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    onsemi NGTB20N120IHLWG

    IGBT 1200V 40A 192W TO247-3
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    20N120IHL Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 20N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB20N120IHLWG NGTB20N120IHL/D

    20N120IHL

    Abstract: NGTB20N120IHLWG 20n12 20N120
    Text: 20N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB20N120IHLWG NGTB20N120IHL/D 20N120IHL 20n12 20N120

    20N120IHL

    Abstract: ngtb20n120
    Text: 20N120IHLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB20N120IHLWG NGTB20N120IHL/D 20N120IHL ngtb20n120