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    TRANSISTOR H PN 2222A Search Results

    TRANSISTOR H PN 2222A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR H PN 2222A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 2222a to-92

    Abstract: 2222A fairchild transistor pn 2222a transistor C 6092 transistor 2222a NPN2222A PN2222A NPN SMALL SIGNAL PSPICE
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol


    Original     		PDF PN2222A MMBT2222A PZT2222A PN2222A MMBT2222A OT-23 OT-223 PN2222ARA PN2222ABU transistor 2222a to-92 2222A fairchild transistor pn 2222a transistor C 6092 transistor 2222a NPN2222A NPN SMALL SIGNAL PSPICE

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846

    JAN2N2222A

    Abstract: Q002 complementary npn-pnp 2N2222A 026 2N2907A surface mount Power Transisitor 100V 2A Transistor 2N2222A 2N2222A 2N2907A HCT700
    Text: OPTEK Product Bulletin HCT700 May 1993 Surface Mount NPN/PNP Complementary Transistors Type HCT700 Features • C e ra m ic surface mount package • Miniature package to minimize circuit board area • Electrical performance sim ilar to 2 N 2222A and 2N 2 9 0 7 A


    OCR Scan     		PDF HCT700 HCT700 2N2222A 2N2907A MIL-S-19500 JANTX2N4854U) Q00233S JAN2N2222A Q002 complementary npn-pnp 2N2222A 026 2N2907A surface mount Power Transisitor 100V 2A Transistor 2N2222A 2N2907A

    BT2222A

    Abstract: BT2222 2N2222 BT3501 BT51 2N2708 2N2944 2N2483 2N24B4 2N929
    Text: Discrete Devices Beam Lead Chips Transistor Chips 1 0 0 % Probed Parameters @ 2 5 ° C Partial List Function Polarity Similar Typ e BVCBO Volts E IA ly p e M in @ 10 n A BVCEO Volts M in @ 10 m A BVe b O V olts M in @ 1 0 u A Hf e @ Ic mA M in/M ax Mech.


    OCR Scan     		PDF BT929 2N929 BT930 2N930 BT2483 2N2483 BT2484 2N24B4 BT2604 2N2604 BT2222A BT2222 2N2222 BT3501 BT51 2N2708 2N2944

    LB121A

    Abstract: TIF42C JAPAN transistor TIF41C TIF32C HE9013H transistor EBC 3904 3842P SC2625 BD238 EV
    Text: s * hu tt s o m n iB J U f tic « » * a * B D » o r b d s t » In addition to our own products, we supply the following products in JAPAN. TRANSISTOR, LINEAR 1C ' J M S S M A L L NPN N U M B ER PN P or IVD— SIGNAL TRANSISTORS MAXIMUM R ATIN G S HSM C


    OCR Scan     		PDF BT1815 HMBT1Q15 BT2222A BT2907A HBC807 BC817 BT5087 BT5088 BT8050 BT8550 LB121A TIF42C JAPAN transistor TIF41C TIF32C HE9013H transistor EBC 3904 3842P SC2625 BD238 EV

    transistor pn 2222a

    Abstract: transistor 2222a to-92 marking EB 202 transistor
    Text: PN2907A PNP SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Die Construction KM hM Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and General Purpose Amplifier Applications Complementary NPN Type Available PN 2222A TO-92


    OCR Scan     		PDF PN2907A IL-STD-202, -15mA -50mA -50mA -150mA -500mA -50mA, 100MHz transistor pn 2222a transistor 2222a to-92 marking EB 202 transistor

    2N1026

    Abstract: 2N1025 2N328A 2N760A 2N2708 2N327A 2N327B 2N328B 2N329A 2N329B
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


    OCR Scan     		PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 2N1026 2N1025 2N2708

    2N3134

    Abstract: 2N3135 2N3136 2N3250 2N3250A 2N3251A 2N3299 2N3300 2N3302 BT2907A
    Text: Transistors Cont. Discrete Devices Medium Current, High-Speed Amplifiers (Cont.) Maxim um Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C V c b VCE V e b Volts Volts Volts V C E (Sat) lc /l„ H f e @ >C Min/Max mA Volts m A/m A


    OCR Scan     		PDF 2N3134 2N3135 2N3136 2N3250 2N3250A 2M3251 2N3251A BT2946 2N2946 BT3999 2N3299 2N3300 2N3302 BT2907A

    equivalent transistor 2N1711

    Abstract: 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package 2N328A transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


    OCR Scan     		PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 equivalent transistor 2N1711 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR

    2N3053 NPN transistor

    Abstract: BT2222A 2N22 BT2222 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020
    Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE


    OCR Scan     		PDF 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 BT2946 2N2946 2N3053 NPN transistor BT2222A 2N22 BT2222

    2N2222A JANTX

    Abstract: 2N2222A JANTXV Transistor 2N2222A 2N2222A 2N6989U JANTX2N6989U jantxv2n6989u
    Text: @ .Q P IE K Product Bulletin JAN TX, JAN TXV , 2N6989U January 1996 Surface Mount Quad NPN Transistor Type JA N TX , JA N TX V, 2N6989U Features Absolute Maximum Ratings T a = 2 5 ° C u n le s s o th e rw is e noted • Ceram ic surface mount package • Herm etically sealed


    OCR Scan     		PDF 2N6989U 2N6989U 2N2222A MIL-PRF-19500/559 JANTX2N6989U 00032G3 2N2222A JANTX 2N2222A JANTXV Transistor 2N2222A 2N2222A jantxv2n6989u

    EQUIVALENT TRANSISTOR bc109c

    Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


    OCR Scan     		PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 EQUIVALENT TRANSISTOR bc109c TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor

    st2222a

    Abstract: RXT2222A st 2222A transistor 2222a transistor 2222a to-92 r1p 11 TRANSISTOR sst2222a pn 2222a
    Text: Transistors I NPN Medium Power Transistor Switching UMT2222A/SST2222A/MMST2222A/RXT2222A/PN2222A •Features •External dimensions (Units : mm) 1 } B V ceo< 4 0 V ( ¡c ~ 1 0 rn A ) 2 ) Com plem ents the U M T 2907A /S ST2907A /M M ST2907A /RXT2907A/PN 2907A.


    OCR Scan     		PDF 2222A/SST2222A/MMST2222A/RXT2222A/PN2222A ST2907A /RXT2907A/PN UMT2222A SST2222A MMST2222A RXT2222A PN2222A T2222A st2222a st 2222A transistor 2222a transistor 2222a to-92 r1p 11 TRANSISTOR pn 2222a

    2N3303

    Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
    Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any


    OCR Scan     		PDF Chiana56 2N3303 T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


    OCR Scan     		PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    PN2222A

    Abstract: PN2907A
    Text: PN2907A VISHAY PNP SMALL SIGNAL TRANSISTOR y LITEM ZI POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and General Purpose Amplifier Applications Complementary NPN Type Available


    OCR Scan     		PDF PN2907A PN2222A) MIL-STD-202, PN2907A -50mA, 100MHz -150mA, -15mA PN2222A

    2n2222 kec

    Abstract: 2222a KTN2222 KTN2222A transistor h pn 2222a
    Text: SEMICONDUCTOR TECHNICAL DATA KTN2222/A EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx-10nA Max. ; V ce-60V, V eb(off)-3V. • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150mA, lB=15mA.


    OCR Scan     		PDF KTN2222/A 150mA, KTN2907/2907A. KTN2222/2222A 2N2222/2222A. KTN2222 KTN2222A 2n2222 kec 2222a KTN2222A transistor h pn 2222a

    BFS43

    Abstract: BFS42 BFS44 1N 2907A 2N2475 transistor equivalents for 2n2222a BFS36 BFS36A BFS37A BFS38
    Text: Micro-E Semiconductors for Hybrid Integrated Circuits Transistors and Diodes designed specifically for use w ith T hick and Thin Film Circuits. Features % High Thermal Dissipation 0 Transfer Moulded Construction 0 Tin Plated Leads # Surface Bonding 0 Double Ended Construction


    OCR Scan     		PDF BFS44/45) 500mA BFS42, BFS43, BFS44 BFS45 350mW Time-10 BFS36 2N930 BFS43 BFS42 1N 2907A 2N2475 transistor equivalents for 2n2222a BFS36A BFS37A BFS38

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan     		PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    CTC 880 transistor

    Abstract: CTC 313 transistor 3 pin CTC 880 transistor GSM0102 CTC 313 transistor pin diagram T1L112 ctc 313 npn transistor
    Text: T O ñ H EW LETT’ m LEM PA CK A R D 4.8 V NPN Silicon Bipolar Common Em itter Transistor Technical Data AT-38086 Features • 4.8 Volt Pulsed pulse width = 577 usee, duty cycle = 12.5% /CW Operation 85 mil Plastic Surface Mount Package Outline 86 • +28 dBm Pulsed Pout


    OCR Scan     		PDF AT-38086 AT-38086 CTC 880 transistor CTC 313 transistor 3 pin CTC 880 transistor GSM0102 CTC 313 transistor pin diagram T1L112 ctc 313 npn transistor

    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


    OCR Scan     		PDF 76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram

    smd npn 2n2222

    Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
    Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.


    OCR Scan     		PDF 2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor