2N596 Search Results

2N5744

Abstract: TO61 2N5678 2N5741 2N5742 2N5743 2N5958 2N5960 SDT3101 SDT3102
Contextual Info: Device Type 2N5678 2N5741 2N5742 2N5743 2N5744 2N5958 2N5960 SDT3101 SDT3102 SDT3103 SDT3104 SDT3850 SDT3851 SDT3852 SDT3875 SDT3876 SDT3877 VCEO V 100 60 100 60 100 100 100 40 60 80 100 40 80 40 40 80 40 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 25/75

2N5967

Abstract: SDT6436 SDT6437 SDT6438 DSASW0036862
Contextual Info: Device Type 2N5967 SDT6436 SDT6437 SDT6438 VCEO hFE V Min/Max @ IC (A) 100 80 100 120 30/100 40/120 40/120 40/120 15.0 20.0 20.0 20.0 VCE @ IC (A) (sat) Max (V) 1.20 15.0 1.00 20.0 1.00 20.0 1.00 20.0 fT MIN (MHz) PT MAX (W) 10.0 20.0 20.0 20.0 125.0 200.0

2n60n

Abstract: 2N6235 2N6078 2N5968 2N5970 2N6032 2N6033 2N6046 2N6215 2N6060
Contextual Info: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN SAT . VO LTA GES M ax. h F: E V OLTAGE S NPN 'c 'c CASE VCB V CE V EB V CE (V) (A) M in. Max. (A) !b (A) V CE (V) V BE (V) 2N5968 TO-63/I 100 100 10 10 10 30 120 10 1.5 1.2 2 2N5970 TO-3 80 80

Contextual Info: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE

Contextual Info: SEMICONDUCTOR • 2N5961 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum RatinQS

2N5962

Abstract: 2N5963 2N59 2N5961
Contextual Info: 2N5961 2N5962 2N5963 Central semiconductor Corp. ♦I NPN SILICON TRANSISTOR JEDEC TO-92 CASE EBC 1 4 5 Adam s Avenue Hauppauge, New Y ork 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5961 Series types are Epoxy Molded Silicon NPN Transistors manu­

23741

Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
Contextual Info: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 JAN2N6437 JANTX2N6437 JANTXV2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967

2N5961

Abstract: 2N5088
Contextual Info: 2N5961 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol

Contextual Info: S E M IC O N D U C T O R • 2N5962 MMBT5962 Mark: 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose am plifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

Contextual Info: SEMICONDUCTOR ¡m 2N5961 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. AbSOlUtG Maximum RâtinÇjS

2N5330

Abstract: 2N5672 2N4002 2N4003 2N5331 2N5584 2N5671 2N5733 2N5734 2N5966
Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N4002 2N4003 2N5330 2N5331 2N5584 2N5671 2N5672 2N5733 2N5734 2N5966 SDT6338 SDT6339 SDT6340 SDT6341 SDT8151 SDT8152 SDT8153 SDT8154 SDT8155 SDT8156 SDT8157 SDT8158 SDT8159 SDT8301 SDT8302 SDT8303 SDT8304 SDT44301

p20n60

Abstract: CK420 2SC733bl 2N1077 2SC482 2SC337 2S01781K BCY581X LOW-POWER SILICON NPN BSY75
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 BC183CP BCl84CP BC184C BC184LC BC183KB BC183B BC184B 2N4385 2N4386 BC269 2N1948 2SC733BL PTC139 BC183K BC183KC BC183 BC183C BCl84 ZTX384 2N5963 2N5963 2N5963 PMBT5088 2N718A UPI718A 2SC482

MA550

Abstract: 2N5088 2N5962 MMBT5962
Contextual Info: S E M IC O N D U C T O R 2N5962 MMBT5962 M a rk : 1 1 7 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general p u rp o se a m p lifie rs re q u irin g c o lle c to r cu rre n ts to 50 mA. Sourced from Process 07. See 2N 5088 for characteristics.

2N5968

Abstract: 2N5967 Solidev Semiconductors Scans-0012430 Solidev
Contextual Info: Sem iconductors Solidev Silicon Power Transistors M A X IM U M O P E R A T IN G A R E A S Silicon N P N /P N P Power Transistors—40 Amp A B S O L U T E M A X IM U M R A T IN G S 2N5967 2N5968 V 100 100 B V CEo (V) 100 100 BV c b o B V ebo (V) 8 10 lc M a x (A )

Contextual Info: 2N5963 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)2.0n @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m

2n5962

Abstract: 2n596
Contextual Info: SEMICONDUCTOR 2N5962 MMBT5962 SOT-23 Mark: 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general p u rp o se a m p lifie rs re q u irin g c o lle c to r c u rre n ts to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

2N5962

Abstract: MMBT5962 2N5088
Contextual Info: 2N5962 MMBT5962 C E C TO-92 BE B SOT-23 Mark: 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

2N5088

Abstract: 2N5961
Contextual Info: S S E fv llG O fs lO L J C îT Q R 2N5961 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Màximum RStinQS

2SC1844P

Abstract: PA6014b SO80G 2SC2784F 2SC100 LOW-POWER SILICON NPN 2sc1844-f 2sc1844 2SC1844F
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 BFR16 MPS2484 2N5961 2N6224 TP5961 TP6224 2S0763 2S0974 BC141-25 BC141-25 t"AbU;J4-10 2N2462 2N2466 BC431-1S 2SC1008 2SC1008 2SC1008 BC487B BC487B18 BC487B5 ~¥~J~lU 25 30 BSX63-1S BSX63-1S EN870 MMCM2484

2N5961

Abstract: 2N5088 CBVK741B019 F63TNR PN2222N
Contextual Info: 2N5961 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N558B

Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
Contextual Info: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265

2N5251

Abstract: 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114
Contextual Info: NEU ENGLAND SEMICON DUC TOR bSbM'îSB 0 0 0 0 0 5 7 5RE T> 14 3 • Ic max = 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fi = 0 .6 to 3 0 MHz IMPN TO-B3 Case 807 ' tc (MAX) (A) hFE @ IC/VCE (min-max @ A/V) 2N1936 2N1937 2N3265 2N3266 60 80 90 60 20 20 20 20

bc856 to 92

Abstract: bc846 to 92 2N2907A TO-92 2N3859A PN3568 Marking 43B NSDU05 8C556 2N3859A NATIONAL SEMICONDUCTOR T0-237
Contextual Info: ]> • £>501130 0 0 3 T 5 1 b General Purpose Amplifiers and Switches continued; Devices (Volts Min PNP NPN 65 (mA) Max Min Max 450 BC546 100 110 BC846 100 110 2N4036 60 hFE@ lc k V CE0(m b 1) fT @»c mA (MHz) Min mA NF (dB) Max (mW) @25°C 2.0 300 Typ