Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SPD10N10 Search Results

    SF Impression Pixel

    SPD10N10 Price and Stock

    Infineon Technologies AG SPD10N10

    SIPMOS POWER TRANSISTOR Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SPD10N10 1,870
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    SPD10N10 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPD10N10 Infineon Technologies Power MOSFET, 100V, DPAK, RDSon=0.2 ?, 10A, NL Original PDF
    SPD10N10 Siemens Original PDF
    SPD10N10 Siemens SIPMOS Power Transistor Original PDF
    SPD10N10 Toshiba Power MOSFETs Cross Reference Guide Original PDF

    SPD10N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SPU10N10

    Abstract: P-TO252 SPD10N10
    Text: SPD10N10 Preliminary data SPU10N10 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD10N10 100 V 10 A 0.2 Ω P-TO252 C67078-S. . . - . . SPU10N10 100 V 10 A


    Original     		PDF SPD10N10 SPU10N10 P-TO252 C67078-S. P-TO251 23/Jan/1998 SPU10N10 P-TO252 SPD10N10

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    10N10

    Abstract: P-TO252 SPD10N10 SPU10N10
    Text: SPD 10N10 Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.2 Ω Continuous drain current ID 10 A Enhancement mode • Avalanche rated • dv/dt rated


    Original     		PDF 10N10 SPD10N10 P-TO252 Q67040-S4119 SPU10N10 P-TO251 Q67040-S4111-A2 10N10 P-TO252 SPD10N10 SPU10N10

    10n10

    Abstract: P-TO252 SPD10N10 SPU10N10 658G
    Text: Preliminary Data SPD 10N10 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.2 Ω Continuous drain current ID 10 A Enhancement mode • Avalanche rated • dv/dt rated


    Original     		PDF 10N10 SPD10N10 P-TO252 Q67040-S4119-A2 SPU10N10 P-TO251 Q67040-S4111-A2 10n10 P-TO252 SPD10N10 SPU10N10 658G

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    10n10

    Abstract: No abstract text available
    Text: Preliminary Data SPD 10N10 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.2 Ω Continuous drain current ID 10 A Enhancement mode • Avalanche rated • dv/dt rated


    Original     		PDF 10N10 SPD10N10 SPU10N10 PG-TO252 PG-TO251 Q67040-S4119-A2 Q67040-S4111-A2 10n10

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPD10N10 Preliminary data SPU10N10 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 Pin 3 D S Type VDS b RDS on Package Ordering Code SPD10N10 100 V 10 A 0.2 Q P-T0252 C67078-S. SPU10N10 100 V 10 A 0.2 Q


    OCR Scan     		PDF SPD10N10 SPU10N10 P-T0252 P-T0251 C67078-S. 23/Jan/1998

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		PDF 615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S

    XC+872

    Abstract: No abstract text available
    Text: SPD 10N10 Inf i ne on technologies Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS 100 V • Enhancement mode Drain-Source on-state resistance ñ DS on1 0.2 Q. • Avalanche rated Continuous drain current


    OCR Scan     		PDF 10N10 11-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T XC+872