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    G12N Search Results

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    G12N Price and Stock

    INPAQ Technology Co Ltd MCI0603TG12NHHBPDG

    FIXED IND 0603 12NH 250MA 0.75OH
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    DigiKey MCI0603TG12NHHBPDG Cut Tape 74,900 1
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    MCI0603TG12NHHBPDG Digi-Reel 74,900 1
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    MCI0603TG12NHHBPDG Reel 60,000 15,000
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    Johanson Technology Inc LRW0402WG12NGG001T

    FIXED IND 12NH 640MA 120MOHM SMD
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    DigiKey LRW0402WG12NGG001T Cut Tape 21,476 1
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    LRW0402WG12NGG001T Digi-Reel 21,476 1
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    LRW0402WG12NGG001T Reel 10,000 10,000
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    Murata Manufacturing Co Ltd LQP03TG12NH02D

    FIXED IND 12NH 180MA 1.78OHM SMD
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    DigiKey LQP03TG12NH02D Digi-Reel 10,375 1
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    LQP03TG12NH02D Cut Tape 10,375 1
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    Mouser Electronics LQP03TG12NH02D 16,762
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    TME LQP03TG12NH02D 15,000
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    Chip1Stop LQP03TG12NH02D Cut Tape 12,980
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    Amphenol PCD A85049602G12N

    CONN BACKSHELL ADPT SZ7 12 SILV
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    DigiKey A85049602G12N Bag 100 1
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    CDM Electronics A85049602G12N
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    Mechatronics Fan Group PFG-12N

    FAN GUARD LOUVERED RAL7032
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    DigiKey PFG-12N Bulk 31 1
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    Find more G12N price and stock on Findchips.com

    G12N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    12n60c

    Abstract: 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB
    Text: [ /Title HGT G12N6 0C3D R, HGTP 12N60 C3DR, HGT1 S12N6 0C3D RS /Subject (24A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (24A, 600V, Rugged, UFS G12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS CT ODU ODUCT


    Original     		G12N6 12N60 S12N6 HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DRS GTG12N 12n60c 12n60c3d 12N60 g12n60c3d S12n-6 12N60C3 HGTP12N60C3DR GTG12N 12n60 dc TO-247AB PDF

    g12n60c3d

    Abstract: HGTG12N60C3D LD26 RHRP1560 TA49061 TA49123
    Text: G12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    Original     		HGTG12N60C3D HGTG12N60C3D 150oC. TA49123. TA49061. 210ns 150oC g12n60c3d LD26 RHRP1560 TA49061 TA49123 PDF

    G12N60b3

    Abstract: g12n60 TA49171 HGT1S12N60B3S HGT1S12N60B3S9A HGTG12N60B3 HGTP12N60B3 HGTP12N60B3D LD26 110A
    Text: G12N60B3, HGTP12N60B3, HGT1S12N60B3S Data Sheet April 2002 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S 150oC. 112ns 150oC G12N60b3 g12n60 TA49171 HGT1S12N60B3S HGT1S12N60B3S9A HGTG12N60B3 HGTP12N60B3 HGTP12N60B3D LD26 110A PDF

    G12N60B3

    Abstract: HGTG12N60B3 HGTG12N60B3D LD26
    Text: G12N60B3 Data Sheet August 2003 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG12N60B3 150oC. 112ns 150oC G12N60B3 HGTG12N60B3 HGTG12N60B3D LD26 PDF

    HGTH12N40C1D

    Abstract: HGTH12N40E1D HGTH12N50C1D HGTH12N50E1D G12N40E1D
    Text: HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 12A, 400V and 500V JEDEC TO-218AC • VCE ON : 2.5V Max. EMITTER • TFALL: 1µs, 0.5µs COLLECTOR


    Original     		HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D O-218AC HGTH12N50E1D HGTH12N40C1D HGTH12N40E1D HGTH12N50C1D G12N40E1D PDF

    G12N60D1D

    Abstract: G12N60D1 HGTG12N60D1 AN7254 AN7260 HGTG12N60D1D
    Text: G12N60D1D S E M I C O N D U C T O R 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 12A, 600V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns • Low Conduction Loss


    Original     		HGTG12N60D1D O-247 500ns 150oC. G12N60D1D G12N60D1 HGTG12N60D1 AN7254 AN7260 HGTG12N60D1D PDF

    g12n60d1

    Abstract: AN7254 AN7260 HGTP12N60D1
    Text: HGTP12N60D1 S E M I C O N D U C T O R 12A, 600V N-Channel IGBT April 1995 Features Package • 12A, 600V JEDEC TO-220AB • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR FLANGE • Low Conduction Loss


    Original     		HGTP12N60D1 O-220AB 500ns 150oC. g12n60d1 AN7254 AN7260 HGTP12N60D1 PDF

    g10n50c1

    Abstract: G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1
    Text: HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE ON : 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs


    Original     		HGTP10N40C1, HGTH12N40C1, O-218AC O-220AB HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40E1, g10n50c1 G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1 PDF

    HGT1S12N60B3S

    Abstract: G12N60B3 HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 g12n60
    Text: HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S 150oC. G12N60B3 HGT1S12N60B3S9A HGTP12N60B3D LD26 TB334 g12n60 PDF

    Untitled

    Abstract: No abstract text available
    Text: G12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    Original     		HGTG12N60C3D HGTG12N60C3D 150oC. TA49123. TA49061. 210ns 150oC PDF

    HGTH12N40E1D

    Abstract: HGTH12N40C1D HGTH12N50C1D HGTH12N50E1D 50uh
    Text: HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D S E M I C O N D U C T O R 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 12A, 400V and 500V JEDEC TO-218AC • VCE ON : 2.5V Max. EMITTER • TFALL: 1µs, 0.5µs


    Original     		HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D O-218AC HGTH12N50E1D voltage260) HGTH12N40E1D HGTH12N40C1D HGTH12N50C1D 50uh PDF

    walkie talkie circuit diagram

    Abstract: Telemecanique XS1 walkie talkie circuit diagram using op amp XS2D12PA140D simple walkie talkie circuit diagram xs1-d08pa140 XSA-V11801 TF Telemecanique xsc TSX NANO CABLE XS8E1A1PAL01M12
    Text: Proximity Sensors x File 9006 CONTENTS Schneider Electric Brands Description Page Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 Auto-adaptable and Standard Flat Inductive Proximity Sensor . . . . . . . . . . . . . . . 206


    Original     		5-4-199X) LR46094 LR44087 E39291 E39281 walkie talkie circuit diagram Telemecanique XS1 walkie talkie circuit diagram using op amp XS2D12PA140D simple walkie talkie circuit diagram xs1-d08pa140 XSA-V11801 TF Telemecanique xsc TSX NANO CABLE XS8E1A1PAL01M12 PDF

    G12N60D1

    Abstract: G12N60D1D AN7254 AN7260 HGTG12N60D1D G12N60
    Text: G12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 12A, 600V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns • Low Conduction Loss GATE COLLECTOR BOTTOM SIDE


    Original     		HGTG12N60D1D O-247 500ns 150oC. G12N60D1 G12N60D1D AN7254 AN7260 HGTG12N60D1D G12N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: G12N60C3D S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 24A, 600V at TC = +25 C Typical Fall Time - 210ns at TJ = +150oC Short Circuit Rating Low Conduction Loss


    Original     		HGTG12N60C3D 210ns 150oC O-247 HGTG12N60C3D 150oC. TA49123 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTP12N60B3, HGT1S12N60B3S Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S 150oC. TA49171. PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    OZ8118

    Abstract: ps223 SD CARD CONTROLLER CMD26 intel g31 msi G993P1UF RTL811C BGA969 5KR04 apa2057a intel g41 msi
    Text: A B C D MS-1431 VER : 0.A E DC JACK & Selector Page 27 1 1 SYS POWER Penryn Page 3,4 HOST +3V +5V FSB 667/800/1066 TPS51120 Page 29 RGB CRT NORTH BRIDGE Page 15 LVDS LVDS 2 NB9M PCIE2.0 Page 15 HDMI HDMI INTEL Dual Channel DDRII 667/800 MHZ Page 31 2 DDR-SODIMM0


    Original     		MS-1431 TPS51120 TPS51124 RT9173BPS OZ8118 8111B/C H11----fuqun MS-1431 OZ8118 ps223 SD CARD CONTROLLER CMD26 intel g31 msi G993P1UF RTL811C BGA969 5KR04 apa2057a intel g41 msi PDF

    TG12N60C3D

    Abstract: g12n60c3d TG12N60 g12n G12N60
    Text: G12N60C3D 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e J an ua ry 1997 Features Pa ckage • 24A, 600V at Tc = 25°C J E D E C S T Y L E T O -2 47 • Typical Fall T i m e . .


    OCR Scan     		HGTG12N60C3D 210ns HGTG12N60C3D TG12N60C3D g12n60c3d TG12N60 g12n G12N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 TH IS DRAWING COPYRIGHT IS U N P U B L IS H E D . 2 3 RELEASED BY 1WCO ELECTRONICS CORPORATION. FOR PUBLIC ATIO N LOC D IS T R E V IS IO N S ALL INTERNATIONAL RIGHTS RESERVED. P LTR D E S C R IP TIO N A PR ODUCTION DATE RE LE ASE 03 S EP DWN APVD BJR MKS


    OCR Scan     		PDF

    G12N60b3

    Abstract: G12N60B HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ
    Text: in t e HGTP12N60B3, HGT1S12N60B3S r r ii J a n u a ry . m Data Sheet 27A, 600V, UFS Series N-Channel IGBTs The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    OCR Scan     		HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S TA49171ration G12N60b3 G12N60B HGT1S12N60B3S9A HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ PDF

    12N50E

    Abstract: 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40
    Text: r r I i- i a c a m e ; <Ü h g t p i 0N40C1, 40E1, s o c i , 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 o? 10A, 12A, 400V and 500V N-Channel IGBTs A p ril 1 9 9 5 Features Packages H G TH -TY P E S JE D E C TO -218A C • 10A and 12A, 400V and 500V • ^CE ON ’ 2.5V Max.


    OCR Scan     		0N40C1, HGTH12N40C1, -218A -220A HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, 12N50E 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40 PDF

    G12N60D1

    Abstract: 12n60d1 28-303 A 933 S transistors
    Text: HGTP12N60D1 cE W s 12A, 600V N-Channel IGBT April 1995 Features Package • 12A,600V JEDEC TO-220AB • Latch Free Operation EMfTTER CO LLECTO R • Typical Fall Time <500ns GATE • High Input Impedance CO LLECTO R FLA NG E • L o w C o n d u c tio n Loss


    OCR Scan     		HGTP12N60D1 O-220AB 500ns G12N60D1 12n60d1 28-303 A 933 S transistors PDF

    DIODE 3LU

    Abstract: DIODE 3LU 32 DIODE 3LU 35 3lu diode
    Text: HARFR IS HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, T c = 25°C The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the


    OCR Scan     		HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S HGT1S12N60B3 112ns 1-800-4-HARRIS DIODE 3LU DIODE 3LU 32 DIODE 3LU 35 3lu diode PDF

    g12n60c3d

    Abstract: Transistor No C110 C110 HGTG12N60C3D RHRP1560 TA49061 TA49123 G12N60C
    Text: G12N60C3D in t e r r ii J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    OCR Scan     		HGTG12N60C3D HGTG12N60C3D TA49123. TA49061. TA49117. g12n60c3d Transistor No C110 C110 RHRP1560 TA49061 TA49123 G12N60C PDF