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    NGTB40N120FLWG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGTB40N120FLWG On Semiconductor NGTB40N120 - TRANSISTOR IGBT, Insulated Gate BIP Transistor Original PDF

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    40n120

    Abstract: 40N120FL NGTB40N120FLWG MC 140 transistor NGTB40N120
    Text: NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB40N120FLWG NGTB40N120FLW/D 40n120 40N120FL MC 140 transistor NGTB40N120

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB40N120FLWG NGTB40N120FLW/D

    Untitled

    Abstract: No abstract text available
    Text: NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is


    Original     		PDF NGTB40N120FLWG NGTB40N120FLW/D