IRF723 Search Results

IRF722

Abstract: IRF720 IRF7221
Contextual Info: iH A R R is IRF720, IRF721, IRF722, IRF723 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8 A and 3.3A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: No. IRF620 IRF621 IRF623 MTP7N18 IRF720 IRF723 MTP3N35 MTP3N40 IRF820 IRF622 IRF823 MTP2N45 MTP2N50 Cm 600 300 80 B3 2.5 15 600 300 80 B3 1.2 2.5 15 600 300 80 B3 0.25 1.2 2.5 15 600 300 80 B3 4.5 1 0.7 3.5 15 600 300 80 B3 2 4.5 1 0.7 3.5 15 600 300 80 2

IRF722

Abstract: IRF72 IBF721 IBF722 IRF720 IRF721 IRF723 AN975 vtom IBF720
Contextual Info: h e o I MâssMss aaaâssâ i | Data Sheet No. PD-9.315I T-39-11 INTERNATIONAL RE CTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS : ] IRF72Q IRF721 IRF7SS IRF723 N-CHANNEL 400 Volt, 1.8 Ohm HEXFET T0-220AB Plastic Package

IRF7233

Contextual Info: PD- 91849D IRF7233 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS on = 0.020Ω T op V ie w Description These P-Channel MOSFETs from International Rectifier

IRF722P

Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313

Contextual Info: PD- 91849D IRF7233 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS on = 0.020Ω T op V ie w Description These P-Channel MOSFETs from International Rectifier

Contextual Info: IRF720, IRF721, IRF722, IRF723 h a r r is SEMIC0NDUCT0R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate

TP8N10

Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI

IRF720

Abstract: 1RF721 IRF723 t11g IRF721 IRF722
Contextual Info: 01 3875081 G E SOLID STATE D E ^ 3fl7SGûl ' 0 1E 18364 D D i a3bM 3 ~ T D\ T-39-11 Standard Power M O SFET s IRF720, IRF721, IRF722, IRF723 File Number 1579 Power MOS Field-Effect Transistors

PD918

Contextual Info: PD-91849C IRF7233 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D 1 8 S 2 7 D S 3 6 D 4 5 D S G VDSS = -12V RDS on = 0.020W T o p V ie w Description These P-Channel MOSFETs from International Rectifier

Contextual Info: IRF723 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)2.8# I(DM) Max. (A) Pulsed I(D)1.8 @Temp (øC)100 IDM Max (@25øC Amb)11# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50# Minimum Operating Temp (øC)-55õ

EIA-541

Abstract: IRF7101
Contextual Info: PD - 95939 IRF7233PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS on = 0.020Ω Top View Description These P-Channel MOSFETs from International Rectifier

IRF720

Abstract: IRF722 BRF721 IRF721 IRF723
Contextual Info: -Standard Power MOSFETs IRF720, IRF721, IRF722, IRF723 File Number 1579 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.5A and 3.0A, 350V-400V rDs on = 1.8 0 and 2.5 O F e a tu re s:

IRF720R

Abstract: IRF722R IRF723R IRF721R
Contextual Info: Rugged Power MOSFETs File N u m b er IRF720R, IRF721R IRF722R, IRF723R 1991 Avalanche Energy Rated N-Channel Power MOSFETs 2.5A and 3.0A, 350V-400V rDs on = 1.80 and 2.5fi Features: • Single pulse avalanche energy rated

IRF720

Abstract: IRF722
Contextual Info: IRF720, IRF721, IRF722, IRF723 S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8A and 3.3A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: PD- 95018 IRF7233PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS on = 0.020Ω Top View Description These P-Channel MOSFETs from International Rectifier

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

IRF722

Abstract: IRF723
Contextual Info: [P3MÌfiì°[ ffiQ)§> FUT IRF722,723 2.5 AMPERES 400, 350 VOLTS Rd S ON) = 2.5 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

1RF321

Abstract: IRF322 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350

IRF740 smd

Abstract: tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1
Contextual Info: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36

1RF820

Abstract: VN64GA VN2410M IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840
Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\W i iv i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220

VN64GA

Abstract: IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90

pn junction DIODE 1N4001

Abstract: VN64GA IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH IVN6200CNM VN0401D
Contextual Info: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | I I I | ' r r r 's ' < O Ò ' ' ' lO ' I O O I I I P ' ' ' ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i I I j j CO 00 CO CO j I I I I OOOO

1RF820

Abstract: 733 331 VN64GA CHARACTERISTICS DIODE 10SI 10 IRF332 VN4000A IRF340 IRF440 IRF450 IRF820
Contextual Info: Ü Ü A C D ^ U /C D M i v i a iv i v ^ i v T T k iv r i i i i i v D r/\W i t i v u v i w C A lA A ^ /\ r i f^ .n \ M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING Packages: I B V qss Volts 4 5 0 -5 0 0 TO-3 TO-220