C E (tat)« lc Iß

MMBT4209

Contextual Info: bflE T> m bSD113D D03TS31 High Speed Saturated Switching Transistors continued Devices VcEO(siot) (Volts) Min 15 NPN ion PHP h FE @ I j V c E(ta l)«lc *T mA (MHz) Mfn P o (Amb) Package (mW) @25°C MMBT3646 18 28 300 30 30 0.2 30 3.0 350 TO-236* 350 PN2369

B5G1

Abstract: BSS138
Contextual Info: National May 1995 Semiconductor~ BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products

NDB7052L

Abstract: NDP7052L
Contextual Info: %/ National Semiconductor~ A p r il 1 9 9 6 A D V A N C E IN F O R M A T IO N NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode p o w e r fie ld effect transistors are produced using

NDP506A

Abstract: zener diode 4B3 NDB506B NDB506A NDP506B
Contextual Info: National Semiconductor M a y 19 95 " NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Tf 227

Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
Contextual Info: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector

TF411

Abstract: national PN2222A IC VS 1307 I-00 MMBT2222A MMPQ2222 NMT2222 PN2222A PZT2222A TR46
Contextual Info: PN2222AI MMBT2222A I MMPQ2222 I NMT2222 I PZT2222A Discrete POW ER & Signa l Technologies National S e m i c o n d u c t o r ” MMBT2222A PN2222A SOT-23 PZT2222A B SOT-223 Mark: 1P NMT2222 MMPQ2222 NPN General Purpose Amplifier This device is fo r use as a medium power amplifier and

ksd113

Abstract: NSDU57 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92
Contextual Info: PNP Transistors V cbo V Min v CEO (V) Min Vebo (V) Min 2N4030 TO-39 60 60 5 2N4031 TO-39 80 60 80 60 5 5 50 50 50 50 60 50 TO-39 80 80 5 50 60 also Avail. JA N /T X /V Versions 2N4036 TO-39 90 85 TO-39 60 40 2N4314 TO-39 90 65 7 20 60 10 25 40 30 40 70 100

MMBT3906

Abstract: model of 2n3906 2N3906 MMBT3906 spice 2n3906 2a E5 sot223 MMBT3906 SOT-23
Contextual Info: 2N 39061 MMBT3906 I MMPQ39061 PZT3906 Discrete POW ER & Signal Technologies National Semi conduct or MMBT3906 2N3906 SOT-23 B M a rk : 2A PZT3906 MMPQ3906 SOT-223 SOIC-16 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch­

MMBT3946

Abstract: MMBT3415 MMBTA20
Contextual Info: Surface Mount Devices National Semiconductor Surface Mount Transistors CO m t-4 O O 2 General Purpose Amplifiers and Switches—NPN C a se Style VCBO V Min VCEO (V) Min VEBO (V) Min TO-236 (49) 75 45 6 MMBT100A TO-236 (49) 75 45 6 50 60 300 100 220 MMBT101

NDC7003P

Abstract: 034A
Contextual Info: National Semiconductor" M arch 1 9 9 6 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

BD371C-10

Abstract: BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6
Contextual Info: NATL S E M IC O N D H E D IS C R E T E D • tS0 1 1 3 D 0Q371SB fi 1 S -a CM T" O z CM eg Y~ o CM r* ST -f u T-03-01 « e 3 m o o s i o « 0 *c a) /) c o z Sï (/) « fl «?&2 <D » <D o f X a Jr i o Û) 8 S to CO LU o CL k. w o Q. m S's U o o o o o o o o

MPSA18 BC550

Abstract: marking 2C marking 2D BC846 National Semiconductor Discrete catalog MPSA18 BC558 BC184 BC550 tr bc548 2N3117 bc857 to 92 2N5210 national
Contextual Info: . Low Noise Am plifiers t,8E J> r Device VcEQ «l>t (Volte) Min 65 NPN Min Max BC546 110 450 BC846 110 300 Typ T0-92(97) 1,2C 10 300 Typ TO-236* 1,2C Notes 2 75 475 2 10 300 Typ TO-92(97) 1,2C 475 2 10 300 Typ TO-236* 1,2C 100 500 0.01 3 60 2N2484 TO-18 2F

DG40B

Abstract: DY TRANSISTOR PN918
Contextual Info: u c t or" PN918 C MMBT918 TO-92 SOT-23 B M ark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. A b s o lu t e M a x im u m R

2N5458 NATIONAL SEMICONDUCTOR

Abstract: 2N5457 2N5459 2n5458
Contextual Info: Semiconductor 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 SOT-23 S Mark: 6 D / 6 1 S / 6 L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from

Contextual Info: BAS16 Discrete POWER & Signal Technologies & National Semiconductor" BAS16 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol t a =25 c um^s otherwise noted Parameter Value Units Wiv Working Inverse Voltage

2NS087

Abstract: 2N5087 NATIONAL SEMICONDUCTOR 2NS086 2N5086 2N5087 MMBT5086 MMBT5087 T092 0013581
Contextual Info: 2N5086 / MMBT508612N50871 MMBT5087 Discrete POWER & Sign al Technologies _ Na tional Semiconductor~ 2N5086 2N5087 MMBT5086 MMBT5087 PNP General Purpose Amplifier T h is d evice is d esigned fo r low level, high gain, low noise general p u rp o s e a m p lifie r a p p lic a tio n s a t c o lle c to r c u rre n ts to 50 mA.