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    T1S12 Price and Stock

    STMicroelectronics ST1S12G18R

    IC REG BUCK 1.8V 700MA TSOT23-5
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    DigiKey ST1S12G18R Digi-Reel 13,708 1
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    ST1S12G18R Cut Tape 13,708 1
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    ST1S12G18R Reel 9,000 3,000
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    Mouser Electronics ST1S12G18R 940
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    Newark ST1S12G18R Cut Tape 1
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    ST1S12G18R Reel 3,000
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    STMicroelectronics ST1S12G18R 940 1
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    Avnet Silica ST1S12G18R 6,000 17 Weeks 3,000
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    Win Source Electronics ST1S12G18R 31,030
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    STMicroelectronics ST1S12G12R

    IC REG BUCK 1.2V 700MA TSOT23-5
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    DigiKey ST1S12G12R Digi-Reel 6,567 1
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    ST1S12G12R Cut Tape 6,567 1
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    ST1S12G12R Reel 3,000 3,000
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    Avnet Americas ST1S12G12R Reel 18 Weeks 3,000
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    Mouser Electronics ST1S12G12R 5,456
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    Newark ST1S12G12R Cut Tape 280 1
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    STMicroelectronics ST1S12G12R 5,456 1
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    ComSIT USA ST1S12G12R 1,050
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    Avnet Silica ST1S12G12R 3,000 17 Weeks 3,000
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    STMicroelectronics ST1S12GR

    IC REG BUCK ADJ 700MA TSOT23-5
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    DigiKey ST1S12GR Cut Tape 5,909 1
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    ST1S12GR Digi-Reel 5,909 1
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    ST1S12GR Reel 3,000 3,000
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    Avnet Americas ST1S12GR Reel 3,000 18 Weeks 3,000
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    Mouser Electronics ST1S12GR 439
    • 1 $0.9
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    Newark ST1S12GR Cut Tape 2,290 5
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    ST1S12GR Reel 3,000
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    ST1S12GR Reel 3,000
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    STMicroelectronics ST1S12GR 439 1
    • 1 $0.88
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    TME ST1S12GR 1
    • 1 $0.93
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    NexGen Digital ST1S12GR 66,000
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    Chip 1 Exchange ST1S12GR 1,377
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    Avnet Silica ST1S12GR 3,000 17 Weeks 3,000
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    EBV Elektronik ST1S12GR 6,000 19 Weeks 3,000
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    Vyrian ST1S12GR 60,906
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    Win Source Electronics ST1S12GR 116,226
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    Rochester Electronics LLC HGT1S12N60C3D

    IGBT 600V 24A TO-262
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    DigiKey HGT1S12N60C3D Bulk 2,637 226
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    Rochester Electronics LLC HGT1S12N60A4DS

    IGBT 600V 54A TO-263AB
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    DigiKey HGT1S12N60A4DS Bulk 2,395 81
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    Find more T1S12 price and stock on Findchips.com

    T1S12 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    p12n60c3

    Abstract: p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C
    Text: HARRIS HGTP12N60C3, T1S12N60C3, T1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Chan nel IG BTs Jan ua ry 1997 F ea tu res Description • 24A, 600V at Tc = 25 °C The HGTP12N60C3, H G T1S12N60C3 and HG T1S12N60C3S are MOS gated high voltage switching devices combining the


    OCR Scan     		HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S T1S12N60C3 T1S12N60C3S p12n60c3 p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C PDF

    12n60a4

    Abstract: IGBT 12n60a4 TP12N60A4 12n60a T1S12N60A4S 12N60 transistor BT 139 F applications note HGTG12N60A4
    Text: HGTP12N60A4, HGTG12N60A4, HG T1S12N60A4S Data Sheet May 1999 File Number 600V, SM PS S e rie s N -C h a n n e l IG B T F e a tu re s The HGTP12N60A4, HGTG12N60A4 and T1S12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan     		TP12N60A4, 12N60A4, T1S12N60A4S HGTP12N60A4, HGTG12N60A4 HGT1S12N60A4S TA49335. O-220AB 12n60a4 IGBT 12n60a4 TP12N60A4 12n60a 12N60 transistor BT 139 F applications note PDF

    12n60a4

    Abstract: IGBT 12n60a4 12n60a TA49335 hgtg12n60a4 SS LSE 0530 T1S12N60A4S
    Text: HGTP12N60A4, HGTG12N60A4, HG T1S12N60A4S D ata S h eet M ay 1999 F ile N u m b er 600V, SMPS Series N-Channel IGBT Features The HGTP12N60A4, HGTG12N60A4 and T1S12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan     		HGTP12N60A4, HGTG12N60A4, T1S12N60A4S HGTG12N60A4 HGT1S12N60A4S TA49335. O-220AB 12n60a4 IGBT 12n60a4 12n60a TA49335 SS LSE 0530 T1S12N60A4S PDF

    Untitled

    Abstract: No abstract text available
    Text: UNLESS CntERWSE NOTED A|” - ^ IMKImccartin TCLERAN&S ARE: 0MEN90NS ARE N MOTES ONE PLACE DECIMALS RELEASE FOR PRODUCTION TWO PLACE DECIMALS ±.1 ±.01 THREE PLACE DECIMALS ANGLES FOUR PLACE DECIMALS ±2” ± .005 ± .0020 .'100 IDC MOLD TO POSITION MALE


    OCR Scan     		0MEN90NS PDF

    12n60b3d

    Abstract: 12N60B3 Zener Diode LT 432 12N60 TA49188 HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TB334
    Text: HGTG12N60B3D, HGTP12N60B3D, T1S12N60B3DS in t e r r ii J a n u a ry . Data Sheet 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar


    OCR Scan     		12N60B3D, HGT1S12N60B3DS TA49171. TA49188. 12n60b3d 12N60B3 Zener Diode LT 432 12N60 TA49188 HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TB334 PDF

    G12N60b3

    Abstract: G12N60B HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ
    Text: in t e HGTP12N60B3, T1S12N60B3S r r ii J a n u a ry . m Data Sheet 27A, 600V, UFS Series N-Channel IGBTs The HGTP12N60B3 and T1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    OCR Scan     		HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S TA49171ration G12N60b3 G12N60B HGT1S12N60B3S9A HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ PDF

    2n60c3

    Abstract: 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent
    Text: l j A D D HGTP12N60C3D, h g t i s i 2N60C3D, T1S12N60C3DS I S 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with An ti -Parai I el H y p erfa st Di o d es January 1997 Features Description • 24A, 600V at Tc = 25 °C This family of MOS gated high voltage switching devices


    OCR Scan     		HGTP12N60C3D, 2N60C3D, HGT1S12N60C3DS TA49123. TA49188. 2n60c3 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: REVISION F TITLE: UNLESS OTHERWISE NOTED DIMENSIONS ARE IN INCHES ONE PLACE DECIMALS TWO PLACE DECIMALS ±.1 ±.01 .1 0 0 TOLERANCES ARE: THREE PLACE DECIMALS FOUR PLACE DECIMALS ANGLES ± .005 ± .0020 ± 2 ” TO n r ID C M O LD P O S IT IO N M ALE SUB-ASSEM BLY


    OCR Scan     		T-1S12-XX-S T-1S12-XX-T) PDF

    p12n60c3

    Abstract: p12n60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 S12N60C3 TA49123
    Text: i n t e HGTP12N60C3, T1S12N60C3S r r i i J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and T1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    OCR Scan     		HGTP12N60C3 HGT1S12N60C3S TA49123. HGTP12N60rporation p12n60c3 p12n60 HGT1S12N60C3S9A LD26 S12N60C3 TA49123 PDF

    MJ-112

    Abstract: T1S12 mosfet 600v 10a to-220ab
    Text: HGTG12N60B3D, HGTP12N60B3D, T1S12N60B3D, T1S12N60B3DS HARRIS S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description This family of MOS gated high voltage switching devices com bine the best features of MOSFETs and bipolar transis­


    OCR Scan     		HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS TA49171. TA49188. 1-800-4-HARRIS MJ-112 T1S12 mosfet 600v 10a to-220ab PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTG12N60B3D, HGTP12N60B3D, T1S12N60B3D, T1S12N60B3DS uADQie rw o S E M I C rtru O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Description Features This fam ily of MOS gated high voltage switching devices


    OCR Scan     		HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS TA49171. TA49188. 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: REVISION E TITLE: UNLESS OTHERWISE NOTED DIMENSIONS ARE IN INCHES ONE PLACE DECIMALS TWO PLACE DECIMALS ±.1 ±.01 THREE PLACE DECIMALS FOUR PLACE DECIMALS | IK e ± .005 ± .0020 TO ANGLE5 r n ID C DWG NO: M O LD P O S IT IO N HCMD- X X - X X - X M ALE SUB-ASSEM BLY


    OCR Scan     		T-1S12-XX-S) T-1S12-XX-T) PDF

    DIODE 3LU

    Abstract: DIODE 3LU 32 DIODE 3LU 35 3lu diode
    Text: HARFR IS HGTP12N60B3, T1S12N60B3, T1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, T c = 25°C The HGTP12N60B3, T1S12N60B3 and T1S12N60B3S are MOS gated high voltage switching devices combining the


    OCR Scan     		HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S HGT1S12N60B3 112ns 1-800-4-HARRIS DIODE 3LU DIODE 3LU 32 DIODE 3LU 35 3lu diode PDF

    G12N60B3

    Abstract: TO-262AA Package equivalent
    Text: HARRIS HGTP12N60B3, T1S12N60B3, T1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, T c = 2 5 °C The HGTP12N60B3, T1S12N60B3 and T1S12N60B3S are MOS gated high voltage switching devices combining the


    OCR Scan     		HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S HGT1S12N60B3 HGT1S12N60B3S 1-800-4-HARRIS G12N60B3 TO-262AA Package equivalent PDF

    p12n60c3

    Abstract: S12N60C3
    Text: HARRIS HGTP12N60C3, T1S12N60C3, T1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBTs January 1 9 9 7 Features Description • 24A, 600V at T c = 25°C The HGTP12N60C3, T1S12N60C3 and T1S12N60C3S are MOS gated high voltage switching devices combining the


    OCR Scan     		HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S HGT1S12N60C3 230ns p12n60c3 S12N60C3 PDF