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    THE FIELD STOP IGBT FS IGBT Search Results

    THE FIELD STOP IGBT FS IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    THE FIELD STOP IGBT FS IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FGH40T120SMD

    Abstract: No abstract text available
    Text: FGH40T120SMD / FGH40T120SMD_F155 1200 V, 40 A FS Trench IGBT Features General Description • FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchild ’s new series of field stop trench IGBTs offer the optimum


    Original     		PDF FGH40T120SMD

    FGH15T120

    Abstract: No abstract text available
    Text: FGH15T120SMD 1200 V, 15 A Field Stop Trench IGBT Features General Description • FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum


    Original     		PDF FGH15T120SMD FGH15T120

    Untitled

    Abstract: No abstract text available
    Text: FGH25T120SMD 1200 V, 25 A Field Stop Trench IGBT Features General Description • FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum


    Original     		PDF FGH25T120SMD

    Untitled

    Abstract: No abstract text available
    Text: FGH40T120SMD 1200 V, 40 A FS Trench IGBT Features General Description • FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchild ’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar


    Original     		PDF FGH40T120SMD

    Untitled

    Abstract: No abstract text available
    Text: FGH25T120SMD_F155 1200 V, 25 A FS Trench IGBT Features General Description • • • • • • Using innovative field stop trench IGBT technology, Fairchild ’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar


    Original     		PDF FGH25T120SMD

    Untitled

    Abstract: No abstract text available
    Text: FGH15T120SMD_F155 1200 V, 15 A FS Trench IGBT Features General Description • • • • • • Using innovative field stop trench IGBT technology, Fairchild ’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar


    Original     		PDF FGH15T120SMD

    Untitled

    Abstract: No abstract text available
    Text: NGTB50N60SWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB50N60SWG NGTB50N60SW/D

    15N120L

    Abstract: 15N12 NGTB15N120LWG
    Text: NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB15N120LWG NGTB15N120L/D 15N120L 15N12

    MJ1000

    Abstract: No abstract text available
    Text: NGTB25N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB25N120LWG NGTB25N120L/D MJ1000

    20N120L

    Abstract: NGTB20N120LWG
    Text: NGTB20N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB20N120LWG NGTB20N120L/D 20N120L

    Untitled

    Abstract: No abstract text available
    Text: NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB25N120IHLWG NGTB25N120IHLW/D

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB40N120FLWG NGTB40N120FLW/D

    30N120IHL

    Abstract: NGTB30N120IHLWG
    Text: NGTB30N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB30N120IHLWG NGTB30N120IHL/D 30N120IHL

    NGTB30N60IHLWG

    Abstract: No abstract text available
    Text: NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB30N60IHLWG NGTB30N60IHLW/D

    Untitled

    Abstract: No abstract text available
    Text: NGTB20N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB20N120IHLWG NGTB20N120IHL/D

    20N120IHL

    Abstract: NGTB20N120IHLWG 20n12 20N120
    Text: NGTB20N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB20N120IHLWG NGTB20N120IHL/D 20N120IHL 20n12 20N120

    25N120L

    Abstract: 25N120 NGTB25N120LWG
    Text: NGTB25N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the IGBT is


    Original     		PDF NGTB25N120LWG NGTB25N120L/D 25N120L 25N120

    25N120IHL

    Abstract: NGTB25N120IHLWG NGTB25N120IHL 067147
    Text: NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB25N120IHLWG NGTB25N120IHLW/D 25N120IHL NGTB25N120IHL 067147

    30N60S

    Abstract: No abstract text available
    Text: NGTB30N60SWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB30N60SWG NGTB30N60SW/D 30N60S

    Untitled

    Abstract: No abstract text available
    Text: NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB15N120LWG NGTB15N120L/D

    Untitled

    Abstract: No abstract text available
    Text: NGTB30N65IHL2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB30N65IHL2WG NGTB30N65IHL2W/D

    45N60

    Abstract: No abstract text available
    Text: NGTB45N60SWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB45N60SWG NGTB45N60SW/D 45N60

    NGTB60N60SWG

    Abstract: No abstract text available
    Text: NGTB60N60SWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB60N60SWG NGTB60N60SW/D NGTB60N60SWG

    40n60

    Abstract: V8140 NGTB40N60IHLWG 40N60IHL
    Text: NGTB40N60IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB40N60IHLWG NGTB40N60IHLW/D 40n60 V8140 40N60IHL