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    20N12 Search Results

    20N12 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TRS20N120HB Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 1200 V, 20 A, 2 in 1, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    20N12 Price and Stock

    Infineon Technologies AG BSC120N12LSGATMA1

    TRENCH >=100V PG-TDSON-8
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    DigiKey BSC120N12LSGATMA1 Cut Tape 2,427 1
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    BSC120N12LSGATMA1 Digi-Reel 2,427 1
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    Avnet Americas BSC120N12LSGATMA1 Reel 16 Weeks 5,000
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    Rochester Electronics BSC120N12LSGATMA1 1,746 1
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    Chip One Stop BSC120N12LSGATMA1 Cut Tape 4,740 0 Weeks, 1 Days 1
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    onsemi NVH4L020N120SC1

    SICFET N-CH 1200V 102A TO247
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    DigiKey NVH4L020N120SC1 Tube 1,282 1
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    Newark NVH4L020N120SC1 Bulk 250 1
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    Richardson RFPD NVH4L020N120SC1 450
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    IBS Electronics NVH4L020N120SC1 1
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    New Advantage Corporation NVH4L020N120SC1 150 1
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    onsemi NTBG020N120SC1

    SICFET N-CH 1200V 8.6A/98A D2PAK
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    DigiKey NTBG020N120SC1 Cut Tape 1,223 1
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    NTBG020N120SC1 Digi-Reel 1,223 1
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    NTBG020N120SC1 Reel 800 800
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    Avnet Americas NTBG020N120SC1 Reel 5,600 17 Weeks 800
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    Mouser Electronics NTBG020N120SC1 942
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    Rochester Electronics NTBG020N120SC1 15 1
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    Richardson RFPD NTBG020N120SC1 800
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    Avnet Asia NTBG020N120SC1 32 17 Weeks 800
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    Avnet Silica NTBG020N120SC1 18 Weeks 800
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    EBV Elektronik NTBG020N120SC1 8,800 19 Weeks 800
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    IBS Electronics NTBG020N120SC1 800
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    New Advantage Corporation NTBG020N120SC1 24 1
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    Wuhan P&S NTBG020N120SC1 551 1
    • 1 $67.13
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    onsemi NVHL020N120SC1

    SICFET N-CH 1200V 103A TO247-3
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    DigiKey NVHL020N120SC1 Tube 922 1
    • 1 $34.73
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    Mouser Electronics NVHL020N120SC1 1,115
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    Newark NVHL020N120SC1 Bulk 25 1
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    Richardson RFPD NVHL020N120SC1 450
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    Avnet Silica NVHL020N120SC1 9 Weeks 30
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    Chip One Stop NVHL020N120SC1 Tube 5 0 Weeks, 1 Days 1
    • 1 $58.2
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    EBV Elektronik NVHL020N120SC1 10 Weeks 30
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    Vyrian NVHL020N120SC1 366
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    STMicroelectronics SCT20N120H

    SICFET N-CH 1200V 20A H2PAK-2
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    DigiKey SCT20N120H Cut Tape 785 1
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    SCT20N120H Digi-Reel 785 1
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    STMicroelectronics SCT20N120H 711 1
    • 1 $15.39
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    TME SCT20N120H 1
    • 1 $17.85
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    Avnet Silica SCT20N120H 2,000 17 Weeks 1,000
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    20N12 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    20N120E2 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    20N12 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IC IGBT 20N120

    Abstract: 20n120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1
    Text: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings


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    20N120 20N120 O-247 IXDH20N120D1 IC IGBT 20N120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1 PDF

    20n120

    Abstract: induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGP 20N120B IXGP 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Preliminary Data Sheet V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    20N120B 20N120BD1 IC110 O-220 6A/DSEC16-06A 20n120 induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes PDF

    IC IGBT 20N120

    Abstract: IXDH20N120AU1 ixdh20n120au 20N120
    Text: IXDA 20N120 AS VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA C Preliminary Data TO-263 AB G G E E Symbol Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 20 kW


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    20N120 O-263 IXDH20N120AU1 IC IGBT 20N120 IXDH20N120AU1 ixdh20n120au PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW20N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 20N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


    OCR Scan
    MGW20N 120/D 20N120 MGW20N120/D PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Data High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient


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    20N120B O-268 O-247 728B1 123B1 065B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


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    20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140 PDF

    IXGH20N120BD1

    Abstract: IXGH 20N120BD1
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


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    20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH20N120BD1 IXGH 20N120BD1 PDF

    20N120D1

    Abstract: IC IGBT 20N120 20n120 FII30-12E ISOPLUS247
    Text: IXER 20N120 IXER 20N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.4 V in ISOPLUS247 C ISOPLUS247™ C G G G  C E IXER 20N120 Isolated Backside E E IXER 20N120D1 G = Gate C = Collector E = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C


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    20N120 20N120D1 ISOPLUS247TM 20080118a 20N120D1 IC IGBT 20N120 20n120 FII30-12E ISOPLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information VCES IC25 VCE sat tfi(typ) IXGH 20N120 IXGT 20N120 IGBT High Voltage, Low VCE(sat) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM


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    20N120 20N120 O-268 O-247 O-268AA PDF

    MJ480

    Abstract: No abstract text available
    Text: IXDA 20N120AS High Voltage IGBT IC25 = 38 A = 1200 V VCES VCE sat typ = 2.4 V Short Circuit SOA Capability Square RBSOA TAB 1 h 3 TAB Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK


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    20N120AS 20110118a MJ480 PDF

    20N120

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 20N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 1200 V = 20 A RDS on = 0.75 Ω ≤ 300 ns trr D G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    20N120 728B1 123B1 728B1 065B1 20N120 PDF

    20N120BD1

    Abstract: ixys dsep 8-12a
    Text: High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 VCES IC25 VCE sat Designed for induction heating applications = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    20N120B 20N120BD1 IC110 O-220 728B1 123B1 065B1 20N120BD1 ixys dsep 8-12a PDF

    20N120

    Abstract: IC IGBT 20N120
    Text: IXDH 20N120 AU1 High Voltage IGBT with Diode C Short Circuit SOA Capability Square RBSOA VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V G E Preliminary Data Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ


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    20N120 O-247 IXDH20N120AU1 D-68623 IC IGBT 20N120 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings


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    20N120B IC110 O-268 O-247 728B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXDH 20N120 VCES = 1200 V IXDH 20N120 D1 IC25 = 38 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings


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    20N120 20N120 O-247 IXDH20N120D1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 20N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 1200 V = 20 A RDS on = 0.75 Ω ≤ 300 ns trr D G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C


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    20N120 OT-227 E153432 728B1 123B1 728B1 065B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFK 20N120 IXFX 20N120 HiPerFETTM Power MOSFETs VDSS ID25 = 1200 V = 20 A = 0.75 Ω RDS on trr ≤ 300 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous


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    20N120 247TM PDF

    Untitled

    Abstract: No abstract text available
    Text: IXDA 20N120AS IC25 = 38 A = 1200 V VCES VCE sat typ = 2.4 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA TAB 1 h 3 TAB Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK


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    20N120AS O-263 20110118a PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings


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    20N120B O-268 IC110 728B1 123B1 728B1 065B1 20N120B PDF

    Untitled

    Abstract: No abstract text available
    Text: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode C C Short Circuit SOA Capability Square RBSOA G G E E IXDH 20N120 Preliminary Data IXDH 20N120 D1 Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C


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    20N120 20N120 O-247 IXDH20N120D1 D-68623 PDF

    IC IGBT 20N120

    Abstract: 20N120
    Text: IGBT IXGA 20N120 VCES IXGP 20N120 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C


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    20N120 O-220AB O-263 728B1 IC IGBT 20N120 PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXYS High Voltage IGBT with optional Diode IXDH 20N120 IXDH 20N120 D1 V CES ^C25 vCE sat typ 1200 V 38 A 2.4 V Short Circuit SOA Capability Square RBSOA IXDH 20N120 Preliminary Data Symbol Conditions IXDH 20N120 D1 Maximum Ratings VCES Tj = 25°C to 150°C


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    20N120 20N120 PDF

    TO-247 weight

    Abstract: 20N120 20N120 IGBT
    Text: IGBT IXGH 20N120 VCES IXGT 20N120 IC25 VCE sat tfi(typ) = 1200 V = 40 A = 2.5 V = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM


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    20N120 O-247 O-268 O-268 728B1 TO-247 weight 20N120 IGBT PDF

    IXDH20N120D1

    Abstract: IXDH20N120 20N120 IC IGBT 20N120 ixys ixdh 20n120 20N120 IGBT 20N120D1 200-Millimeter
    Text: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings


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    20N120 20N120 O-247 IXDH20N120D1 IXDH20N120D1 IXDH20N120 IC IGBT 20N120 ixys ixdh 20n120 20N120 IGBT 20N120D1 200-Millimeter PDF