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    30N120IHL

    Abstract: NGTB30N120IHLWG
    Text: 30N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		NGTB30N120IHLWG NGTB30N120IHL/D 30N120IHL PDF