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    BFS43 Price and Stock

    Conec Corporation SAL-12B-FS4.3-0,5

    Connector: M12; socket; PIN: 4; male; B code-Profibus; soldering
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SAL-12B-FS4.3-0,5 76 1
    • 1 $8.84
    • 10 $7.95
    • 100 $6.19
    • 1000 $6.19
    • 10000 $6.19
    		Buy Now

    BFS43 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFS43 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    BFS43 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    BFS43 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFS43 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BFS43 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFS43 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFS43 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF

    BFS43 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFS43 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)710m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF BFS43 Freq60M

    2N2369 SOT-23

    Abstract: BAW66 diode marking w8 BZX88-C7V5 BAW* diode W6 marking sot-23 baw 92 Z6 DIODE BZX88C8V2 BAW63A
    Text: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast


    OCR Scan     		PDF BAW63 BZX88-C10 BZX88-C11 BZX88-C12 BZX88-C13 BZX88-C15 BZX88-C16 BZX88-C18 BZX88-C20 BZX88-C22 2N2369 SOT-23 BAW66 diode marking w8 BZX88-C7V5 BAW* diode W6 marking sot-23 baw 92 Z6 DIODE BZX88C8V2 BAW63A

    bcy79 equivalent

    Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A bcy79 equivalent 2N3053 equivalent bcy78 equivalent 2N2905a equivalent f025

    2N4427 equivalent

    Abstract: ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A 2N4427 equivalent ZT Ferranti 2N2369 equivalent 2N2708 BZX88-C4V3 diode BAW67 f025 ic marking z7 J 2N2369 marking G5

    BC239C equivalent

    Abstract: BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC239C equivalent BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent

    BFS98

    Abstract: BSV33 2N2475 2N4127 BFS96 BFS97 ZT180 ZT181 ZT182 ZT183
    Text: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 2 5°C amb. mW VCE(sat) ^FE Ic BO at max. volts h min. at >0 mA Outline Draw­ ing •c mA ■ b mA min. max. -1 5 0 -1 5 0


    OCR Scan     		PDF BFS96 BFS97 BFS98 -150t BFS59-61 ZTX510 BSV33 BFS36 2N930 BFS37 2N2475 2N4127 ZT180 ZT181 ZT182 ZT183

    ZT1483

    Abstract: ZT1701 BCW23 2N929 ZT2120 2N2475 BCW21 2N3707 BC107 BC108
    Text: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed


    OCR Scan     		PDF ZTX330, ZTX331, BCW20 BCW22 2N3707 2N929 ZTX107 ZTX108 ZTX1I09 BC107 ZT1483 ZT1701 BCW23 ZT2120 2N2475 BCW21 BC108

    WIMA TFM

    Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
    Text: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN


    OCR Scan     		PDF RG121JU WIMA TFM Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A

    BFS36

    Abstract: BS9365 marking W4 NPN 2N2475 BFS37 f025 MARKING BS 2N929 2N930 BAW63
    Text: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A marking W4 NPN 2N2475 BFS37 f025 MARKING BS

    BSS56

    Abstract: f025 ic marking z7 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BSS56 f025 ic marking z7

    transistor t2a

    Abstract: NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA BSV23
    Text: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics Maximum Ratings Type No. v CBO VCER Vebo Ptot 25°C smb. fT min. Storajje Time ts (i nax.) at lc mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200 200


    OCR Scan     		PDF BSY95A ZTX310, BSV23 ZTX311 BSV24 ZTX312, BSV25 ZTX313, BSV26 ZTX314, transistor t2a NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA

    2N3707 DIODE

    Abstract: 2n4058 BC107 2N2475 2N929 BC107 equivalent Competitive 2N3707 BC108 BCW20
    Text: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed


    OCR Scan     		PDF ZTX330, ZTX331, BCW20 BCW22 2N3707 2N929 ZTX107 ZTX108 ZTX1I09 BC107 2N3707 DIODE 2n4058 2N2475 BC107 equivalent Competitive BC108

    BFY52 equivalent

    Abstract: ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N929 2N2369 equivalent BAW63
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BFY52 equivalent ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N2369 equivalent

    BC107 equivalent transistors

    Abstract: 2N2475 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302 BS9365
    Text: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC107 equivalent transistors 2N2475

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    BZX88C

    Abstract: BZX88 BZX88C20 2N3053 equivalent 2N929 2N930 bcy59 equivalent BAW63A BFS36 BS9302
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BZX88C BZX88 BZX88C20 2N3053 equivalent bcy59 equivalent

    bc109 Transistor Equivalent list

    Abstract: npn transistor w6 2N2484 equivalent transistors transistor equivalent table bc109 transistor BC109 ZTX341 f021 2N930 BAW63 BFS36
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A bc109 Transistor Equivalent list npn transistor w6 2N2484 equivalent transistors transistor equivalent table bc109 transistor BC109 ZTX341 f021

    2N4041

    Abstract: 2N4429 BFS98 2N3632 2N4127 CV7644 J 2N2222A CV7371 CV7373 ZT80
    Text: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series


    OCR Scan     		PDF ZT80-ZT180 100mA Series-ZT180 ZT110-ZT280 CV7373) CV7644) CV7371) CV7372) ZT183. ZT184 2N4041 2N4429 BFS98 2N3632 2N4127 CV7644 J 2N2222A CV7371 CV7373 ZT80

    BC107 equivalent transistors

    Abstract: BC140 equivalent BCY71 BS 2N3053 equivalent marking 1801 2N929 2N930 BAW63 BAW63A BFS36
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. number* Page Type Device


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC107 equivalent transistors BC140 equivalent BCY71 BS 2N3053 equivalent marking 1801

    BC140 equivalent

    Abstract: 2N3053 equivalent 2n4036 equivalent equivalent to BC177 2N929 2N930 BAW63 BAW63A BFS36 BFS36A
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BC140 equivalent 2N3053 equivalent 2n4036 equivalent equivalent to BC177

    MPSA42 equivalent

    Abstract: MPSA43 equivalent MPSA92 equivalent ZTX320 equivalent ZTX542 equivalent ztx342 cd BZX88C BF493 ZTX541 equivalent ZTX327
    Text: TABLE 10 : NPNiPNP HIGH FREQUENCY The devices shown in this table are designed for high frequency operation is such application areas as amplification, switching and oscillation. The transistors marked with f are particularly suitable for use in RF and Video IF stages of television re­


    OCR Scan     		PDF ZTX327 BF196P BS9365 BZX88-C5V1 BFT27 2N2484 BZX88-C5V6 BSS47 ZTX342 MPSA42 equivalent MPSA43 equivalent MPSA92 equivalent ZTX320 equivalent ZTX542 equivalent ztx342 cd BZX88C BF493 ZTX541 equivalent

    BFS43

    Abstract: BFS42 BFS44 1N 2907A 2N2475 transistor equivalents for 2n2222a BFS36 BFS36A BFS37A BFS38
    Text: Micro-E Semiconductors for Hybrid Integrated Circuits Transistors and Diodes designed specifically for use w ith T hick and Thin Film Circuits. Features % High Thermal Dissipation 0 Transfer Moulded Construction 0 Tin Plated Leads # Surface Bonding 0 Double Ended Construction


    OCR Scan     		PDF BFS44/45) 500mA BFS42, BFS43, BFS44 BFS45 350mW Time-10 BFS36 2N930 BFS43 BFS42 1N 2907A 2N2475 transistor equivalents for 2n2222a BFS36A BFS37A BFS38

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    BS9365

    Abstract: BS9302 f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6
    Text: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A f025 BAW68 marking Z9 F008 BZX88-C5V1 2N2475 BFS46A BZX88-C5V6