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    2N5880 Search Results

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    2N5880 Price and Stock

    Microchip Technology Inc 2N5880

    PNP POWER TRANSISTOR SILICON AMP
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    GTCAP 2N5880

    TRANSISTOR,BJT,PNP,80V V(BR)CEO,15A I(C),TO-3
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    Quest Components 2N5880 9
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    Sabritec 2N5880

    TRANSISTOR,BJT,PNP,80V V(BR)CEO,15A I(C),TO-3
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    Quest Components 2N5880 1
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    2N5880 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5880 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=15 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=160 Original PDF
    2N5880 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5880 API Electronics Short form transistor data Short Form PDF
    2N5880 Boca Semiconductor COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=15 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=160 Scan PDF
    2N5880 Central Semiconductor Complementary Silicon Power Transistors, TO-3 Scan PDF
    2N5880 Diode Transistor Transistor Short Form Data Scan PDF
    2N5880 Diode Transistor Transistor Short Form Data Scan PDF
    2N5880 Diode Transistor Silicon Transistors / TO-63 Transistors Scan PDF
    2N5880 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5880 General Transistor Power Transistor Selection Guide Scan PDF
    2N5880 Mospec POWER TRANSISTORS(15A,160W) - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=15 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=160 Scan PDF
    2N5880 Mospec Complementary Silicon High-Power Transistor Scan PDF
    2N5880 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5880 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5880 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5880 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5880 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5880 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5880 Unknown Transistor Replacements Scan PDF
    2N5880 Unknown Cross Reference Datasheet Scan PDF

    2N5880 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5881

    Abstract: 2N5882 2N5879 2N5880
    Text: Inchange Semiconductor Product Specification 2N5881 2N5882 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5879 2N5880 APPLICATIONS ・For general-purpose power amplifier and switching applications


    Original     		PDF 2N5881 2N5882 2N5879 2N5880 2N5881 2N5882 2N5880

    Untitled

    Abstract: No abstract text available
    Text: 2N5880 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5880 O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5880 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)15 Absolute Max. Power Diss. (W)160# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)15


    Original     		PDF 2N5880 time700n

    2N5880

    Abstract: No abstract text available
    Text: 2N5880 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5880 O204AA) 31-Jul-02 2N5880

    2N5882

    Abstract: 2N5881 2N5879 2N5880
    Text: SavantIC Semiconductor Product Specification 2N5881 2N5882 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5879 2N5880 APPLICATIONS ·For general-purpose power amplifier and switching applications


    Original     		PDF 2N5881 2N5882 2N5879 2N5880 2N5881 2N5882 2N5880

    2N5879

    Abstract: 2N5880 2n5879 pin out 2N5880 motorola NPN bipolar junction transistors max hfe 2000 2N5882 2n5882 motorola 2n5879 power amplifier circuit 2N5879 MOTOROLA 1N5825
    Text: MOTOROLA Order this document by 2N5879/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage —


    Original     		PDF 2N5879/D 2N5879 2N5880* 2N5881 2N5882* 2N5879, 2N5880, 2N5882 2N5879/D* 2N5879 2N5880 2n5879 pin out 2N5880 motorola NPN bipolar junction transistors max hfe 2000 2N5882 2n5882 motorola 2n5879 power amplifier circuit 2N5879 MOTOROLA 1N5825

    NPN power transistor 15A amperes

    Abstract: 2N5880 2N5882 AMP UK 45 COMPLEMENTARY SILICON POWER TRANSISTORS
    Text: 2N5880 & 2N5882 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 1.0V (Maximum) at IC = 7.0A • Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A


    Original     		PDF 2N5880 2N5882 2N5880 NPN power transistor 15A amperes 2N5882 AMP UK 45 COMPLEMENTARY SILICON POWER TRANSISTORS

    2N5879

    Abstract: 2N5880 2N5881 2N5882
    Text: SavantIC Semiconductor Product Specification 2N5879 2N5880 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5881 2N5882 APPLICATIONS ·For general-purpose power amplifier and switching applications


    Original     		PDF 2N5879 2N5880 2N5881 2N5882 2N5879 2N5880 2N5882

    2N5879

    Abstract: 2N5880 2N5882 2N5881
    Text: Inchange Semiconductor Product Specification 2N5879 2N5880 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5881 2N5882 APPLICATIONS ・For general-purpose power amplifier and switching applications


    Original     		PDF 2N5879 2N5880 2N5881 2N5882 2N5879 2N5880 2N5882

    2N5881

    Abstract: 2N5882 2N5879 2N5880
    Text: Product Specification www.jmnic.com 2N5881 2N5882 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector-emitter saturation voltage ・Complement to type 2N5879 2N5880 APPLICATIONS ・For general-purpose power amplifier and switching applications


    Original     		PDF 2N5881 2N5882 2N5879 2N5880 2N5881 2N5882 2N5880

    MJE34 equivalent

    Abstract: BU108 2SA1046 2n5882 BDX54 2N5880 BC 107 npn transistor pin configuration 2SB56 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 60 Vdc (Min) — 2N5879, 2N5881


    Original     		PDF 2N5879, 2N5881 2N5880, 2N5882 2N5879 2N5880* 2N5882* TIP73B TIP74 MJE34 equivalent BU108 2SA1046 2n5882 BDX54 2N5880 BC 107 npn transistor pin configuration 2SB56 BU326 BU100

    2N5880

    Abstract: No abstract text available
    Text: 2N5880 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5880 O204AA) 18-Jun-02 2N5880

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE PNP TO-3 DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247


    OCR Scan     		PDF 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A

    23741

    Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
    Text: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 JAN2N6437 JANTX2N6437 JANTXV2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967


    OCR Scan     		PDF PNP-11 23741 PPC 2n5683 JANTX2N6379 JANTX2N6437

    2N5879

    Abstract: 2N5880 2N5882 2N5881 complimentary 400 w
    Text: Datasheet Central 2N5879 2N5881 Sem iconductor Corp. 2N5880 2N5882 PNP NPN COMPLIMENTARY SILICON POWER TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF 2N5879 2N5880 2N5881 2N5882 2N5879, 200mA 100kHz 2N5879 complimentary 400 w

    2N5880

    Abstract: 2N5882 2N5879 2N5881 S200 TRANSISTOR TC 100
    Text: 2N5879, 2N5880 PNP I 2N5881, 2N5882 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 200 mA, lB = 0 ) 2N5879, 2N5881 2N5880, 2N5882


    OCR Scan     		PDF 2N5879, 2N5880 2N5881, 2N5882 2N5881 2N5880, 2N5882 2N5881 2N5879 S200 TRANSISTOR TC 100

    l5 transistor PNP

    Abstract: 2N3792A 2N6330 PNP TRANSISTOR 2N3789 2N3790 2N4398 2N4901 2N4902 2N4903
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS PNP TO-3 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247


    OCR Scan     		PDF 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A l5 transistor PNP 2N6330 PNP TRANSISTOR

    2N5879

    Abstract: No abstract text available
    Text: TYPES 2N5879, 2N5880 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS a -I c-< f- "0 i—m m </> H ro zg C O •u FO R P O W ER -A M P L IFIE R A N D H IG H -SPEED -SW ITCH IN G A P P LIC A T IO N S D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH 2N 5881, 2N5882


    OCR Scan     		PDF 2N5879, 2N5880 2N5882 2N5879

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N5866

    Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
    Text: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75


    OCR Scan     		PDF 5-500V 2n1487 2n1488 2n1489 2n1490 5n5883 2n5886 2n5884 2n5929 2n5930" 2N5866 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447

    NES 2N5672

    Abstract: 2N4904 5330-30 D0D00S4 2N5867 2N3713 2N3714 2N3715 2N3716 2N3789
    Text: NE 111 E N G L A N D SEMICONDUCTOR STE » • LSbHTTa D0D0054 434 « N E S '7 > 3 5 - o / = 3 -5 0 A VcEO SUS = 4 0 -1 0 0 V fx = 2-6 M Hz lc(MAX) PIMP TO-3 Case 8 0 3 Case 8 0 4 Type No. NPN Complé­ ment VCEO <V) 1C (MAX) (A) (SUS> VCE (SAT) tlFE IC/VCE


    OCR Scan     		PDF 0-100V D0D00S4 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 2N3716 NES 2N5672 2N4904 5330-30 2N5867

    Untitled

    Abstract: No abstract text available
    Text: 0043592 A P I ELECTRONICS INC A P I 26C 00234 ELECTRONICS INC 2b D » F | d D4 3 S c12 D 00 0 2 3 4 b COLLECTOR CURRENT = 15 AMPS NPN TYPES - CONTINUED Device No C ase 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 TO-3 T O -3 TO-3 TO-3 TO-3 TO-3


    OCR Scan     		PDF 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 O61/1

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


    OCR Scan     		PDF 5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487