CS19-12H01
Abstract: CS8-12I02 CS45-16I01 TO-208AA CS23-08I02 T0-208AA CS19-12 T0208AA CS23 T0220AB
Text: ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TMpMCTOpbl $MpMbl IXYS np0M3B0flMTenb : IXYS f lM a n a 3 0 H p a 6 o H M X T e M n e p a iy p : o t - 4 0 ° a o K o fl: Tok CS8-12I02 CS19-12H01 CS23-08I02 CS45-16I01 [A] 25,0 29,0 50,0 75,0 HanpflweHMe
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flMana30H
ot-40Â
CS8-12I02
CS19-12H01
T0220AB
CS23-08I02
T0208AA
CS45-16I01
T0247AD
I0247AD
TO-208AA
T0-208AA
CS19-12
T0208AA
CS23
T0220AB
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BYV255V200
Abstract: BYV255V-200 BYV54V200 DSEI2X61-12B BYV54V-200 DSEI2X121-02A 2X10 BYV42-200 BYV52PI200 DSEI2X31-06C
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics jen\ 495 739-09-95, 644-41-29 f lB O M H b ie B b in p A M M T e n b H b ie flM O A b i Kofl: [A] Hanp. [B] BYV255V200 BYV54V200 2x100 2x50 200 200 H eT K a T O fl ISOTOP v J P DSEI2X121-02A DSEI2X31-06C DSEI2X101-06A
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BYV255V200
2x100
BYV54V200
DSEI2X121-02A
DSEI2X31-06C
DSEI2X101-06A
DSEI2X31-12B
DSEI2X61-12B
MBR2545CT
BYV133/45-PHI
BYV255V-200
BYV54V-200
2X10
BYV42-200
BYV52PI200
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SOT227B
Abstract: DSEI2X121-02A DSEI12-06A DSEI2X61-12b DSEI2*61-12 DSEI2X31-12B DSEI2*61 ixys dsei2x31-06c DSEP2X61-12A DSEP12-12A
Text: klH TEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten\ 495 739-09-95, 644-41-29 electronics flMOAbi FRED (Fast Recovery Epitaxial Diodes) $upMbi IXYS np0M3B0flMTenb f lM a n a 3 0 H p a ö o H M X T e M n e p a T y p Kofl: : IXYS : o t - 40oC f l o + 150oC V f npw [B]
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OCR Scan
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flnana30H
ot-40Â
DSEI12-06A
T0220AC
DSEP12-12A
DSEP30-03A
T0247AD
DSEI60-06A
SOT227B
DSEI2X121-02A
DSEI2X61-12b
DSEI2*61-12
DSEI2X31-12B
DSEI2*61
ixys dsei2x31-06c
DSEP2X61-12A
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LS T73
Abstract: BFC42
Text: nil IF t i mi BFC42 SEME LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 5 31 (0 209) 1 4» (0 0S8) rD i t 3S5 (0 140) 3 81 {Q 150) VDSS 1 (0 040) ^ Terminal 1 Terminal 3 I
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OCR Scan
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BFC42
T0247-AD
300est
380jiS
MIL-STD-750
A1331A7
LS T73
BFC42
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BFC47
Abstract: No abstract text available
Text: Illl iF ti mi BFC47 SEME LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS S 31 (0 2 0 9 ) 1 4P 10 0S 9) 'DSS 0*0(001<| I D(cont) 1 01 (0 0 4 0 ) R DS(on) " 1 0 5 (0 4 3 0 f
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OCR Scan
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BFC47
T0247-AD
MIL-STD-750
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T0247AC
Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m
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OCR Scan
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B03M0WH0CTb
npe06pa30Baiennx
paUP212
T0220AB
BUP213
BUP313
T0218AB
BUP313D
T0247AC
IRG4PC50FD
T0-220AB
bup314
T0-247AC
bup314d
IRG4BC40U
T0220AB
IRG4PC50UD
BUP212
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IGBT 200A 1200V
Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D
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OCR Scan
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bup203
t0220)
BUP212
BUP213
BUP313
BUP313D
BUP314
BUP314D
GT20D101-T0s
GT20D201-T0s
IGBT 200A 1200V
T0247
T0220AB
BUP313D
IGBT IRG4BC20KD
igbt 20A 1200v
IGBT 1200V 60A
T0247A
BUP314D
MG50Q2YS40
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KL SN 102 94v-0
Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results
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BFC43
Abstract: No abstract text available
Text: mi iP É i llll BFC43 SEME LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) !DS(on) Terminal 1 Terminal 3 Gate Source Terminal 2 ABSOLUTE MAXIMUM RATINGS V DSS
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OCR Scan
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BFC43
T0247-AD
MIL-STD-750
BFC43
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BYS21-45
Abstract: BYS26-45 BYS21-90 BYS26 BYS21 BYS22-45 1N5817 1N5818 MBR2 1N5822
Text: klH TEPTEKC ww w.i-t.ru ¡nfo@ i-t.ru t B b i n p A M M T e n b H b ie A M O A b i Kofl: electronics en\ 095 739-09-95 c 6apbepoM 1N5817 1N5818 1N5819 BYS21-45 SB160 BYS21-90 BYS22-45 VRmax [B] 20 30 40 45 60 90 90 iFmax [A] 1,0 1,0 1,0 1,0 1,0 1,0 2,0 V f npw
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1N5817
1N5818
1N5819
BYS21-45
SB160
BYS21-90
BYS22-45
1N5822
BYS26-45
SB360
BYS26
BYS21
MBR2
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ixfh26n60q
Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY
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OCR Scan
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SI4466DY
SI4966DY
SI9925DY
SI9942DY
2SK1388
T0220AB
IRF7319
IRF7413
IRF7455
IRL2203N
ixfh26n60q
2SK2333
2SK2761
IRF1405
BUZ345
BSS89
irfp250n
P9NB60
irfp260n
2sk2671
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PDF
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Untitled
Abstract: No abstract text available
Text: D 1 X Y S Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack v CES ^C25 vv CE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N 60AU 1S) Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600
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OCR Scan
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IXGX50N60AU1
IXGX50N60AU1S
O-247
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PDF
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1ALF
Abstract: No abstract text available
Text: HER161PT TSC S thru HER167PT 16.0 AMPS. GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE 50 tc 800 V olts CURRENT 16.0 A-poros T0-3P/T0-247AD FEATURES * Dual rectifier construction, positive center-tap * Plastic package has Underwriters Laboratory
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OCR Scan
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HER161PT
HER167PT
T0-3P/T0-247AD
O-3P/TO-247AD
MIL-STD750.
600-SOOV
50mVp-pi
fl35S4b
1ALF
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PDF
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D0213AA
Abstract: D0204AL G3-64 DO-218AA D0-213AA DO-213AB MELF ITO-22QAB SMA DO-214AB MPG06 T0226AA
Text: C£ L >G e n e r a l v S e m ic o n d u c t o r PRODUCTPACKAGES . * % TO-22QAC TQ-220AB IT0-22QAC ITO-22QAB 10-263 D;i PAK .x« isUiilJS KBPM GBPC - W . GBPC T0-247AD GB1 wmm$& ^ % DFS % DO-218AA x ASC 00 DO-215AA (SMBG) 00-21 SAB (SMCG) •SPSSiM •
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OCR Scan
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ITO-22QAB
O-22QAC
TQ-220AB
IT0-22QAC
T0-247AD
DO-218AA
DO-215AA
DO-214AA
DO-214AB
DO-214AC
D0213AA
D0204AL
G3-64
DO-218AA
D0-213AA
DO-213AB MELF
ITO-22QAB
SMA DO-214AB
MPG06
T0226AA
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Untitled
Abstract: No abstract text available
Text: lili mi SEME BFC48 LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS ' 5 31 (0 209) 1 4» IP 0S9) 'DSS 0 40 (0 0161 0 70 (0 031) I D(cont) 1 01 (0 0 4 0 ) ^ R DS(on) I 10 5 |0 430)J
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OCR Scan
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BFC48
T0247-AD
MIL-STD-750
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PDF
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Untitled
Abstract: No abstract text available
Text: lili e FFe iiii SEME BFC51 LAB 4TH GENERATION MOSFET T0247-AD Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 5 31 (0 20» ) t * 9 (0 0 5 8 ) - fs|_ 3 J 5 (0 14 0) 3 11 (0 ISO) 'DSS 0 4 0 (0 016) I D(cont)
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OCR Scan
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BFC51
T0247-AD
380fj
MIL-STD-750
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PDF
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sot23 BS170
Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120
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OCR Scan
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BS107
BSS123
BS170
BSS138
BS108
BSN304
BSS89
IRFD310
IRFD420
IRFD210
sot23 BS170
2SK2671
P3NB60
IXFN27N80
IRFL014N
STP22NE10L
irf6348
IRF7305
rfp40n
IXTN21N100
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PDF
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Untitled
Abstract: No abstract text available
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C u n o B b ie T p a H 3 M C T o p b i IG B T IX Y S C #epa npMMeHeHMa: b n po M biw ne rn-ib ix ycTaHOBKax M a n o fi m cpeflHeM m o w ,h o c tm , b npMBOAHbix CMCTeMax, b yd p o M C T B a x ynpaB ^eH M a, b 6 ecn p0B 0A H bix 6 no K ax riMTaHMA Arm
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OCR Scan
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3S88SSS588S8888gÂ
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EGP300
Abstract: FEPI6GT ug2d equivalent FEP16FT equivalent fepi6 FEP30FP DO-214M FEP6DT equivalent FES16CT FES16DT
Text: FA S T E F F IC IE N T R E C T IF IE R S 10 A CASE TYPE 0.50 0.60 D0-Z13AA MINI'MELF UG06 1.0 00- 204AL DO-i?04AP 00-2 04AL «► I D0-204AP | I1 II % I V rrm (VOLTS) 50 fcGLMA UG06A# F6P1GA UF4001# FE1A UG1A# GI1001 100 COI M B UG06B# ESP18B UF4002# FE1B
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OCR Scan
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D0-Z13AA
204AL
D0-204AP
UF4005#
UF4006#
UF4007#
BYV26D
BYV26E
EGL34C
EGL34D
EGP300
FEPI6GT
ug2d equivalent
FEP16FT equivalent
fepi6
FEP30FP
DO-214M
FEP6DT equivalent
FES16CT
FES16DT
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PDF
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AH DO214
Abstract: SMC C96
Text: v G eneral Se m i c o n d u c t o r PACKAG ING < Y >/.>/: V STANDARD ANTI-STATIC PACKAGE PACKAGE CODE CODES PACKAGING DESCRIPTION 1 2 2B 2D 2E 2F 2J 2L 2M 3 4 4A 4B 4C 4D 5 5C 6 7 8 9 51 52 2C 26 2K 53 54 4E 4F 4G 4H 55 5A 5B 43 44 56 57 58 59 9A 9C 60 61
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OCR Scan
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DO-214/215AA
DQ-218AA
DO-218AA
DO-214/215AC
DO-214BA
O-269AA
O-263AB
DO-218
AH DO214
SMC C96
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PDF
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Untitled
Abstract: No abstract text available
Text: MBR4035PT AND MBR4045PT SCHOTTKY RECTIFIER VOLTA GE RANGE - 35 and 45 Volts CURRENT - 4 0 . 0 Amperes FEATURES T0-247AD 1— » .078 REF Cl.M — r . .203 5.16) .193(4.90) .313(7.95 •085 (2J6) .142(3.6) .07Ç(1.901 . £ IV .170 (4.3) _i- 10' TYP. V B0I H SIDES
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OCR Scan
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MBR4035PT
MBR4045PT
T0-247AD
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PDF
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Untitled
Abstract: No abstract text available
Text: A d v a n ced P o w er Te c h n o l o g y O D Ô S APT8075BNR APT8090BNR 800V 800V POWER MOS IVe 13.0A 0.7512 12.0A 0.90U UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V Parameter 'd C ontinuous Drain C urrent @ Tc - 25°C
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OCR Scan
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APT8075BNR
APT8090BNR
APT8075BNR
APT8090BNR
MIL-STD-750
T0-247AD
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