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    TG12N60 Search Results

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    TG12N60 Price and Stock

    onsemi HGTG12N60B3

    IGBT 600V 27A 104W TO247
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    DigiKey HGTG12N60B3 Tube 300
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    onsemi HGTG12N60A4

    IGBT 600V 54A 167W TO247
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    Newark HGTG12N60A4 Bulk 300
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    Win Source Electronics HGTG12N60A4 125
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    Rochester Electronics LLC HGTG12N60DID

    24A, 600V, RUGGED, UFS SERIES N
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    DigiKey HGTG12N60DID Bulk 88
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    Rochester Electronics LLC HGTG12N60D1D

    UFS SERIES N-CHANNEL IGBT
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    DigiKey HGTG12N60D1D Bulk 44
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    Rochester Electronics LLC HGTG12N60C3D

    UFS SERIES N-CH IGBT
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    DigiKey HGTG12N60C3D Tube 64
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    TG12N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    12n60c

    Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB
    Text: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS TG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS CT ODU ODUCT


    Original
    G12N6 12N60 S12N6 HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS GTG12N 12n60c 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB PDF

    TG12N60C3D

    Abstract: g12n60c3d TG12N60 g12n G12N60
    Text: TG12N60C3D 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e J an ua ry 1997 Features Pa ckage • 24A, 600V at Tc = 25°C J E D E C S T Y L E T O -2 47 • Typical Fall T i m e . .


    OCR Scan
    HGTG12N60C3D 210ns HGTG12N60C3D TG12N60C3D g12n60c3d TG12N60 g12n G12N60 PDF

    12n60b3d

    Abstract: 12N60B3 Zener Diode LT 432 12N60 TA49188 HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TB334
    Text: TG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS in t e r r ii J a n u a ry . Data Sheet 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar


    OCR Scan
    12N60B3D, HGT1S12N60B3DS TA49171. TA49188. 12n60b3d 12N60B3 Zener Diode LT 432 12N60 TA49188 HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TB334 PDF

    MJ-112

    Abstract: T1S12 mosfet 600v 10a to-220ab
    Text: TG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS HARRIS S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description This family of MOS gated high voltage switching devices com bine the best features of MOSFETs and bipolar transis­


    OCR Scan
    HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS TA49171. TA49188. 1-800-4-HARRIS MJ-112 T1S12 mosfet 600v 10a to-220ab PDF

    Untitled

    Abstract: No abstract text available
    Text: TG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS uADQie rw o S E M I C rtru O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Description Features This fam ily of MOS gated high voltage switching devices


    OCR Scan
    HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS TA49171. TA49188. 1-800-4-HARRIS PDF

    12n60a4

    Abstract: IGBT 12n60a4 TP12N60A4 12n60a T1S12N60A4S 12N60 transistor BT 139 F applications note HGTG12N60A4
    Text: HGTP12N60A4, TG12N60A4, HG T1S12N60A4S Data Sheet May 1999 File Number 600V, SM PS S e rie s N -C h a n n e l IG B T F e a tu re s The HGTP12N60A4, TG12N60A4 and HGT1S12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan
    TP12N60A4, 12N60A4, T1S12N60A4S HGTP12N60A4, HGTG12N60A4 HGT1S12N60A4S TA49335. O-220AB 12n60a4 IGBT 12n60a4 TP12N60A4 12n60a 12N60 transistor BT 139 F applications note PDF

    g12n60c3d

    Abstract: Transistor No C110 C110 HGTG12N60C3D RHRP1560 TA49061 TA49123 G12N60C
    Text: TG12N60C3D in t e r r ii J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The TG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    OCR Scan
    HGTG12N60C3D HGTG12N60C3D TA49123. TA49061. TA49117. g12n60c3d Transistor No C110 C110 RHRP1560 TA49061 TA49123 G12N60C PDF

    IGBT 12n60a4D

    Abstract: No abstract text available
    Text: TG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Semiconductor F eb ru ary 1999 D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The TG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan
    HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS TA49335. TA49371. 1-800-4-HARRIS IGBT 12n60a4D PDF