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    20N120L

    Abstract: NGTB20N120LWG
    Text: 20N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		NGTB20N120LWG NGTB20N120L/D 20N120L PDF

    20N120L

    Abstract: NGTB20N120LWG 20n12 resonant inverter for welding
    Text: 20N120LWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		NGTB20N120LWG NGTB20N120L/D 20N120L 20n12 resonant inverter for welding PDF