TA49061 Search Results

Contextual Info: RHRG1540CC, RHRG1550CC, RHRG1560CC Semiconductor April 1995 File Number 3684.1 15A, 400V-600V Hyperfast Dual Diodes Features RHRG1540CC, RHRG1550CC and RHRG1560CC TA49061 are hyperfast dual diodes with soft recovery char­ acteristics (tRR < 35ns). They have half the recovery time of

Contextual Info: RHRP1540, RHRP1550, RHRP1560 Semiconductor April 1995 File Number 3685.1 15A, 400V - 600V Hyperfast Diodes Features RHRP1540, RHRP1550 and RHRP1560 TA49061 are hyperfast diodes with soft recovery characteristics (tp p < 35ns). They have half the recovery time of ultrafast diodes

g12n60c3d

Abstract: HGTG12N60C3D LD26 RHRP1560 TA49061 TA49123
Contextual Info: HGTG12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a

TG12N60C3D

Abstract: g12n60c3d TG12N60 g12n G12N60
Contextual Info: HGTG12N60C3D 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e J an ua ry 1997 Features Pa ckage • 24A, 600V at Tc = 25°C J E D E C S T Y L E T O -2 47 • Typical Fall T i m e . .

RHRG1550CC

Abstract: RHRG1540CC RHRG1560CC TA49061
Contextual Info: RHRG1540CC, RHRG1550CC, RHRG1560CC S E M I C O N D U C T O R 15A, 400V - 600V Hyperfast Dual Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . < 35ns JEDEC STYLE TO-247 o ANODE 2 CATHODE ANODE 1 • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

Contextual Info: RHRG1540CC, RHRG1560CC Data Sheet January 2002 15A, 400V - 600V Hyperfast Dual Diodes Features The RHRG1540CC and RHRG1560CC are hyperfast dual diodes with soft recovery characteristics trr < 35ns . They have half the recovery time of ultrafast diodes and are silicon

RHRP1560

Abstract: RHRP1540 TA49061
Contextual Info: RHRP1540, RHRP1560 Data Sheet January 2000 File Number 3685.2 15A, 400V - 600V Hyperfast Diodes Features The RHRP1540 and RHRP1560 are hyperfast diodes with soft recovery characteristics trr < 35ns . They have half the recovery time of ultrafast diodes and are silicon nitride

Contextual Info: HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a

RHRG1540CC

Abstract: RHRG1560CC TA49061
Contextual Info: RHRG1540CC, RHRG1560CC Data Sheet January 2000 File Number 3684.2 15A, 400V - 600V Hyperfast Dual Diodes Features The RHRG1540CC and RHRG1560CC are hyperfast dual diodes with soft recovery characteristics trr < 35ns . They have half the recovery time of ultrafast diodes and are silicon

RHRG1540CC

Abstract: RHRG1560CC TA49061 TB-205
Contextual Info: RHRG1540CC, RHRG1560CC Data Sheet Title HR 540 , HRG 60C bt A, 0V0V pert al odes utho eyrds terrpoon, minctor, pert al odes vache ergy ted, itch January 2000 File Number 3684.2 15A, 400V - 600V Hyperfast Dual Diodes Features The RHRG1540CC and RHRG1560CC are hyperfast dual

600V 25A Ultrafast Diode

Abstract: RHRP1540 RHRP1560 TA49061
Contextual Info: RHRP1540, RHRP1560 interrii J a n u a ry . Data Sheet w in File Num ber 3685.2 15A, 400V - 600V Hyperfast Diodes Features The RHRP1540 and RHRP1560 are hyperfast diodes with soft recovery characteristics trr < 35ns . They have half the recovery time of ultrafast diodes and are silicon nitride

RHRG1560C

Abstract: RHRG1540CC RHRG1560CC TA49061
Contextual Info: in terrii RHRG1540CC, RHRG1560CC J a n u a ry . w in Data Sheet File Num ber 3684.2 15A, 400V - 600V Hyperfast Dual Diodes Features The RHRG1540CC and RHRG1560CC are hyperfast dual diodes with soft recovery characteristics trr < 35ns . They have half the recovery time of ultrafast diodes and are silicon

Contextual Info: HGTG12N60C3D S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 24A, 600V at TC = +25 C Typical Fall Time - 210ns at TJ = +150oC Short Circuit Rating Low Conduction Loss

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

g12n60c3d

Abstract: Transistor No C110 C110 HGTG12N60C3D RHRP1560 TA49061 TA49123 G12N60C
Contextual Info: HGTG12N60C3D in t e r r ii J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a

G12N60C3D

Abstract: TA49123 G12N60 G12N60C G12N60C3 HGTG12N60C3D RHRP1560 TA49061
Contextual Info: HGTG12N60C3D Data Sheet January 2000 File Number 4043.2 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a

RHRP1550

Abstract: RHRP1560 RHRP1540 TA49061
Contextual Info: RHRP1540, RHRP1550, RHRP1560 S E M I C O N D U C T O R 15A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <35ns JEDEC TO-220AC o ANODE CATHODE • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

G12N60C3D

Abstract: TA49123 igbt 100a 150v LD26 RHRP1560 TA49061 HGTG12N60C3D g12n60c3 G12N60
Contextual Info: HGTG12N60C3D S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features • • • • • Package o 24A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC Short Circuit Rating

RHRP1560

Abstract: RHRP1540 TA49061
Contextual Info: RHRP1540, RHRP1560 Data Sheet Title HRP 40, HRP 50, HRP 60 bt A, 0V 0V pert odes January 2000 File Number 3685.2 15A, 400V - 600V Hyperfast Diodes Features The RHRP1540 and RHRP1560 are hyperfast diodes with soft recovery characteristics trr < 35ns). They have half the

g12n60c3d

Abstract: hyperfast diode reference guide HGTG12N60C3D LD26 RHRP1560 TA49061 TA49123 g12n60c3
Contextual Info: HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a

Contextual Info: m HARRIS RHRG1540CC, RHRG1550CC, uü •»••.«t., RHRG1560CC April 1995 15A, 400V - 600V Hyperfast Dual Diodes Features Package • Hyperfast with Soft Recovery < 35ns • Operating Tem p eratu re. + 175°C • Reverse Voltage Up T o .

RHRP1560

Abstract: TA49061 RHRP1540 RHRP
Contextual Info: RHRP1540, RHRP1560 Data Sheet January 2002 15A, 400V - 600V Hyperfast Diodes Features The RHRP1540 and RHRP1560 are hyperfast diodes with soft recovery characteristics trr < 35ns . They have half the recovery time of ultrafast diodes and are silicon nitride