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    2N5958 Search Results

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    2N5958 Price and Stock

    Microchip Technology Inc 2N5958

    POWER BJT
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    Microchip Technology Inc 2N5958 36 Weeks
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    NAC 2N5958 1
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    2N5958 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5958 API Electronics Short form transistor data Short Form PDF
    2N5958 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5958 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5958 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5958 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5958 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5958 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5958 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N5958 Pirgo Electronics Low Frequency Silicon Power Transistor Scan PDF
    2N5958 PPC Products Transistor Short Form Data Scan PDF
    2N5958 Silicon Transistor Industrial Grade Power Transistors Scan PDF
    2N5958 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N5958 Solitron Devices Planar Power Transistor Scan PDF

    2N5958 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5744

    Abstract: TO61 2N5678 2N5741 2N5742 2N5743 2N5958 2N5960 SDT3101 SDT3102
    Text: Device Type 2N5678 2N5741 2N5742 2N5743 2N5744 2N5958 2N5960 SDT3101 SDT3102 SDT3103 SDT3104 SDT3850 SDT3851 SDT3852 SDT3875 SDT3876 SDT3877 VCEO V 100 60 100 60 100 100 100 40 60 80 100 40 80 40 40 80 40 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 25/75


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    PDF 2N5678 2N5741 2N5742 2N5743 2N5744 2N5958 2N5960 SDT3101 SDT3102 SDT3103 2N5744 TO61 2N5678 2N5741 2N5742 2N5743 2N5958 2N5960 SDT3101 SDT3102

    Untitled

    Abstract: No abstract text available
    Text: 2N5958 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)2.5 @I(C) (A) (Test Condition)20


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    PDF 2N5958 Freq20M

    KT827A

    Abstract: SDT7530 SDT80 1748-1820 BLX84 BLX86 sk3561 BLX87
    Text: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A hFE fT ICBO Max Max ton Max on ON) Min (Hz) (A) (a) 97 100 100 100 100 100 100 122 122 125 150 150 175 175 175 175 175 175 175 20 75 30 30 750 10 30 30 20 20 20 20 20 20 30 175


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    PDF SDT3876 SML8003 SML8013 SML8016 SML8071 2N4211 2N3599 SDT44333 KT827V KT827A SDT7530 SDT80 1748-1820 BLX84 BLX86 sk3561 BLX87

    23741

    Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
    Text: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 JAN2N6437 JANTX2N6437 JANTXV2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967


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    PDF PNP-11 23741 PPC 2n5683 JANTX2N6379 JANTX2N6437

    Untitled

    Abstract: No abstract text available
    Text: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840


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    PDF 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744

    2N5314

    Abstract: 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598
    Text: A P I EL ECT RONI CS 00^3592 A P I I NC 2b ELECTRONICS d F | d D 4 3 S cIS □□□Q E3S INC 26C & l~ °~ T :- '3 3 - 0 { 00235 COLLECTOR CURRENT = 20 AMPS NPN TYPES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772 JAN


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    PDF 0CH3592 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N5314

    4233A

    Abstract: 535x 184 324 DIODE 2N5383 2N3055C
    Text: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8


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    PDF 533XCD01 534XCD02 535XCQ01 2N1063 2N107Û 4233A 535x 184 324 DIODE 2N5383 2N3055C

    2N1936

    Abstract: 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598
    Text: A P I ELECTRONICS 00^3592 A P I I NC ' at ELECTRONICS dF § D D 4 3 S cIS INC 26C □□□05BS ñ l~ V ~ T '~ ‘3 3 - 0 i 00235 CO LLECTO R CURRENT = 20 AM PS NPN TY PES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772


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    PDF DD43ScIS D-7I33LOI 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598

    AP1152

    Abstract: 2N4211 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597
    Text: A P I ELECTRONICS 00^3592 A P I I NC ' at ELECTRONICS dF § D D 4 3 S cIS INC 26C □□□05BS ñ l~ V ~ T '~ ‘3 3 - 0 i 00235 CO LLECTO R CURRENT = 20 AM PS NPN TY PES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772


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    PDF DD43ScIS D-7I33LOI 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 AP1152 2N4211

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    9300

    Abstract: 2N5561 2N5330 2N3729 2N4025 2n6561 9301
    Text: SEMICOA IflE D BVce0 Range lc Max. BVeb0 Range • ûlBMbia OGOG1SE M ■ Low Current HFE Mid-Range HFE High Current HFE To V @lc mA Min. @ lc mA Min. 4 6 0.1 30 10 40 300 40 4 6 0.1 20 2 20 140 20 40 3 6 .01 15 2 30 250 20 20 2 4,3 20 60 3 7 .10 20 2 30


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    PDF 2N5004 2N5005 2N5008 2N5009 2N5038 2N5039 2N5077 2N5085 2N5149 2N5150 9300 2N5561 2N5330 2N3729 2N4025 2n6561 9301

    2N5940

    Abstract: 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 2N5733 2N5734 2N5738
    Text: 8254022 S IL IC O N TRANS IS T O R CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued "flö Ô8D 0 0 7 9 6 . DE | f l a S 4 D E S DDDOTTt. 3 ,D . . T - |~~ lc Max Amps VCEO(SUS) Polarity 2N5733 2N5734 2N5737 2N5738 2N5739 NPN NPN PNP PNP


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    PDF 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5940 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030

    2N6960

    Abstract: TO114 SDT96302 SDT96303 2N4002 2N5678 2N421 2N6742 2N6884 SDT8756
    Text: n? SOLITRON DEVICES 95D 0277 3 INC S0LITR0N DEVICES INC TS D T - 3 3 - O Z D f F | fl3bflbDS 0002773 1 |~ [ ^ m © ^ © M ^ y o © P L A N A R P O W E R T R A N S IS T O R S Devices, Inc. @ 1] MOW? Ic A) *T MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 1.50


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    PDF 2N6546 2N6547 SDT14411 SDT14412 SDT14413 SDT14414 SDT14415 2N6246 2N6247 O-114 2N6960 TO114 SDT96302 SDT96303 2N4002 2N5678 2N421 2N6742 2N6884 SDT8756

    N4003

    Abstract: SDT8756 SOT87 TO114 2N5330 SDT3204 SDT5835 SDT5836 SDT5837 SDT5838
    Text: 41 SILICON POWER TRANSISTORS S A T U R A T IO N V O L T A G E S @ C U R R E N T G A IN @ TYPE NUM BER C A SE TYPE V CBO V VCEO V EBO v I v hF E MIN. I M AX. 'c VCE V C E s V BE(s) V 'c 'b A v 5.0 10.0 10.0 10.0 10.0 10.0 1.75 .40 .40 2.50 1.20 1.20 10.0 10.0


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    PDF SDT3204 SDT5835 SDT5836 SDT5837 SDT5838 SDT5865 O-114 SDT5866 SDT5867 N4003 SDT8756 SOT87 TO114 2N5330