IRFIB5N65A
Abstract: No abstract text available
Text: PD-91816B IRFIB5N65A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results in Simple Drive Requirement
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PD-91816B
IRFIB5N65A
O-220
Gate-t252-7105
IRFIB5N65A
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1N6844U3
Abstract: JANS1N6844U3 15LJQ100 JANTX1N6844U3 JANTXV1N6844U3 1n6844
Text: PD-91855B 15LJQ100 JANS1N6844U3 JANTX1N6844U3 JANTXV1N6844U3 15A, 100V SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES REF: MIL-PRF-19500/679 Major Ratings and Characteristics Description/Features Characteristics Limits IF AV Rectangular Waveform 15 A VRRM 100
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PD-91855B
15LJQ100
JANS1N6844U3
JANTX1N6844U3
JANTXV1N6844U3
MIL-PRF-19500/679
15Apk,
The1N6844U3
1N6844U3
JANS1N6844U3
15LJQ100
JANTX1N6844U3
JANTXV1N6844U3
1n6844
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Gate Driver of IRF1404
Abstract: IRF1404 PD-91896F
Text: PD-91896F IRF1404 l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Automotive Qualified Q101 HEXFET Power MOSFET D VDSS = 40V RDS(on) = 0.004Ω G ID = 202A
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PD-91896F
IRF1404
IRF1010
O-220AB
Gate Driver of IRF1404
IRF1404
PD-91896F
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Untitled
Abstract: No abstract text available
Text: PD-91860J IRHNA57160 JANSR2N7469U2 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/673 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNA57160 100K Rads (Si) RDS(on) 0.012Ω ID QPL Part Number 75A* JANSR2N7469U2
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PD-91860J
IRHNA57160
JANSR2N7469U2
MIL-PRF-19500/673
IRHNA57160
IRHNA53160
JANSF2N7469U2
IRHNA54160
JANSG2N7469U2
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DIODE SMD 55
Abstract: No abstract text available
Text: PD-91852I IRHNA57064 JANSR2N7468U2 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/673 5 Product Summary Part Number Radiation Level IRHNA57064 100K Rads (Si) IRHNA53064 300K Rads (Si) RDS(on) ID QPL Part Number 0.0056Ω 75A* JANSR2N7468U2
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PD-91852I
IRHNA57064
IRHNA53064
IRHNA54064
IRHNA58064
1000K
JANSR2N7468U2
MIL-PRF-19500/673
DIODE SMD 55
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JANS1N6844U3
Abstract: 1N6844U3 1N6844U JANTXV1N6844U3
Text: PD-91855C 15LJQ100 JANS1N6844U3 JANTX1N6844U3 JANTXV1N6844U3 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 15Amp, 100V REF: MIL-PRF-19500/679 Major Ratings and Characteristics Description/Features Characteristics Limits IF AV Rectangular Waveform 15 A VRRM 100
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PD-91855C
15LJQ100
JANS1N6844U3
JANTX1N6844U3
JANTXV1N6844U3
15Amp,
MIL-PRF-19500/679
15Apk,
The1N6844U3
1E-005
1N6844U3
1N6844U
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Untitled
Abstract: No abstract text available
Text: PD-91886C IRFBA22N50A SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
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PD-91886C
IRFBA22N50A
AN1001)
Super-220Â
O-273AA)
08-Mar-07
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400V to 12V DC Regulator
Abstract: No abstract text available
Text: PD-91863E RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF7430SE JANSR2N7464T2 500V, N-CHANNEL REF: MIL-PRF-19500/675 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHF7430SE Radiation Level RDS(on) 100K Rads (Si) 1.77Ω ID QPL Part Number
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PD-91863E
IRHF7430SE
JANSR2N7464T2
MIL-PRF-19500/675
JANSR2N7464T2
MIL-STD-750,
MlL-STD-750,
O-205AF
400V to 12V DC Regulator
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Untitled
Abstract: No abstract text available
Text: PD-91839K RADIATION HARDENED POWER MOSFET THRU-HOLE SMD-2 IRHNA57260SE JANSR2N7473U2 200V, N CHANNEL REF:MIL-PRF-19500/684 5ÃÃ$ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA57260SE 100K Rads (Si) 0.038Ω 53.5A JANSR2N7473U2
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PD-91839K
IRHNA57260SE
JANSR2N7473U2
MIL-PRF-19500/684
IRHNA57260SE
MIL-STD-750,
MlL-STD-750,
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AN1001
Abstract: IRFBA22N50A 90137
Text: PD-91886C IRFBA22N50A SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
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PD-91886C
IRFBA22N50A
AN1001)
Super-220
O-273AA)
12-Mar-07
AN1001
IRFBA22N50A
90137
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IRFIB5N65A
Abstract: 12A 650V MOSFET 13A 650V MOSFET Equivalent IRF 740 irf 739 mosfet transistor IRF 630 IRFI840G
Text: PD-91816 IRFIB5N65A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results in Simple Drive Requirement
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PD-91816
IRFIB5N65A
O-220
IRFIB5N65A
12A 650V MOSFET
13A 650V MOSFET
Equivalent IRF 740
irf 739 mosfet
transistor IRF 630
IRFI840G
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IRF7663
Abstract: No abstract text available
Text: PD-91866B IRF7663 HEXFET Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -20V RDS(on) = 0.020Ω
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PD-91866B
IRF7663
IRF7663
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JANSR2N7463T2
Abstract: IRHF7330SE
Text: PD-91864B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-205AF IRHF7330SE JANSR2N7463T2 400V, N-CHANNEL REF: MIL-PRF-19500/675 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHF7330SE Radiation Level 100K Rads (Si) RDS(on) ID QPL Part Number
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PD-91864B
O-205AF)
IRHF7330SE
JANSR2N7463T2
MIL-PRF-19500/675
O-205AF
MIL-STD-750,
MlL-STD-750,
JANSR2N7463T2
IRHF7330SE
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IRF1404
Abstract: Gate Driver of IRF1404 PD-91896F Gate Driver for IRF1404 tr irf1404 irf1404 to220ab ir
Text: PD-91896F IRF1404 l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Automotive Qualified Q101 HEXFET Power MOSFET D VDSS = 40V RDS(on) = 0.004Ω G ID = 202A
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PD-91896F
IRF1404
IRF1010
O-220AB
IRF1404
Gate Driver of IRF1404
PD-91896F
Gate Driver for IRF1404
tr irf1404
irf1404 to220ab ir
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Untitled
Abstract: No abstract text available
Text: PD-91882A IR2113E6 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels
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PD-91882A
IR2113E6
120ns
IR2113E6
LCC-18)
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Untitled
Abstract: No abstract text available
Text: PD-91863E RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF7430SE JANSR2N7464T2 500V, N-CHANNEL REF: MIL-PRF-19500/675 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHF7430SE Radiation Level RDS(on) 100K Rads (Si) 1.77Ω ID QPL Part Number
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PD-91863E
IRHF7430SE
JANSR2N7464T2
MIL-PRF-19500/675
MIL-STD-750,
MlL-STD-750,
O-205AF
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Untitled
Abstract: No abstract text available
Text: I . I PD-91814A International M R Rectifier SMPSM0SFET IRFSL9N60A HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching • This device is only for through hole application.
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PD-91814A
IRFSL9N60A
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Untitled
Abstract: No abstract text available
Text: PD-91885A International IOR Rectifier SMPS MOSFET IRFBC40A HEXFET Power MOSFET A pplications • • • Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching V dss 600V Rds(on) max Id 1.2£2 6.2A B e n efits • Low Gate Charge Qg results in Simple
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PD-91885A
IRFBC40A
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Untitled
Abstract: No abstract text available
Text: PD-91866A International IOR Rectifier IRF7663 HEXFET Power MOSFET • • • • • • Trench Technology Ultra Low O n-Resistance P-Channel M O SFET Very Small SOIC Package Low Profile <1.1 mm A vailable in Tape & Reel V d s s = -2 0 V R ü S (o n ) =
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PD-91866A
IRF7663
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Untitled
Abstract: No abstract text available
Text: PD-91844A International ie R Rectifier IRF7210 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface Mount Available in Tape & Reel V Ds s = -12V RüS on = 0.007Q. Description These P-Channel MOSFETs from International Rectifier
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PD-91844A
IRF7210
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Untitled
Abstract: No abstract text available
Text: I , I PD-91811 International 3BR Rectifier IR F B 9N 60A HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer
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PD-91811
O-220
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Untitled
Abstract: No abstract text available
Text: PD-91850C International IOR Rectifier IRF7220 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface Mount A vailable in Tape & Reel V dss = -14V R ü S o n = 0.0120 . Description T h e s e P -C h a n n e l M O S F E T s from International Rectifier
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PD-91850C
IRF7220
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Untitled
Abstract: No abstract text available
Text: PD-91843 International IO R Rectifier IR L B L 1 3 0 4 HEXFET Power MOSFET • • • • • • • >1mm lower profile than D2Pak Same footprint as D2pak Logic Level Gate Surface mount Ultra Low On-Resistance Fully Avalanche Rated 50% greater current in typ. application
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PD-91843
55M5S
DQ3335D
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Untitled
Abstract: No abstract text available
Text: , . I PD-91809B I n t e r n a t io n a l MR Rectifier IRFB11N50A s m p s m o s fe t HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching V dss 500V Rds(on) max 0.52Î2 Id 11A
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PD-91809B
IRFB11N50A
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