IRF64 Search Results

IRF64 Price and Stock

Filter by Manufacturer


Infineon Technologies AG IRF640NSTRLPBF MOSFET N-CH 200V 18A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF640NSTRLPBF	Cut Tape	19,614		1	1 $2.1 10 $1.346 100 $2.1 1000 $2.1 10000 $2.1	Buy Now
	IRF640NSTRLPBF	Digi-Reel	19,614		1	1 $2.1 10 $1.346 100 $2.1 1000 $2.1 10000 $2.1	Buy Now
	IRF640NSTRLPBF	Reel	19,200		800	1 - 10 - 100 - 1000 $0.68629 10000 $0.58675	Buy Now
Avnet Americas	IRF640NSTRLPBF	Reel	800	18 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
	IRF640NSTRLPBF	Ammo Pack		16 Weeks, 3 Days	1	1 $1.69 10 $1.4 100 $1.16 1000 $1.16 10000 $1.16	Buy Now
	IRF640NSTRLPBF	Reel		10 Weeks	800	1 - 10 - 100 - 1000 $0.49096 10000 $0.47531	Buy Now
Mouser Electronics	IRF640NSTRLPBF					1 $1.75 10 $1.24 100 $0.914 1000 $0.633 10000 $0.586	Get Quote
Arrow Electronics	IRF640NSTRLPBF		1,600	18 Weeks	800	1 - 10 - 100 - 1000 $0.5969 10000 $0.5595	Buy Now
	IRF640NSTRLPBF		800	18 Weeks	800	1 - 10 - 100 - 1000 $0.53 10000 $0.5016	Buy Now
	IRF640NSTRLPBF	Cut Strips	554	18 Weeks	1	1 $1.5149 10 $1.123 100 $0.8411 1000 $0.6029 10000 $0.6029	Buy Now
Newark	IRF640NSTRLPBF	Cut Tape	4,316		1	1 $1.69 10 $1.4 100 $1.16 1000 $1.07 10000 $1.07	Buy Now
	IRF640NSTRLPBF	Reel			800	1 - 10 - 100 - 1000 $0.717 10000 $0.695	Buy Now

RS	IRF640NSTRLPBF	Bulk			10	1 - 10 $1.33 100 $1.26 1000 $1.13 10000 $1.13	Get Quote
TME	IRF640NSTRLPBF		752		1	1 $1.446 10 $0.801 100 $0.614 1000 $0.499 10000 $0.499	Buy Now
Chip 1 Exchange	IRF640NSTRLPBF		40,414			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip1Stop	IRF640NSTRLPBF	Cut Tape	2,131			1 $1.08 10 $0.89 100 $0.719 1000 $0.48 10000 $0.442	Buy Now
EBV Elektronik	IRF640NSTRLPBF		3,200	19 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IRF640NSTRLPBF		3,200		1	1 - 10 - 100 - 1000 $0.5903 10000 $0.5463	Buy Now
Win Source Electronics	IRF640NSTRLPBF		433,372			1 - 10 - 100 - 1000 $0.3731 10000 $0.3731	Buy Now
Vishay Siliconix IRF640STRRPBF MOSFET N-CH 200V 18A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF640STRRPBF	Cut Tape	1,461		1	1 $3.77 10 $2.467 100 $3.77 1000 $3.77 10000 $3.77	Buy Now
	IRF640STRRPBF	Digi-Reel	1,461		1	1 $3.77 10 $2.467 100 $3.77 1000 $3.77 10000 $3.77	Buy Now
	IRF640STRRPBF	Reel	800		800	1 - 10 - 100 - 1000 $1.34181 10000 $1.34181	Buy Now
Vishay Siliconix IRF644PBF MOSFET N-CH 250V 14A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF644PBF	Tube	1,055		1	1 $2.46 10 $2.46 100 $2.46 1000 $0.79674 10000 $0.69712	Buy Now
RS	IRF644PBF	Bulk			1,000	1 - 10 - 100 - 1000 $2.9 10000 $2.75	Get Quote
New Advantage Corporation	IRF644PBF		3,250		1	1 - 10 - 100 $0.6574 1000 $0.6574 10000 $0.6574	Buy Now
Vishay Siliconix IRF640STRLPBF MOSFET N-CH 200V 18A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF640STRLPBF	Digi-Reel	890		1	1 $2.93 10 $1.9 100 $2.93 1000 $2.93 10000 $2.93	Buy Now
	IRF640STRLPBF	Cut Tape	890		1	1 $2.93 10 $1.9 100 $2.93 1000 $2.93 10000 $2.93	Buy Now
	IRF640STRLPBF	Reel	800		800	1 - 10 - 100 - 1000 $1.00303 10000 $0.88788	Buy Now
Vishay Siliconix IRF644STRRPBF MOSFET N-CH 250V 14A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF644STRRPBF	Digi-Reel	605		1	1 $4.7 10 $3.113 100 $4.7 1000 $4.7 10000 $4.7	Buy Now
	IRF644STRRPBF	Cut Tape	605		1	1 $4.7 10 $3.113 100 $4.7 1000 $4.7 10000 $4.7	Buy Now

Find more IRF64 price and stock on Findchips.com

IRF64 Datasheets (260)

Part	Manufacturer	Description	Datasheet Type	PDF
IRF640	Fairchild Semiconductor	18A, 200V, 0.180 ?, N-Channel Power MOSFETs	Original	PDF
IRF640	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF
IRF640	Intersil	18A, 200V, 0.180 ?, N-Channel Power MOSFETs	Original	PDF
IRF640	On Semiconductor	Power Field Effect Transistor	Original	PDF
IRF640	Philips Semiconductors	N-channel TrenchMOS transistor	Original	PDF
IRF640	STMicroelectronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 18A TO-220	Original	PDF
IRF640	STMicroelectronics	N-Channel 200V - 0.150 Ohm - 18A TO-220-TO-220FP MESH OVERLAY MOSFET	Original	PDF
IRF640	STMicroelectronics	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS	Original	PDF
IRF640	STMicroelectronics	N-CHANNEL 200V - 0.150 Ohm - 18A TO-220-TO-220FP	Original	PDF
IRF640	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF640	FCI	POWER MOSFETs	Scan	PDF
IRF640	Frederick Components	Power MOSFET Selection Guide	Scan	PDF
IRF640	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRF640	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF

IRF640	International Rectifier	TO-220 N-Channel HEXFET Power MOSFET	Scan	PDF
IRF640	International Rectifier	HEXFET Power Mosfet	Scan	PDF
IRF640	Intersil	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 200V, 18A, Pkg Style TO-220AB	Scan	PDF
IRF640	Motorola	Switchmode Datasheet	Scan	PDF
IRF640	Motorola	European Master Selection Guide 1986	Scan	PDF
IRF640	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

...

IRF64 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 68 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 35 • Simple Drive Requirements Qgd (nC) Configuration	Original	PDF	IRF644, SiHF644 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRF640 applications note Abstract: IRF640 circuit Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration	Original	PDF	IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit
IRF646 Abstract: TB334 Text: IRF646 Data Sheet January 2002 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET Features • 14A, 275V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	PDF	IRF646 TA17423. TB334 IRF646 TB334
Untitled Abstract: No abstract text available Text: PD - 94871 IRF644PbF • Lead-Free 12/5/03 Document Number: 91039 www.vishay.com 1 IRF644PbF Document Number: 91039 www.vishay.com 2 IRF644PbF Document Number: 91039 www.vishay.com 3 IRF644PbF Document Number: 91039 www.vishay.com 4 IRF644PbF Document Number: 91039	Original	PDF	IRF644PbF O-220AB 12-Mar-07
IRF640 Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES	Original	PDF	IRF640 IRF640FP O-220/FP IRF640F O-220 IRF640 IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
Untitled Abstract: No abstract text available Text: PD - 95116 IRF644SPbF • Lead-Free Document Number: 91040 3/16/04 www.vishay.com 1 IRF644SPbF Document Number: 91040 www.vishay.com 2 IRF644SPbF Document Number: 91040 www.vishay.com 3 IRF644SPbF Document Number: 91040 www.vishay.com 4 IRF644SPbF Document Number: 91040	Original	PDF	IRF644SPbF 08-Mar-07
Untitled Abstract: No abstract text available Text: PD - 94107B IRF644N IRF644NS IRF644NL Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l Fifth Generation HEXFET Power MOSFETs from	Original	PDF	94107B IRF644N IRF644NS IRF644NL 08-Mar-07
Untitled Abstract: No abstract text available Text: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRF644B/IRFS644B O-220 FP001 O-220F IRFS644B FP001
MOSFET 640N Abstract: IRF640NS irf640* spice irf640n circuit using irf640n Text: IRF640N/IRF640NS/IRF640NL N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER	Original	PDF	IRF640N/IRF640NS/IRF640NL O-263 O-262 O-220 100oC, MOSFET 640N IRF640NS irf640* spice irf640n circuit using irf640n
Untitled Abstract: No abstract text available Text: $GYDQFHG 3RZHU 026 7 IRF644S FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.28Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 14 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V	Original	PDF	IRF644S
TB334 Abstract: IRF646 Text: IRF646 Data Sheet Title F64 bt A, 5V, 80 m, Cha el wer OST utho June 1999 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	PDF	IRF646 IRF646 TB334
UC60 Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: IRF643 CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	O-220AB IRF643 UC60
irf640 Abstract: IRF640FP IRF640 P CHANNEL MOSFET Text: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES	Original	PDF	IRF640 IRF640FP O-220/FP IRF640F O-220 irf640 IRF640FP IRF640 P CHANNEL MOSFET
irf640 Abstract: 5d surface mount diode IRF640L IRF640S SiHF640S SiHF640S-E3 power MOSFET IRF640 IRF640SPBF Text: IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D D2PAK (TO-263) I2PAK (TO-262)	Original	PDF	IRF640S, IRF640L, SiHF640S SiHF640L O-263) O-262) 18-Jul-08 irf640 5d surface mount diode IRF640L IRF640S SiHF640S-E3 power MOSFET IRF640 IRF640SPBF

IRF640PBF Abstract: IRF640 SiHF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3 Text: IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 70 • Fast Switching Qgs (nC) 13 • Ease of Paralleling 39 • Simple Drive Requirements Qgd (nC) Configuration	Original	PDF	IRF640, SiHF640 O-220 O-220 50lectual 18-Jul-08 IRF640PBF IRF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3
IRF640B Abstract: irfs640b IRF series Text: IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRF640B/IRFS640B IRF640B irfs640b IRF series
IRF644B Abstract: IRFS644B IRF series mosfet irf 150 Text: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	IRF644B/IRFS644B O-220 IRF644B IRFS644B IRF series mosfet irf 150
IRF640 Abstract: IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco Text: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■	Original	PDF	IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
IRF640 Abstract: IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97 Text: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■	Original	PDF	IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
IRF644N Abstract: IRF644NL IRF644NS SiHF644N SiHF644N-E3 SiHF644NS SiHF644NS-E3 Text: IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 250 V RDS(on) (Ω) VGS = 10 V • Dynamic dV/dt Rating 0.240 RoHS* • 175 °C Operating Temperature	Original	PDF	IRF644N, IRF644NS, IRF644NL, SiHF644N SiHF644NS SiHF644NL O-262) O-220 O-263) 18-Jul-08 IRF644N IRF644NL IRF644NS SiHF644N-E3 SiHF644NS-E3
Untitled Abstract: No abstract text available Text: IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.28 68 Qgs (nC) 11 Qgd (nC) 35 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D S G • Halogen-free According to IEC 61249-2-21	Original	PDF	IRF644S, SiHF644S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
irf6401 Abstract: IRF640R IRF642R 640r IFIF643R IRF641R IRF643R Text: Rugged Power M OSFETs_ IRF640R, IRF641R, IRF642R, IRF643R File Num ber 2010 Avalanche Energy Rated N-Channel Power MOSFETs 1 6 A a n d rDs on N -C H A N N E L E N H A N C E M E N T M O D E 18A , 2 0 0 V , 1 5 0 V = 0 .1 8 0 a n d 0 .2 2 0	OCR Scan	PDF	IRF640R, IRF641R, IRF642R, IRF643R 92CS-42658 IRF642R IFIF643R F640R irf6401 IRF640R 640r IRF641R IRF643R
Untitled Abstract: No abstract text available Text: N-CHANNEL POWER MOSFETS IRF640/641 FEATURES • Lower R d s io n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability	OCR Scan	PDF	IRF640/641 IRF640 IRF641
IRF644A Abstract: No abstract text available Text: IRF644A A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .2 8 Î2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10\|xA (Max.) @ V DS = 250V	OCR Scan	PDF	IRF644A IRF644A

Privacy Settings

IRF64 Search Results

IRF64 Price and Stock

Infineon Technologies AG IRF640NSTRLPBF

Vishay Siliconix IRF640STRRPBF

Vishay Siliconix IRF644PBF

Vishay Siliconix IRF640STRLPBF

Vishay Siliconix IRF644STRRPBF

IRF64 Datasheets (260)

IRF64 Datasheets Context Search

Untitled

IRF640 applications note

IRF646

Untitled

IRF640

Untitled

Untitled

Untitled

MOSFET 640N

Untitled

TB334

UC60

irf640

irf640

IRF640PBF

IRF640B

IRF644B

IRF640

IRF640

IRF644N

Untitled

irf6401

Untitled

IRF644A