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    BSY95A Search Results

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    BSY95A Price and Stock

    STMicroelectronics BSY95A

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    Bristol Electronics BSY95A 4 1
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    Quest Components BSY95A 3
    • 1 $15
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    BSY95A Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSY95A Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO18 / Vceo=15 / Ic=0.2 / Hfe=50-200 / fT(Hz)=200M / Pwr(W)=0.3 Original PDF
    BSY95(A) Unknown Silicon NPN Transistor Original PDF
    BSY95A Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=15 / Ic=0.2 / Hfe=50-200 / fT(Hz)=200M / Pwr(W)=0.3 Original PDF
    BSY95A Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BSY95A Continental Device India TO-92 NPN Plastic Package Transistors Scan PDF
    BSY95A Crimson Semiconductor Transistor Selection Guide Scan PDF
    BSY95A Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    BSY95A Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    BSY95A Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    BSY95A ITT Industries Misc. Data Book Scans 1975/76 Scan PDF
    BSY95A ITT Semiconductors Transistors 1980 Scan PDF
    BSY95A ITT Semiconductors Semiconductor Summary 1969 Scan PDF
    BSY95A Micro Electronics Semiconductor Devices Scan PDF
    BSY95A Mullard Quick Reference Guide 1977/78 Scan PDF
    BSY95A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BSY95A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BSY95A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSY95A Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BSY95A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BSY95A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    BSY95A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BSY95A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original     		PDF BSY95A O206AA) 35/10m 16-Jul-02

    BSY95A

    Abstract: No abstract text available
    Text: BSY95A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original     		PDF BSY95A O206AA) 35/10m 2-Aug-02 BSY95A

    Untitled

    Abstract: No abstract text available
    Text: BSY95A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 15V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original     		PDF BSY95A O206AA) 35/10m 19-Jun-02

    switch NPN

    Abstract: BSY18 2N2369 2n4390
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


    Original     		PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390

    BSY95A

    Abstract: No abstract text available
    Text: b ^ E D • bbSB'IBl U Q 2 7 ^5 E a n N AMER PHILIPS/DISCRETE APX BSY95A A SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistors in a TO-18 metal envelope intended for general purpose low level switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter


    OCR Scan     		PDF BSY95A 0027c BSY95A

    BF496

    Abstract: CD639 BF959 BSY95A CC337 CC337-16 CC337-25 CC338-16 CC338-25 CC338-40
    Text: Electrical Characteristics Ta=25°C, Unless Otherwise Specified Maximum Ratings Type No. BF496 BF959 BSY95A CC337 V CB0 V CE0 ^EBO (V) Min (V) Min (V) Min 30 20 3 30 20 50 20 15 45 3 5 5 'cBO (W) (A) @Tc=25°< 0.3 0.02 0.5 0.625 0.1 0.625 0.2 0.625 0.8 ^CB


    OCR Scan     		PDF BF496 BF959 O-92-2 BSY95A CC337 CD639 CC337-16 CC337-25 CC338-16 CC338-25 CC338-40

    Untitled

    Abstract: No abstract text available
    Text: Electrical Characteristics Ta=25°C, Unless Otherwise Specified Maximum Ratings Type No. BF496 BF959 BSY95A CC337 VCBO VCEO ^EBO (W) (A) (V) (V) (V) Min Min Min @Tc=25°< 30 30 20 50 20 20 15 45 3 3 5 5 0.3 'cBO ^CB *CES ^CE e (V) m (V) W Max Max 0.02 0.5


    OCR Scan     		PDF CC337 CC337-25

    BSY95A

    Abstract: npn general purpose ic 2 bo 565 Silicon Epitaxial Planar Transistor philips bbS3T31
    Text: b^E D • LbSB'iai □G27'1SS B'H IAPX N AMER PHILIPS/DISCRETE Jl BSY95A SILICON PLANAR EP ITAXIA LTR A N SISTO R NPN transistors in a T O -1 8 metal envelope intended fo r general purpose low level switching applications. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		PDF G27tiss BSY95A b53T31 bbS3T31 BSY95A npn general purpose ic 2 bo 565 Silicon Epitaxial Planar Transistor philips

    BSY95A

    Abstract: No abstract text available
    Text: BSY95A SbE T> PHILIPS INTERNATIONAL TllOfiEb OOMHHMS 36T W P H I N T-3S-U SILICON PLANAR EPITAXIALTRANSISTOR NPN transistors in a TO-18 metal envelope intended for general purpose low level switching applications. Q U ICK R E F E R E N C E D A TA Collector-base voltage open emitter


    OCR Scan     		PDF BSY95A Q0MH44E 711002b D0MBM45 T-35-11 IB6231| BSY95A

    BSY95A

    Abstract: BSY95
    Text: BSY95A NPN Silicon Epitaxial Planar Transistor for general purpose switching applications max.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings Symbol


    OCR Scan     		PDF BSY95A 100mA 100mA BSY95A BSY95

    Untitled

    Abstract: No abstract text available
    Text: 5LE J> m m057& 000btitiS 332 • ZETB^'2 '*7' 0 { NPN LOW LEVEL ZETEX SEMICONDUCTORS Type V CB V ceo V M ax lc V mA M a x V CE sat at V k mA Min f-jat hFE at !b Min M ax 'c m A MHz mA mA Continued P.ot at =ta Package Comple­ ment mW 2N3053 60 40 700 1.4


    OCR Scan     		PDF 000bt 2N3053 2N696 2N697 BFY51 BSY51 BSY52 BC107 BCY59 BCY56

    TO-39 1000 V

    Abstract: No abstract text available
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		PDF BC108 ZT180 ZT187 2N706A 2N706 BCY57 BSY95A TO-39 1000 V

    2N2222 hfe

    Abstract: 2N2222 chip ztx313 BCY71 2N2218 2N2219 2N2221 2N2222 2N2904 2N2906
    Text: NPN SWITCHING M ax VCE sat| at Max Type V CEO Continued f T Min at h FE at P acksQ S 'c •c •b Min Max •c ton 'c . mA MHz mA ns mA mA 0.35 150 15 40 150 50 150 15 40 0.4 150 15 100 800 0.4 150 15 40 120 30 800 0.4 150 15 100 ZT80 25 500 0 .2 10 2 38 ZT87


    OCR Scan     		PDF BFY51 2N2218 2N2904 2N2219 2N2905 2N2221 2N2906 2N2222 2N2907 ZT180 2N2222 hfe 2N2222 chip ztx313 BCY71 2N2904 2N2906

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    typical 2n2222 npn transistors

    Abstract: 2N2475 2N2221 2N2222 2N2483 FF2221E FF2221J FF2222E FF2222J FF2483E
    Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium


    OCR Scan     		PDF FF3725J FF2221E FF2221J 2N2221 FF2222E FF2222J 2N2222 FF2483E FF2483J MoulTO-18 typical 2n2222 npn transistors 2N2475 2N2222 2N2483

    BSY55

    Abstract: Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


    OCR Scan     		PDF 2N2219A 2N2905A 2N2222A 2N2907A ZT181 BCY58 T0-18 BCY78 BSY51 BSY55 Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5


    OCR Scan     		PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    transistor t2a

    Abstract: 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 BSV24 BSV25
    Text: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics M axim um Ratings Type No. v CBO VCER Vebo P to t 25°C smb. fT min. Storajje Time t s ( i nax.) at l c mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200


    OCR Scan     		PDF BSY95A ZTX310, BSV23 ZTX311 BSV24 ZTX312, BSV25 ZTX313, BSV26 ZTX314, transistor t2a 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369

    2N2220

    Abstract: 2N2219 transistor 2N2475 2N2218 2N2219 2N2221 2N2222 2N2904 2N2905 2N2906
    Text: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at V hFE at Switching Times (Max) at fjM in at Package lc Ib Min. Max. !c !c mA MHz mA mA mA 25* 175* 150 TO-39 2N2904 25* 200* 150 TO-39 2N2905 20 20* 213* 150 TO-18 150 250 20 25* 175* 150 TO-18


    OCR Scan     		PDF BFY51 2N2218 2N2904 2N2219 2N2905 2N2220 2N2221 2N2906 2N2222 2N2907 2N2219 transistor 2N2475 2N2904 2N2905 2N2906

    2N2222

    Abstract: 2N2904 2N2218 2N2219 transistor 2N2475 2N2219 2N2220 2N2221 2N2905 2N2906
    Text: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*


    OCR Scan     		PDF BFY51 2N2218 2N2904 2N2219 2N2905 2N2220 2N2221 2N2906 2N2222 2N2907 2N2904 2N2219 transistor 2N2475 2N2905 2N2906

    2N1711 MOTOROLA

    Abstract: DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 SP2222AF bsx46 equivalent SP2484F
    Text: Transistors Cont. Discrete Devices Space Saving Devices Electrical Characteristics @ 25° C Maxim um Ratings Ambient P q Type Polarity One Both Side Sides mW mW VCE<Sat) @ Ic / lß H f e ic Vcb Volts VCE Volts VEB Volts Min/Max mA Volts m A/m A Frequency


    OCR Scan     		PDF SP918AF SP918BF SP2222AF SP2223AF SP2484F SP2907AF SP2946F BSY51 2N2218 BSY52 2N1711 MOTOROLA DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 bsx46 equivalent

    2N2477

    Abstract: 2N2222 2N2219 transistor 2N2938 2N2221 2N2483 FF2221E FF2221J FF2222E FF2222J
    Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium


    OCR Scan     		PDF FF3725J FF2221E FF2221J 2N2221 FF2222E FF2222J 2N2222 FF2483E FF2483J 2N2907A 2N2477 2N2222 2N2219 transistor 2N2938 2N2483

    bcy79 equivalent

    Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A bcy79 equivalent 2N3053 equivalent bcy78 equivalent 2N2905a equivalent f025

    F B0347

    Abstract: b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6
    Text: Pro Electron Series in o PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET o Type No. BC107 BC107A Can Styl« TO-18 TO-18 VCES* v CBO (VI M in 50 50 v CEO (V) M in 45 45 v EB0 (V) M in 6 6 •c e s * 'CBO a InA) Max 15* 15* V CB IV) 50 50 H rh Ne 1 kH z *


    OCR Scan     		PDF DD3SS11 F B0347 b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6